公开(公告)号：US08816346B2

公开(公告)日：2014-08-26

申请号：US13664852

申请日：2012-10-31

申请人： Zhangtao Wang ,  Haijun Qiu ,  Tae Yup Min ,  Seung Moo Rim

发明人： Zhangtao Wang ,  Haijun Qiu ,  Tae Yup Min ,  Seung Moo Rim

IPC分类号： H01L29/04 ,  H01L29/66 ,  H01L27/12

CPC分类号： H01L29/66765 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1288

摘要： A TFT array substrate and a manufacturing method thereof, where the TFT array substrate includes a substrate; a gate line and a gate electrode integrated therewith, which are covered by a gate insulating layer, a semiconductor layer, and a ohmic contact layer sequentially. An insulating layer is formed on the resulting substrate and on both sides of the gate line and the gate electrode, the gate insulating layer, the semiconductor layer, and the ohmic contact layer. A trench is then formed in the ohmic contact layer to divide the ohmic contact layer over the semiconductor layer. A data line and first and second source/drain electrodes are then formed on the insulating layer and the ohmic contact layer.

摘要翻译： TFT阵列基板及其制造方法，其中，TFT阵列基板包括基板; 栅极线和栅极电极，其被栅极绝缘层，半导体层和欧姆接触层依次覆盖。 在所得到的衬底上以及栅极线和栅电极，栅绝缘层，半导体层和欧姆接触层的两侧上形成绝缘层。 然后在欧姆接触层中形成沟槽，以将半导体层上的欧姆接触层分开。 然后在绝缘层和欧姆接触层上形成数据线和第一和第二源极/漏极。

公开(公告)号：US08642404B2

公开(公告)日：2014-02-04

申请号：US13735166

申请日：2013-01-07

申请人： Chaoyong Deng ,  Seung Moo Rim

发明人： Chaoyong Deng ,  Seung Moo Rim

IPC分类号： H01L21/335

CPC分类号： H01L29/66765 ,  G02F1/1362 ,  G02F2001/13625 ,  H01L24/24 ,  H01L27/1214 ,  H01L27/1288 ,  H01L33/62 ,  H01L2924/15788 ,  H01L2924/00

摘要： A TFT LCD array substrate and a manufacturing method thereof. The manufacturing method includes the steps of: forming a thin film transistor on a substrate to form a gate line and a gate electrode connected with the gate line on the substrate; forming a gate insulating layer and a semiconductor layer on the gate electrode; forming an ohmic contact layer on the semiconductor layer; forming a transparent pixel electrode layer and a source/drain electrode metal layer in sequence on the resultant substrate, wherein the transparent pixel electrode layer is electrically insulated from the gate line and the gate electrode, and the transparent pixel electrode layer forms an ohmic contact with two sides of the semiconductor layer via the ohmic contact layer; and performing masking and etching with a gray tone mask with respect to the resultant substrate to form a transparent pixel electrode, a source/drain electrode and a data line simultaneously.

摘要翻译： 一种TFT LCD阵列基板及其制造方法。 该制造方法包括以下步骤：在衬底上形成薄膜晶体管以形成与衬底上的栅极线连接的栅极线和栅电极; 在栅电极上形成栅极绝缘层和半导体层; 在所述半导体层上形成欧姆接触层; 在所得到的基板上依次形成透明像素电极层和源极/漏极电极金属层，其中透明像素电极层与栅极线和栅电极电绝缘，并且透明像素电极层与 经由欧姆接触层的半导体层的两侧; 并且使用相对于所得到的基板的灰度调色掩模进行掩模和蚀刻，以同时形成透明像素电极，源极/漏极电极和数据线。

公开(公告)号：US08199270B2

公开(公告)日：2012-06-12

申请号：US12648480

申请日：2009-12-29

申请人： Xiang Liu ,  Seung Moo Rim ,  Xu Chen ,  Zhenyu Xie

发明人： Xiang Liu ,  Seung Moo Rim ,  Xu Chen ,  Zhenyu Xie

IPC分类号： G02F1/136

CPC分类号： H01L27/1288 ,  H01L29/78618 ,  H01L29/78696

摘要： The present invention relates to a method of manufacturing an array substrate of TFT-LCD. The method includes the following steps. In step 1, a gate metal thin film is deposited on a substrate and patterned into gate electrodes and gate lines by a first patterning process. In step 2, a gate insulation layer, a semiconductor layer and a barrier layer are subsequently deposited on the resultant structure of step 1 and are patterned into gate insulation layer pattern, semiconductor layer pattern and barrier layer pattern by a second patterning process, wherein the barrier layer is used for preventing the semiconductor layer at the TFT channel from being etched. In step 3, an ohmic contact layer, a transparent conductive layer, a source drain metal layer and a passivation layer are subsequently deposited on the resultant structure of step 2, and are patterned into ohmic contact layer pattern, pixel electrodes, data lines, source electrodes, drain electrodes and passivation layer pattern in a patterning process.

