公开(公告)号：US20090269860A1

公开(公告)日：2009-10-29

申请号：US12411665

申请日：2009-03-26

申请人： Tatsunori MURATA ,  Mikio Tsujiuchi ,  Ryoji Matsuda

发明人： Tatsunori MURATA ,  Mikio Tsujiuchi ,  Ryoji Matsuda

IPC分类号： H01L43/12

CPC分类号： H01L27/228 ,  G11C11/16

摘要： To provide a manufacturing method of a semiconductor device capable of forming, as a protective film of an MTJ element, a silicon nitride film having good insulation properties without deteriorating the properties of the MTJ element. The method of the invention includes steps of forming a silicon nitride film over the entire surface including an MTJ element portion (MTJ element and an upper electrode) while using a parallel plate plasma CVD apparatus as a film forming apparatus and a film forming gas not containing NH3 but composed of SiH4/N2/helium (He). The film forming temperature is set at from 200 to 350° C. More ideally, a flow rate ratio of He to SiH4 is set at from 100 to 125.

摘要翻译： 为了提供能够形成具有良好绝缘性能的氮化硅膜作为MTJ元件的保护膜的半导体器件的制造方法，而不会劣化MTJ元件的性质。 本发明的方法包括以下步骤：在使用平板等离子体CVD装置作为成膜装置的同时，在包括MTJ元件部分（MTJ元件和上电极）的整个表面上形成氮化硅膜，以及不含 NH3，但由SiH4 / N2 /氦（He）组成。 成膜温度设定在200〜350℃。更理想的是，将He与SiH4的流量比设定为100〜125。

公开(公告)号：US07935542B2

公开(公告)日：2011-05-03

申请号：US12411665

申请日：2009-03-26

申请人： Tatsunori Murata ,  Mikio Tsujiuchi ,  Ryoji Matsuda

发明人： Tatsunori Murata ,  Mikio Tsujiuchi ,  Ryoji Matsuda

IPC分类号： H01L21/00

CPC分类号： H01L27/228 ,  G11C11/16

摘要： To provide a manufacturing method of a semiconductor device capable of forming, as a protective film of an MTJ element, a silicon nitride film having good insulation properties without deteriorating the properties of the MTJ element. The method of the invention includes steps of forming a silicon nitride film over the entire surface including an MTJ element portion (MTJ element and an upper electrode) while using a parallel plate plasma CVD apparatus as a film forming apparatus and a film forming gas not containing NH3 but composed of SiH4/N2/helium (He). The film forming temperature is set at from 200 to 350° C. More ideally, a flow rate ratio of He to SiH4 is set at from 100 to 125.

摘要翻译： 为了提供能够形成具有良好绝缘性能的氮化硅膜作为MTJ元件的保护膜的半导体器件的制造方法，而不会劣化MTJ元件的性能。 本发明的方法包括以下步骤：在使用平板等离子体CVD装置作为成膜装置的同时，在包括MTJ元件部分（MTJ元件和上电极）的整个表面上形成氮化硅膜，以及不含 NH3，但由SiH4 / N2 /氦（He）组成。 成膜温度设定在200〜350℃。更理想的是，将He与SiH4的流量比设定为100〜125。

公开(公告)号：US4989967A

公开(公告)日：1991-02-05

申请号：US334852

申请日：1989-04-06

申请人： Ryoji Matsuda

发明人： Ryoji Matsuda

IPC分类号： G02C7/16 ,  G02C7/10 ,  G02C7/12 ,  G02C11/02

CPC分类号： G02C7/105 ,  G02C11/02 ,  G02C7/12 ,  G02C2202/16

摘要： A lens for spectacles having at least one side thereof coated with a surface layer in a predetermined pattern so that transparent portions will be left on the lens. The transparent portions should have such an area that the light transmission rate will be larger than a predetermined value. The surface layer may be made of a fluorescent material, a light absorbing material or a light reflecting material. An interface layer such as a light absorbing layer may be interposed between the lens body and the surface layer. A protective layer may be provided on the surface layer. The lens may be made by bonding two half lenses with surface layers sandwiched therebetween.

摘要翻译： 一种用于眼镜的透镜，其至少一侧以预定图案涂覆有表面层，使得透明部分将留在透镜上。 透明部分应具有光透射率将大于预定值的区域。 表面层可以由荧光材料，光吸收材料或光反射材料制成。 诸如光吸收层的界面层可以插入在透镜体和表面层之间。 可以在表面层上设置保护层。 透镜可以通过粘合两个半透镜并且夹在其间的表面层而制成。

公开(公告)号：US08264023B2

公开(公告)日：2012-09-11

申请号：US12971783

申请日：2010-12-17

申请人： Yosuke Takeuchi ,  Masamichi Matsuoka ,  Ryoji Matsuda ,  Keisuke Tsukamoto

发明人： Yosuke Takeuchi ,  Masamichi Matsuoka ,  Ryoji Matsuda ,  Keisuke Tsukamoto

IPC分类号： H01L21/02

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  H01L27/228 ,  H01L43/12

摘要： A semiconductor device includes a semiconductor substrate, a lower electrode, a magnetoresistive element, an upper electrode, and a protective film. The lower electrode is formed over the semiconductor substrate. The magnetoresistive element includes a fixed layer, a tunneling insulating film, and a free layer. The upper electrode is disposed over the free layer. The protective film covers the sides intersecting the main surfaces of the lower electrode, the fixed layer, the tunneling insulating film, the free layer, and the upper electrode. The fixed layer, whose magnetization direction is fixed, is disposed over the lower electrode. The tunneling insulating film is disposed over the fixed layer. The free layer, whose magnetization direction is variable, is disposed over a main surface of the tunneling insulating film. The width of the upper electrode is smaller than that of each of the lower electrode and the fixed layer.

摘要翻译： 半导体器件包括半导体衬底，下电极，磁阻元件，上电极和保护膜。 下电极形成在半导体衬底上。 磁阻元件包括固定层，隧道绝缘膜和自由层。 上电极设置在自由层上。 保护膜覆盖与下电极，固定层，隧道绝缘膜，自由层和上电极的主表面相交的侧面。 磁化方向固定的固定层设置在下电极上。 隧道绝缘膜设置在固定层上。 其磁化方向可变的自由层设置在隧道绝缘膜的主表面上。 上电极的宽度小于下电极和固定层的宽度。

公开(公告)号：US20100180697A1

公开(公告)日：2010-07-22

申请号：US12524254

申请日：2007-12-21

申请人： Hiroshi Igarashi ,  Ryoji Matsuda

发明人： Hiroshi Igarashi ,  Ryoji Matsuda

IPC分类号： G01L1/22

CPC分类号： B25J15/0009 ,  B25J13/084

摘要： The present invention provides a tactile sensor which can reproduce a sensor surface in contact with a sensing object and contribute to a reduction in cost of an automation system which utilizes an industrial robot, the tactile sensor including: a contact-portion unit 12 composed of a flexible material; a contact-portion housing unit 11 which surrounds and houses the contact-portion unit in a removable state while forming a posture so that a top portion of the contact-portion unit may project; and a strain sensing element 15 or a pressure sensing element embedded into the contact-portion housing unit.

摘要翻译： 本发明提供了一种触觉传感器，其可以再现与感测对象接触的传感器表面，并有助于降低利用工业机器人的自动化系统的成本，该触觉传感器包括：接触部分单元12，其由 柔性材料; 接触部分壳体单元11，其在形成姿态的同时以接触部分单元的顶部突出的方式围绕并容纳接触部分单元处于可移除状态; 以及应变感测元件15或嵌入到接触部分壳体单元中的压力感测元件。