利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

27 条记录 (耗时 0.025 秒)

    TFT-LCD pixel unit and method for manufacturing the same
    21.
    发明授权
    TFT-LCD pixel unit and method for manufacturing the same 有权
    TFT-LCD像素单元及其制造方法

    公开(公告)号：US07892897B2

    公开(公告)日：2011-02-22

    申请号：US11938416

    申请日：2007-11-12

    申请人： Haijun Qiu ,  Zhangtao Wang ,  Tae Yup Min

    发明人： Haijun Qiu ,  Zhangtao Wang ,  Tae Yup Min

    IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/336

    CPC分类号： H01L29/78696 ,  H01L27/124 ,  H01L27/1288

    摘要： A thin film transistor liquid crystal display (TFT-LCD) pixel unit and a method for manufacturing the same. The pixel unit comprises a gate line and a gate electrode formed on a substrate and a first gate insulating layer, an active layer, and a doped layer sequentially that are formed on the gate line and the gate electrode. An intercepting trench is formed on the gate line to cut off the doped layer and the active layer on the gate line. A second insulating layer covers the intercepting trench and the substrate where the gate line and the gate electrode are not formed. A pixel electrode is formed on the second insulating layer and is integrated with the second source/drain electrode.

    摘要翻译： 薄膜晶体管液晶显示器（TFT-LCD）像素单元及其制造方法。 像素单元包括形成在基板上的栅极线和栅电极，以及顺序地形成在栅极线和栅电极上的第一栅极绝缘层，有源层和掺杂层。 在栅极线上形成截止沟槽以切断栅极线上的掺杂层和有源层。 第二绝缘层覆盖不形成栅极线和栅电极的截止沟槽和衬底。 像素电极形成在第二绝缘层上并与第二源极/漏极集成。

    TFT-LCD array substrate and method for manufacturing the same
    22.
    发明授权
    TFT-LCD array substrate and method for manufacturing the same 有权
    TFT-LCD阵列基板及其制造方法

    公开(公告)号：US07636135B2

    公开(公告)日：2009-12-22

    申请号：US11853297

    申请日：2007-09-11

    申请人： Zhangtao Wang ,  Haijun Qiu ,  Tae Yup Min ,  Seung Moo Rim

    发明人： Zhangtao Wang ,  Haijun Qiu ,  Tae Yup Min ,  Seung Moo Rim

    IPC分类号： H01L29/04 ,  H01L21/336

    CPC分类号： H01L27/1288 ,  H01L27/124

    摘要： A TFT-LCD array substrate and a method for manufacturing the same are disclosed. In the TFT-LCD array substrate, a first insulating layer, a semiconductor layer, and an ohmic contact layer are formed sequentially on the gate line and the gate electrode, and the ohmic contact layer is formed on the source region and the drain region of the semiconductor layer and exposes the channel; a second insulating layer is formed on the substrate, covers the sidewalls of the gate line and gate electrode, the first insulating layer, the semiconductor layer, and the ohmic contact layer, and exposes the ohmic contact layer in the source region and the drain region; the data line, the source electrode, the pixel electrode, and the drain electrode are formed on the second insulating layer; a passivation layer is formed on the TFT, the gate line, and the data line and exposes the pixel electrode.

    摘要翻译： 公开了TFT-LCD阵列基板及其制造方法。 在TFT-LCD阵列基板中，在栅极线和栅电极上依次形成第一绝缘层，半导体层和欧姆接触层，并且欧姆接触层形成在源极区和漏极区 半导体层并暴露通道; 在基板上形成第二绝缘层，覆盖栅极线和栅电极的侧壁，第一绝缘层，半导体层和欧姆接触层，并使源极区和漏极区中的欧姆接触层露出 ; 数据线，源电极，像素电极和漏电极形成在第二绝缘层上; 在TFT，栅极线和数据线上形成钝化层，并使像素电极露出。

    TFT-LCD PIXEL UNIT AND METHOD FOR MANUFACTURING THE SAME
    23.
    发明申请
    TFT-LCD PIXEL UNIT AND METHOD FOR MANUFACTURING THE SAME 有权
    TFT-LCD像素单元及其制造方法

    公开(公告)号：US20080111136A1

    公开(公告)日：2008-05-15

    申请号：US11938416

    申请日：2007-11-12

    申请人： Haijun Qiu ,  Zhangtao Wang ,  Tae Yup Min

    发明人： Haijun Qiu ,  Zhangtao Wang ,  Tae Yup Min

    IPC分类号： H01L33/00

    CPC分类号： H01L29/78696 ,  H01L27/124 ,  H01L27/1288

    摘要： A thin film transistor liquid crystal display (TFT-LCD) pixel unit and a method for manufacturing the same. The pixel unit comprises a gate line and a gate electrode formed on a substrate and a first gate insulating layer, an active layer, and a doped layer sequentially that are formed on the gate line and the gate electrode. An intercepting trench is formed on the gate line to cut off the doped layer and the active layer on the gate line. A second insulating layer covers the intercepting trench and the substrate where the gate line and the gate electrode are not formed. A pixel electrode is formed on the second insulating layer and is integrated with the second source/drain electrode.

    摘要翻译： 薄膜晶体管液晶显示器（TFT-LCD）像素单元及其制造方法。 像素单元包括形成在基板上的栅极线和栅电极，以及顺序地形成在栅极线和栅电极上的第一栅极绝缘层，有源层和掺杂层。 在栅极线上形成截止沟槽以切断栅极线上的掺杂层和有源层。 第二绝缘层覆盖不形成栅极线和栅电极的截止沟槽和衬底。 像素电极形成在第二绝缘层上并与第二源极/漏极集成。