摘要翻译： 本发明涉及TFT-LCD阵列基板的制造方法。 该方法包括以下步骤。 在步骤1中，栅极金属薄膜沉积在衬底上并通过第一图案化工艺图案化成栅电极和栅极线。 在步骤2中，随后将栅极绝缘层，半导体层和阻挡层沉积在步骤1的结果上，并通过第二图案化工艺图案化为栅极绝缘层图案，半导体层图案和势垒层图案，其中 阻挡层用于防止TFT沟道处的半导体层被蚀刻。 在步骤3中，随后在步骤2的合成结构上沉积欧姆接触层，透明导电层，源极漏极金属层和钝化层，并将其图案化为欧姆接触层图案，像素电极，数据线，源极 电极，漏电极和钝化层图案。

公开(公告)号：US08049218B2

公开(公告)日：2011-11-01

申请号：US12830831

申请日：2010-07-06

申请人： Zhangtao Wang ,  Haijun Qiu ,  Tae Yup Min ,  Seung Moo Rim

发明人： Zhangtao Wang ,  Haijun Qiu ,  Tae Yup Min ,  Seung Moo Rim

IPC分类号： H01L29/04

CPC分类号： H01L27/1248 ,  H01L27/1288

摘要： A TFT LCD array substrate and a manufacturing method thereof. The TFT LCD array substrate comprises a substrate. A gate line and a gate electrode that is formed integrally with the gate line are formed on the substrate. A first insulating layer and a semiconductor layer are formed sequentially on the gate line and the gate electrode. A second insulting layer covers sidewalls of the gate line and the gate electrode, the first insulating layer, and the semiconductor layer. An etching stop layer is formed on the semiconductor layer and exposes a part of the semiconductor layer on both sides of the etching stop layer. The TFT LCD of the present invention can be manufactured with a four-mask process.

摘要翻译： 一种TFT LCD阵列基板及其制造方法。 TFT LCD阵列基板包括基板。 在基板上形成与栅极线一体形成的栅极线和栅电极。 在栅极线和栅电极上依次形成第一绝缘层和半导体层。 第二绝缘层覆盖栅极线和栅电极，第一绝缘层和半导体层的侧壁。 在半导体层上形成蚀刻停止层，在蚀刻停止层的两侧露出半导体层的一部分。 本发明的TFT LCD可以用四掩模工艺制造。

公开(公告)号：US08030654B2

公开(公告)日：2011-10-04

申请号：US12061425

申请日：2008-04-02

申请人： Jianshe Xue ,  Seung Moo Rim ,  Ke Liang

发明人： Jianshe Xue ,  Seung Moo Rim ,  Ke Liang

IPC分类号： H01L29/76 ,  H01L31/36 ,  H01L31/112

CPC分类号： H01L29/458 ,  H01L29/78618

摘要： A thin film transistor comprising a gate electrode, a gate insulating layer, an active layer, and source and drain electrodes is provided. The gate electrode overlaps with a channel region of the active layer, the gate insulating layer is provided between the gate electrode and the active layer, the source and drain electrodes overlap a source region and a drain region of the active layer, respectively, and a thin film of SiNx or SiOxNy through which electrons are allowed to tunnel is provided between the active layer and the source and drain electrodes.

摘要翻译： 提供了包括栅极，栅极绝缘层，有源层以及源极和漏极的薄膜晶体管。 栅电极与有源层的沟道区重叠，栅极绝缘层设置在栅电极和有源层之间，源极和漏极分别与有源层的源极区和漏极区重叠，并且 在有源层和源电极和漏电极之间设置SiNx或SiOxNy的允许电子通道的薄膜。

公开(公告)号：US20110223700A1

公开(公告)日：2011-09-15

申请号：US13096380

申请日：2011-04-28

申请人： Chaoyong Deng ,  Seung Moo Rim

发明人： Chaoyong Deng ,  Seung Moo Rim

IPC分类号： H01L21/336

CPC分类号： H01L29/66765 ,  G02F1/1362 ,  G02F2001/13625 ,  H01L24/24 ,  H01L27/1214 ,  H01L27/1288 ,  H01L33/62 ,  H01L2924/15788 ,  H01L2924/00

摘要： A TFT LCD array substrate and a manufacturing method thereof. The manufacturing method includes the steps of forming a thin film transistor on a substrate to form a gate line and a gate electrode connected with the gate line on the substrate; forming a gate insulating layer and a semiconductor layer on the gate electrode; forming an ohmic contact layer on the semiconductor layer; forming a transparent pixel electrode layer and a source/drain electrode metal layer in sequence on the resultant substrate, wherein the transparent pixel electrode layer is electrically insulated from the gate line and the gate electrode, and the transparent pixel electrode layer forms an ohmic contact with two sides of the semiconductor layer via the ohmic contact layer; and performing masking and etching with a gray tone mask with respect to the resultant substrate to form a transparent pixel electrode, a source/drain electrode and a data line simultaneously.

