公开(公告)号：US07354810B2

公开(公告)日：2008-04-08

申请号：US10856275

申请日：2004-05-28

申请人： Hiromichi Takaoka ,  Mitsuru Nakata

发明人： Hiromichi Takaoka ,  Mitsuru Nakata

IPC分类号： H01L21/324

CPC分类号： H01L21/02691 ,  C30B13/24 ,  H01L21/0268 ,  H01L21/2026 ,  H01L29/66757 ,  H01L29/78675

摘要： A method of manufacturing a semiconductor thin film includes (A) forming an amorphous semiconductor film on a substrate, (B) irradiating a beam to a surface of the amorphous semiconductor film such that a predetermined region of the amorphous semiconductor film is melted and solidified to form a crystallized semiconductor film, and (C) scanning the beam in a first direction. A second direction is a direction on the surface of the amorphous semiconductor film perpendicular to the first direction. A length along the second direction of a cross section of the beam is substantially equal to or less than two times a width along the second direction of the crystallized semiconductor film.

公开(公告)号：US20080135785A1

公开(公告)日：2008-06-12

申请号：US12006848

申请日：2008-01-07

申请人： Hiromichi Takaoka ,  Mitsuru Nakata

发明人： Hiromichi Takaoka ,  Mitsuru Nakata

IPC分类号： G21K5/00

CPC分类号： H01L21/02691 ,  C30B13/24 ,  H01L21/0268 ,  H01L21/2026 ,  H01L29/66757 ,  H01L29/78675

摘要： A method of manufacturing a semiconductor thin film includes (A) forming an amorphous semiconductor film on a substrate, (B) irradiating a beam to a surface of the amorphous semiconductor film such that a predetermined region of the amorphous semiconductor film is melted and solidified to form a crystallized semiconductor film, and (C) scanning the beam in a first direction. A second direction is a direction on the surface of the amorphous semiconductor film perpendicular to the first direction. A length along the second direction of a cross section of the beam is substantially equal to or less than two times a width along the second direction of the crystallized semiconductor film.

摘要翻译： 制造半导体薄膜的方法包括：（A）在基板上形成非晶半导体膜，（B）向非晶半导体膜的表面照射光束使得非晶半导体膜的规定区域熔融固化为 形成结晶半导体膜，（C）沿第一方向扫描光束。 第二方向是在垂直于第一方向的非晶半导体膜的表面上的方向。 沿着梁的横截面的第二方向的长度基本上等于或小于沿着结晶的半导体膜的第二方向的宽度的两倍。

公开(公告)号：US20050003591A1

公开(公告)日：2005-01-06

申请号：US10856275

申请日：2004-05-28

申请人： Hiromichi Takaoka ,  Mitsuru Nakata

发明人： Hiromichi Takaoka ,  Mitsuru Nakata

IPC分类号： C30B13/24 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786 ,  H01L21/00 ,  C30B1/00 ,  H01L21/477 ,  H01L21/84

CPC分类号： H01L21/02691 ,  C30B13/24 ,  H01L21/0268 ,  H01L21/2026 ,  H01L29/66757 ,  H01L29/78675

摘要： A method of manufacturing a semiconductor thin film includes (A) forming an amorphous semiconductor film on a substrate, (B) irradiating a beam to a surface of the amorphous semiconductor film such that a predetermined region of the amorphous semiconductor film is melted and solidified to form a crystallized semiconductor film, and (C) scanning the beam in a first direction. A second direction is a direction on the surface of the amorphous semiconductor film perpendicular to the first direction. A length along the second direction of a cross section of the beam is substantially equal to or less than two times a width along the second direction of the crystallized semiconductor film.

