公开(公告)号：US20220199525A1

公开(公告)日：2022-06-23

申请号：US17126921

申请日：2020-12-18

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Anthony K. STAMPER ,  John J. ELLIS-MONAGHAN ,  Steven M. SHANK ,  John J. PEKARIK ,  Vibhor JAIN

IPC: H01L23/525 ,  H01L27/12 ,  H01L23/532

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a metal-free fuse structure and methods of manufacture. The structure includes: a first metal-free fuse structure comprising a top semiconductor material of semiconductor-on-insulator (SOI) technologies, the top semiconductor material including end portions with a first electrical resistance and a fuse portion of a second, higher electrical resistance electrically connected to the end portions; and a second metal-free fuse structure comprising the top semiconductor material of semiconductor-on-insulator (SOI) technologies, the top semiconductor material of the second metal-free fuse structure including at least a fuse portion of a lower electrical resistance than the second, higher electrical resistance.

公开(公告)号：US20210202717A1

公开(公告)日：2021-07-01

申请号：US16730371

申请日：2019-12-30

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Vibhor JAIN ,  Steven M. SHANK ,  John J. PEKARIK ,  Anthony K. STAMPER

IPC: H01L29/66 ,  H01L21/762 ,  H01L21/02 ,  H01L29/10 ,  H01L29/15 ,  H01L29/16 ,  H01L29/267

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to transistors with an oxygen lattice structure and methods of manufacture. The structure includes: a sub-collector region in a substrate; a collector region above the substrate; at least one oxygen film separating the sub-collector region and the collector region; an emitter region adjacent to the collector region; and a base region adjacent to the emitter region.

公开(公告)号：US20210159336A1

公开(公告)日：2021-05-27

申请号：US16691691

申请日：2019-11-22

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Anthony K. STAMPER ,  Aaron L. VALLETT ,  Steven M. SHANK ,  John J. ELLIS-MONAGHAN

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/08 ,  H01L29/45 ,  H01L29/417 ,  H01L29/66

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to vertical field effect transistors (FETS) and methods of manufacture. The structure includes: a substrate material; at least one vertically oriented gate structure extending into the substrate material and composed of a gate dielectric material and conductive gate material; and vertically oriented source/drain regions extending into the substrate material and composed of conductive dopant material and a silicide on the source/drain regions.