摘要翻译： 一种TFT LCD阵列基板及其制造方法。 该制造方法包括以下步骤：在衬底上形成薄膜晶体管以形成与衬底上的栅极线连接的栅极线和栅电极; 在栅电极上形成栅极绝缘层和半导体层; 在所述半导体层上形成欧姆接触层; 在所得到的基板上依次形成透明像素电极层和源极/漏极电极金属层，其中透明像素电极层与栅极线和栅电极电绝缘，并且透明像素电极层与 经由欧姆接触层的半导体层的两侧; 并且使用相对于所得到的基板的灰度调色掩模进行掩模和蚀刻，以同时形成透明像素电极，源极/漏极电极和数据线。

公开(公告)号：US07952099B2

公开(公告)日：2011-05-31

申请号：US11737954

申请日：2007-04-20

申请人： Chaoyong Deng ,  Seung Moo Rim

发明人： Chaoyong Deng ,  Seung Moo Rim

IPC分类号： H01L27/14

CPC分类号： H01L29/66765 ,  G02F1/1362 ,  G02F2001/13625 ,  H01L24/24 ,  H01L27/1214 ,  H01L27/1288 ,  H01L33/62 ,  H01L2924/15788 ,  H01L2924/00

摘要： A TFT LCD array substrate and a manufacturing method thereof. The manufacturing method includes the steps of: forming a thin film transistor on a substrate to form a gate line and a gate electrode connected with the gate line on the substrate; forming a gate insulating layer and a semiconductor layer on the gate electrode; forming an ohmic contact layer on the semiconductor layer; forming a transparent pixel electrode layer and a source/drain electrode metal layer in sequence on the resultant substrate, wherein the transparent pixel electrode layer is electrically insulated from the gate line and the gate electrode, and the transparent pixel electrode layer forms an ohmic contact with two sides of the semiconductor layer via the ohmic contact layer; and performing masking and etching with a gray tone mask with respect to the resultant substrate to form a transparent pixel electrode, a source/drain electrode and a data line simultaneously.

摘要翻译： 一种TFT LCD阵列基板及其制造方法。 该制造方法包括以下步骤：在衬底上形成薄膜晶体管以形成与衬底上的栅极线连接的栅极线和栅电极; 在栅电极上形成栅极绝缘层和半导体层; 在所述半导体层上形成欧姆接触层; 在所得到的基板上依次形成透明像素电极层和源极/漏极电极金属层，其中透明像素电极层与栅极线和栅电极电绝缘，并且透明像素电极层与 经由欧姆接触层的半导体层的两侧; 并且使用相对于所得到的基板的灰度调色掩模进行掩模和蚀刻，以同时形成透明像素电极，源极/漏极电极和数据线。

公开(公告)号：US20100165227A1

公开(公告)日：2010-07-01

申请号：US12648480

申请日：2009-12-29

申请人： Xiang LIU ,  Seung Moo RIM ,  Xu CHEN ,  Zhenyu XIE

发明人： Xiang LIU ,  Seung Moo RIM ,  Xu CHEN ,  Zhenyu XIE

IPC分类号： G02F1/1368

CPC分类号： H01L27/1288 ,  H01L29/78618 ,  H01L29/78696

摘要： The present invention relates to a method of manufacturing an array substrate of TFT-LCD. The method includes the following steps. In step 1, a gate metal thin film is deposited on a substrate and patterned into gate electrodes and gate lines by a first patterning process. In step 2, a gate insulation layer, a semiconductor layer and a barrier layer are subsequently deposited on the resultant structure of step 1 and are patterned into gate insulation layer pattern, semiconductor layer pattern and barrier layer pattern by a second patterning process, wherein the barrier layer is used for preventing the semiconductor layer at the TFT channel from being etched. In step 3, an ohmic contact layer, a transparent conductive layer, a source drain metal layer and a passivation layer are subsequently deposited on the resultant structure of step 2, and are patterned into ohmic contact layer pattern, pixel electrodes, data lines, source electrodes, drain electrodes and passivation layer pattern in a patterning process.