摘要翻译： 制造半导体薄膜的方法包括：（A）在基板上形成非晶半导体膜，（B）向非晶半导体膜的表面照射光束使得非晶半导体膜的规定区域熔融固化为 形成结晶半导体膜，（C）沿第一方向扫描光束。 第二方向是在垂直于第一方向的非晶半导体膜的表面上的方向。 沿着梁的横截面的第二方向的长度基本上等于或小于沿着结晶的半导体膜的第二方向的宽度的两倍。

公开(公告)号：US20120286265A1

公开(公告)日：2012-11-15

申请号：US13521726

申请日：2011-02-01

申请人： Kazushige Takechi ,  Mitsuru Nakata

发明人： Kazushige Takechi ,  Mitsuru Nakata

IPC分类号： H01L29/22 ,  H01L21/368 ,  C23C14/34

CPC分类号： C23C14/086 ,  H01L21/02422 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/02628 ,  H01L21/02631 ,  H01L29/66969 ,  H01L29/78693

摘要： A thin film transistor using an amorphous oxide thin film for an active layer, wherein: the amorphous oxide thin film includes, as main components, indium (In), oxygen (O), and a metal element (M) selected from the group consisting of silicon (Si), aluminum (Al), germanium (Ge), tantalum (Ta), magnesium (Mg) and titanium (Ti); an atomic ratio of M to In in this amorphous oxide thin film is 0.1 or more and 0.4 or less; and carrier density in the amorphous oxide thin film is 1×1015 cm−3 or more and 1×1019 cm−1 or less.

摘要翻译： 1.一种使用有源层的非晶氧化物薄膜的薄膜晶体管，其特征在于，所述无定形氧化物薄膜以铟（In），氧（O）和金属元素（M）为主要成分， 的硅（Si），铝（Al），锗（Ge），钽（Ta），镁（Mg）和钛（Ti） 该无定形氧化物薄膜中的M与In的原子比为0.1以上且0.4以下; 无定形氧化物薄膜的载流子浓度为1×10 15 cm -3以上1×10 19 cm -1以下。

公开(公告)号：US20100190276A1

公开(公告)日：2010-07-29

申请号：US12753214

申请日：2010-04-02

申请人： Mitsuru Nakata ,  Hirofumi Shimamoto ,  Hiroshi Kanoh

发明人： Mitsuru Nakata ,  Hirofumi Shimamoto ,  Hiroshi Kanoh

IPC分类号： H01L21/66

CPC分类号： G01N21/8422 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296

摘要： A laser irradiation process includes: scanning a substrate with laser having a predetermined lasing frequency at different irradiation intensities to form a plurality of first irradiation areas corresponding to the irradiation intensities; illuminating the first irradiation areas to reflected light receive from the first irradiation areas; determining microcrystallization intensity based on the received reflected light; and determining irradiation intensity based on the thus determined microcrystallization intensity. The laser irradiation process uses the irradiation intensity for irradiating a polycrystalline film in a product semiconductor device.

摘要翻译： 激光照射处理包括：以不同照射强度的具有预定的激光频率的激光扫描基板，以形成与照射强度对应的多个第一照射区域; 将第一照射区域照射到从第一照射区域接收的反射光; 基于所接收的反射光确定微结晶强度; 并根据如此确定的微结晶强度确定照射强度。 激光照射方法使用照射强度来照射产品半导体器件中的多晶膜。

公开(公告)号：US07579222B2

公开(公告)日：2009-08-25

申请号：US11503286

申请日：2006-08-14

申请人： Mitsuru Nakata ,  Kazushige Takechi ,  Hiroshi Kanoh

发明人： Mitsuru Nakata ,  Kazushige Takechi ,  Hiroshi Kanoh

IPC分类号： H01L21/00

CPC分类号： H01L27/1266 ,  H01L21/76256 ,  H01L27/1214 ,  H01L29/66757 ,  H01L2221/6835 ,  H01L2221/68363

摘要： Method of manufacturing a thin film device substrate wherein no trench fabrication is required to be applied onto the substrate surface, and a material which is impervious to light can be used, and the substrate can be peeled off quickly. Firstly, a peeling-off film, a silicon oxide film and an amorphous silicon film are formed in succession on a glass substrate, and the amorphous silicon film is irradiated from above to obtain a polycrystalline silicon film. Subsequently, using the polycrystalline silicon film as an active layer, a TFT is formed, and then a plastic substrate is bonded thereon, and finally the glass substrate is peeled off with the peeling-off film, to complete transfer of the TFT. Because the peeling-off film has a gap space, its etching rate is high. Therefore, it is unnecessary to form a trench for supplying an etchant on the surface of the glass substrate.

