公开(公告)号：US5925185A

公开(公告)日：1999-07-20

申请号：US878772

申请日：1997-06-19

申请人： Shigeki Kawashima ,  Hiroshi Inagaki ,  Hirotaka Nakajima

发明人： Shigeki Kawashima ,  Hiroshi Inagaki ,  Hirotaka Nakajima

IPC分类号： C30B15/00 ,  C30B15/30 ,  C30B29/06 ,  C30B30/04 ,  C30B15/22

CPC分类号： C30B15/305 ,  Y10S117/917 ,  Y10T117/1032

摘要： A method for fabricating a semiconductor single crystal by the MCZ method by which it is possible to pull large diameter and heavy semiconductor single crystals without breaking the contraction portion, is provided.In the contracting step, change the shape of the crystal growth interface by making the range of the temperature fluctuation caused by convection in the vicinity of the melt surface more than 5.degree. C. so as to eliminate the dislocation in the contracted portion. When a transverse magnetic field is applied by magnets 6,6, the magnetic field intensity is set below 2000 Gauss to properly change the shape of the crystal growth interface to form the contracted portion 10. Thus,even though the diameter of the contracted portion 10 is larger than normal, free dislocation is achieved. After the dislocation is eliminated, the magnetic field intensity is recovered and shoulder 11 is formed. When a cusp magnetic field is applied, the contracting is performed when the magnetic field intensity of one of the upper-and-lower magnets being increased while the magnetic field intensity of another magnet is decreased or the upper-and-lower magnets are moved in a vertical direction to make the vicinity of the melt surface similar to a longitudinal magnetic field. After dislocation is eliminated, the magnetic field intensity of the upper-and-lower magnets or the position of the magnets is recovered.

摘要翻译： 提供了一种通过MCZ方法制造半导体单晶的方法，通过该方法可以拉伸大直径和重的半导体单晶而不破坏收缩部分。 在收缩步骤中，通过使熔体表面附近的对流引起的温度波动的范围超过5℃来改变晶体生长界面的形状，以消除收缩部分中的位错。 当通过磁体6,6施加横向磁场时，将磁场强度设定为低于2000高斯以适当地改变晶体生长界面的形状以形成收缩部分10.因此，即使收缩部分10的直径 大于正常，实现自由脱位。 在消除位错之后，恢复磁场强度并形成肩部11。 当施加尖点磁场时，当上下磁体中的一个磁体的磁场强度增加，而另一磁体的磁场强度减小或上下磁体移动时，执行收缩 垂直方向使熔融表面的附近类似于纵向磁场。 在消除位错之后，回收上下磁体的磁场强度或磁体的位置。

公开(公告)号：US06838111B2

公开(公告)日：2005-01-04

申请号：US10058738

申请日：2002-01-30

申请人： Takao Nakano ,  Shigeki Kawashima ,  Masaki Sato

发明人： Takao Nakano ,  Shigeki Kawashima ,  Masaki Sato

IPC分类号： A23L11/30 ,  A23C11/10 ,  A23C20/02 ,  A23L11/00 ,  A23L3/22

CPC分类号： A23C11/103 ,  A23C20/025

摘要： Soymilk and tofu manufacturing method increases a ratio of fine soymilk particles to provide soymilk and tofu that have no grassy smell and are excellent in the taste and flavor, especially in the rich and milky taste. Raw material soybeans are dipped in softened water and ground while softened water is being added. Soy pulp thereof is separated to obtain soymilk. A high temperature, reduced pressure treatment is applied wherein the soymilk is first heated to 120 to 150° C. and then the pressure is reduced to −0.05 to −0.08 MPa. Thereafter, a high pressure treatment is applied wherein a double tube type heating device is employed, the soymilk flows within an inner tube and heating medium flows in a space between the inner tube and outer tube and the soymilk is treated under a pressure of 5 to 15 MPa and a temperature of 70 to 100° C. Or, a high pressure homogenizer is used and the soymilk is treated under a pressure of 20 to 150 MPa and a temperature of 70 to 80° C.

摘要翻译： 豆浆和豆腐制造方法提高了细豆浆颗粒的比例，提供无草味的豆浆和豆腐，味道和风味优异，特别是在丰富的乳状味道中。 原料大豆浸入软化水​​和地面，同时加入软化水。 将其大豆浆分离以获得豆浆。 应用高温减压处理，其中首先将豆浆加热至120至150℃，然后将压力降低至-0.05至-08MPa。 此后，应用高压处理，其中使用双管式加热装置，豆浆在内管内流动，加热介质在内管和外管之间的空间中流动，豆浆在压力为5至 15MPa，温度70〜100℃。或者使用高压均化器，在20〜150MPa的压力和70〜80℃的温度下对豆浆进行处理。

公开(公告)号：US5871582A

公开(公告)日：1999-02-16

申请号：US956286

申请日：1997-10-23

申请人： Shigeki Kawashima

发明人： Shigeki Kawashima

IPC分类号： C30B15/00 ,  C30B15/10 ,  C30B29/06 ,  H01L21/208 ,  C30B35/00

CPC分类号： C30B15/00 ,  C30B15/10 ,  Y10S117/90 ,  Y10T117/1032 ,  Y10T117/1052

摘要： This invention provides a melt receiver for a semiconductor single-crystal manufacturing device, which is capable of protecting the main chamber from being damaged by the outflow of the melt or dropping of the debris of the broken crucibles and therefore preventing steam explosion. The melt receiver 1 is consisted of an adiabatic member 3 made of carbon fibers; a cover 2 made of high strength C/C material which shelters the surface of the adiabatic member 3; and a bottom plate 4. A groove 2a is formed on the upper surface of the cover 2. The groove 2a has a size capable of accommodating all of the melt stored in the quartz crucible 7. The melt flown out or articles dropped down due to damage of the crucible are received by the melt receiver 1, and the melt flown out can not reach the bottom of the main chamber 9. The melt receiver can also be consisted of a melt absorption layer made of adiabatic material, and a melt isolation layer made of graphite or high strength C/C material.

摘要翻译： 本发明提供了一种用于半导体单晶制造装置的熔体接收器，其能够保护主室免受熔体的流出或破碎的坩埚的碎屑的损坏，从而防止蒸汽爆炸。 熔体接收器1由碳纤维制成的绝热部件3构成。 由高强度C / C材料制成的覆盖物2，其覆盖绝热构件3的表面; 和底板4.槽2a形成在盖2的上表面上。槽2a具有能够容纳存储在石英坩埚7中的所有熔体的尺寸。熔体流出或由于 坩埚的损坏被熔体接收器1接收，并且流出的熔体不能到达主室9的底部。熔体接收器也可以由绝热材料制成的熔体吸收层和熔体隔离层 由石墨或高强度C / C材料制成。