Analog content addressable memory for storing and searching arbitrary segments of ranges

    公开(公告)号:US11551771B2

    公开(公告)日:2023-01-10

    申请号:US17326223

    申请日:2021-05-20

    Abstract: Systems, devices, circuits, methods, and non-transitory computer readable media that enable storing and searching arbitrary segments of ranges of analog values are disclosed. Various analog content addressable memory (aCAM) circuit implementations having the capability to store and search outside of a range of values, within any of multiple disjoint ranges, or outside of multiple ranges are disclosed. The disclosed aCAM circuit implementations make searching for complex input features more flexible and efficient, thereby yielding a technological improvement over conventional solutions. In some implementations, an aCAM may include multiple pull-down transistors connected in series to a match line that is pre-charged, in which case, the aCAM detects a match if the match line is not discharged by the pull-down transistors, which occurs if at least one pull-down transistor is in an OFF state. In other implementations, an aCAM includes pass gates connected to a match line to detect a match.

    ANALOG CONTENT ADDRESSABLE MEMORY FOR STORING AND SEARCHING ARBITRARY SEGMENTS OF RANGES

    公开(公告)号:US20220375536A1

    公开(公告)日:2022-11-24

    申请号:US17326223

    申请日:2021-05-20

    Abstract: Systems, devices, circuits, methods, and non-transitory computer readable media that enable storing and searching arbitrary segments of ranges of analog values are disclosed. Various analog content addressable memory (aCAM) circuit implementations having the capability to store and search outside of a range of values, within any of multiple disjoint ranges, or outside of multiple ranges are disclosed. The disclosed aCAM circuit implementations make searching for complex input features more flexible and efficient, thereby yielding a technological improvement over conventional solutions. In some implementations, an aCAM may include multiple pull-down transistors connected in series to a match line that is pre-charged, in which case, the aCAM detects a match if the match line is not discharged by the pull-down transistors, which occurs if at least one pull-down transistor is in an OFF state. In other implementations, an aCAM includes pass gates connected to a match line to detect a match.

    HARDWARE ACCELERATOR WITH ANALOG-CONTENT ADDRESSABLE MEMORY (A-CAM) FOR DECISION TREE COMPUTATION

    公开(公告)号:US20220122646A1

    公开(公告)日:2022-04-21

    申请号:US17071924

    申请日:2020-10-15

    Abstract: Examples described herein relate to a decision tree computation system in which a hardware accelerator for a decision tree is implemented in the form of an analog Content Addressable Memory (a-CAM) array. The hardware accelerator accesses a decision tree. The decision tree comprises of multiple paths and each path of the multiple paths includes a set of nodes. Each node of the decision tree is associated with a feature variable of multiple feature variables of the decision tree. The hardware accelerator combines multiple nodes among the set of nodes with a same feature variable into a combined single node. Wildcard values are replaced for feature variables not being evaluated in each path. Each combined single node associated with each feature variable is mapped to a corresponding column in the a-CAM array and the multiple paths of the decision tree to rows of the a-CAM array.

    ANALOG CONTENT ADDRESSABLE MEMORY UTILIZING THREE TERMINAL MEMORY DEVICES

    公开(公告)号:US20210343341A1

    公开(公告)日:2021-11-04

    申请号:US16862997

    申请日:2020-04-30

    Abstract: An analog content addressable memory cell includes a match line, a high side, and a low side. The high side encodes a high bound on a range of values and includes a first three terminal memory device. The first three terminal memory device includes a first gate that sets a high voltage bound of the first three terminal memory device. Specifically, an input voltage applied at the first gate of the first memory device, if higher than the high voltage bound, turns the first memory device ON which discharges the match line. Similarly, the low side encodes a lower bound on a range of values and includes a second three terminal memory device. The second three terminal memory device includes a second gate that sets a low voltage bound of the second three terminal memory device. Specifically, an input voltage applied at the second gate of the second memory device, if lower than the low voltage bound, turns the first memory device ON which discharges the match line.

    Content addressable memory-encoded crossbar array in dot product engines

    公开(公告)号:US10930348B1

    公开(公告)日:2021-02-23

    申请号:US16539868

    申请日:2019-08-13

    Abstract: A reprogrammable dot product engine ternary content addressable memory (DPE-TCAM) is provided. The DPE-TCAM comprises a TCAM crossbar array comprising a plurality of match lines and a plurality of search lines. Each search line and match line are coupled together by a memory cell. A plurality of search line drivers are configured to apply a voltage signal to the search lines representing bits of a search word. Current sensing circuitry is coupled to the output of the plurality of match lines and configured to sense a current on the match lines, the sensed current indicating whether the search word and a stored word matched and, if not, the degree of mismatch between the two words.

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