公开(公告)号：US20080135785A1

公开(公告)日：2008-06-12

申请号：US12006848

申请日：2008-01-07

申请人： Hiromichi Takaoka ,  Mitsuru Nakata

发明人： Hiromichi Takaoka ,  Mitsuru Nakata

IPC分类号： G21K5/00

CPC分类号： H01L21/02691 ,  C30B13/24 ,  H01L21/0268 ,  H01L21/2026 ,  H01L29/66757 ,  H01L29/78675

摘要： A method of manufacturing a semiconductor thin film includes (A) forming an amorphous semiconductor film on a substrate, (B) irradiating a beam to a surface of the amorphous semiconductor film such that a predetermined region of the amorphous semiconductor film is melted and solidified to form a crystallized semiconductor film, and (C) scanning the beam in a first direction. A second direction is a direction on the surface of the amorphous semiconductor film perpendicular to the first direction. A length along the second direction of a cross section of the beam is substantially equal to or less than two times a width along the second direction of the crystallized semiconductor film.

摘要翻译： 制造半导体薄膜的方法包括：（A）在基板上形成非晶半导体膜，（B）向非晶半导体膜的表面照射光束使得非晶半导体膜的规定区域熔融固化为 形成结晶半导体膜，（C）沿第一方向扫描光束。 第二方向是在垂直于第一方向的非晶半导体膜的表面上的方向。 沿着梁的横截面的第二方向的长度基本上等于或小于沿着结晶的半导体膜的第二方向的宽度的两倍。

公开(公告)号：US07354810B2

公开(公告)日：2008-04-08

申请号：US10856275

申请日：2004-05-28

申请人： Hiromichi Takaoka ,  Mitsuru Nakata

发明人： Hiromichi Takaoka ,  Mitsuru Nakata

IPC分类号： H01L21/324

CPC分类号： H01L21/02691 ,  C30B13/24 ,  H01L21/0268 ,  H01L21/2026 ,  H01L29/66757 ,  H01L29/78675

摘要： A method of manufacturing a semiconductor thin film includes (A) forming an amorphous semiconductor film on a substrate, (B) irradiating a beam to a surface of the amorphous semiconductor film such that a predetermined region of the amorphous semiconductor film is melted and solidified to form a crystallized semiconductor film, and (C) scanning the beam in a first direction. A second direction is a direction on the surface of the amorphous semiconductor film perpendicular to the first direction. A length along the second direction of a cross section of the beam is substantially equal to or less than two times a width along the second direction of the crystallized semiconductor film.

公开(公告)号：US06680460B1

公开(公告)日：2004-01-20

申请号：US09639471

申请日：2000-08-16

申请人： Hiromichi Takaoka ,  Tomoyuki Akashi

发明人： Hiromichi Takaoka ,  Tomoyuki Akashi

IPC分类号： B23K2606

CPC分类号： B23K26/066 ,  B23K2101/40 ,  H01L21/268

摘要： In a semiconductor thin film producing apparatus for irradiating a semiconductor thin film by a laser beam through an aperture pattern formed in a mask to reform the semiconductor thin film, the mask has a reflecting surface having a reflectance not smaller than 70% with respect to the laser beam. An absorbing substrate is arranged at a position before the laser beam is irradiated onto the mask. The absorbing substrate is for locally absorbing the laser beam and is for absorbing a reflected beam which is reflected by the reflecting surface of the mask when the laser beam is irradiated onto the reflecting surface of the mask.

摘要翻译： 在半导体薄膜制造装置中，通过激光束通过形成在掩模中的孔径图案来照射半导体薄膜以对半导体薄膜进行重整，半导体薄膜制造装置具有反射面相对于该半导体薄膜的反射率不小于70％ 激光束。 吸收基板被布置在激光束照射到掩模之前的位置。 吸收衬底用于局部吸收激光束，并且用于吸收当激光束照射到掩模的反射表面上时被掩模的反射表面反射的反射光束。