摘要翻译： 本发明涉及TFT-LCD阵列基板的制造方法。 该方法包括以下步骤。 在步骤1中，栅极金属薄膜沉积在衬底上并通过第一图案化工艺图案化成栅电极和栅极线。 在步骤2中，随后将栅极绝缘层，半导体层和阻挡层沉积在步骤1的结果上，并通过第二图案化工艺图案化为栅极绝缘层图案，半导体层图案和势垒层图案，其中 阻挡层用于防止TFT沟道处的半导体层被蚀刻。 在步骤3中，随后在步骤2的合成结构上沉积欧姆接触层，透明导电层，源极漏极金属层和钝化层，并将其图案化为欧姆接触层图案，像素电极，数据线，源极 电极，漏电极和钝化层图案。

公开(公告)号：US07636135B2

公开(公告)日：2009-12-22

申请号：US11853297

申请日：2007-09-11

申请人： Zhangtao Wang ,  Haijun Qiu ,  Tae Yup Min ,  Seung Moo Rim

发明人： Zhangtao Wang ,  Haijun Qiu ,  Tae Yup Min ,  Seung Moo Rim

IPC分类号： H01L29/04 ,  H01L21/336

CPC分类号： H01L27/1288 ,  H01L27/124

摘要： A TFT-LCD array substrate and a method for manufacturing the same are disclosed. In the TFT-LCD array substrate, a first insulating layer, a semiconductor layer, and an ohmic contact layer are formed sequentially on the gate line and the gate electrode, and the ohmic contact layer is formed on the source region and the drain region of the semiconductor layer and exposes the channel; a second insulating layer is formed on the substrate, covers the sidewalls of the gate line and gate electrode, the first insulating layer, the semiconductor layer, and the ohmic contact layer, and exposes the ohmic contact layer in the source region and the drain region; the data line, the source electrode, the pixel electrode, and the drain electrode are formed on the second insulating layer; a passivation layer is formed on the TFT, the gate line, and the data line and exposes the pixel electrode.

摘要翻译： 公开了TFT-LCD阵列基板及其制造方法。 在TFT-LCD阵列基板中，在栅极线和栅电极上依次形成第一绝缘层，半导体层和欧姆接触层，并且欧姆接触层形成在源极区和漏极区 半导体层并暴露通道; 在基板上形成第二绝缘层，覆盖栅极线和栅电极的侧壁，第一绝缘层，半导体层和欧姆接触层，并使源极区和漏极区中的欧姆接触层露出 ; 数据线，源电极，像素电极和漏电极形成在第二绝缘层上; 在TFT，栅极线和数据线上形成钝化层，并使像素电极露出。

公开(公告)号：US20090206346A1

公开(公告)日：2009-08-20

申请号：US12434372

申请日：2009-05-01

申请人： Chunping Long ,  Jigang Zhao ,  Seung Moo Rim

发明人： Chunping Long ,  Jigang Zhao ,  Seung Moo Rim

IPC分类号： H01L33/00 ,  H01L21/336

CPC分类号： H01L27/1288 ,  G02F1/136227 ,  G02F2001/136231 ,  G02F2001/136236 ,  H01L27/1214

摘要： The present invention discloses a method for manufacturing a TFT LCD array substrate by utilizing the gray tone mask technology and the photoresist lifting-off technology with only two masks in two photolithography processes, and to a TFT LCD array substrate manufactured by the same. In the resultant array substrate, the gate line and the data line are perpendicular to and intersect with each other to define the pixel area, and one of the gate line and the data line is continuous and the other is discontinuous. The array substrate is covered with a passivation protection film. The disconnected gate line or the data line is connected together through the via holes formed in the passivation protection film and the connecting conductive film formed on the passivation protection film. The data line and the source electrode and drain electrode of the TFT are made of the same conductive film, and the connecting conductive film and the pixel electrode are made of the same conductive film in the same photolithography process.

摘要翻译： 本发明公开了通过在两个光刻工艺中仅使用两个掩模的灰色蒙版技术和光致抗蚀剂剥离技术以及由其制造的TFT LCD阵列基板来制造TFT LCD阵列基板的方法。 在合成的阵列基板中，栅极线和数据线彼此垂直并相交，以限定像素区域，并且栅极线和数据线之一是连续的，而另一个是不连续的。 阵列基板被钝化保护膜覆盖。 断开的栅线或数据线通过形成在钝化保护膜上的通孔和形成在钝化保护膜上的连接导电膜连接在一起。 TFT的数据线和源电极和漏电极由相同的导电膜制成，并且在相同的光刻工艺中，连接导电膜和像素电极由相同的导电膜制成。