摘要翻译： 可以使用不需要在基板表面上施加沟槽加工的​​薄膜器件基板的制造方法，并且可以使用不透光的材料，并且可以快速地剥离基板。 首先，在玻璃基板上依次形成剥离膜，氧化硅膜和非晶硅膜，从上方照射非晶硅膜，得到多晶硅膜。 随后，使用多晶硅膜作为有源层，形成TFT，然后将塑料基板接合在其上，最后用剥离膜剥离玻璃基板，完成TFT的转印。 由于剥离膜具有间隙空间，因此其蚀刻速率高。 因此，不需要在玻璃基板的表面上形成用于供给蚀刻剂的沟槽。

公开(公告)号：US20100176398A1

公开(公告)日：2010-07-15

申请号：US12749063

申请日：2010-03-29

申请人： Kazushige Takechi ,  Hiroshi Kanou ,  Mitsuru Nakata

发明人： Kazushige Takechi ,  Hiroshi Kanou ,  Mitsuru Nakata

IPC分类号： H01L29/66

CPC分类号： G02F1/13454 ,  G02F1/133382 ,  H01L27/12

摘要： An electronic device of the present invention includes a first substrate provided with a thin film active element, having a thickness of 200 μm or lower, and a second substrate formed with a high thermal conductivity portion. The second substrate is applied to one surface of the two surfaces of the first substrate, i.e., the surface being the side other than the side that formed with the thin film active element. The thin film active element has a maximum power consumption of 0.01 to 1 mW. The high thermal conductivity portion is a region that corresponds to the position of the thin film active element and whose thermal conductivity falls within the range from 0.1 to 4 W/cm·deg.

摘要翻译： 本发明的电子器件包括具有厚度为200μm以下的薄膜有源元件的第一基板和形成有高导热率部分的第二基板。 将第二基板施加到第一基板的两个表面的一个表面，即除了用薄膜有源元件形成的侧面以外的表面。 薄膜有源元件的最大功耗为0.01至1mW。 高导热率部分是与薄膜有源元件的位置对应的区域，其导热率在0.1〜4W / cm·℃的范围内。

公开(公告)号：US20050221569A1

公开(公告)日：2005-10-06

申请号：US11094570

申请日：2005-03-31

申请人： Mitsuru Nakata

发明人： Mitsuru Nakata

IPC分类号： G02F1/136 ,  H01L21/027 ,  H01L21/20 ,  H01L21/336 ,  H01L21/84 ,  H01L29/786

CPC分类号： H01L29/78675 ,  H01L29/66757 ,  Y10S117/904 ,  Y10S438/942

摘要： A manufacturing method of a semiconductor thin film decreases the number of and controls the direction of crystal grain boundaries. A first beam irradiated onto amorphous silicon produces a radial temperature gradient centered on a tip of a concave. This forms a crystal grain in the concave tip, which grows in both the beam width and length direction. After the second beam and on, growth is repeated using the crystal grain formed in the tip of the concave as the seed. This forms a band-form crystal grain with a wider than that of the conventional narrow-line beam, with the tip of the concave being the start point. Further, by setting the periphery of the concave pattern to be equal or less than the crystal grain diameter in the direction vertical to the beam scanning direction, it is possible to form the band-form crystal grain being lined continuously.

摘要翻译： 半导体薄膜的制造方法减少并控制晶界的方向。 照射到非晶硅上的第一束产生以凹陷的尖端为中心的径向温度梯度。 这在凹形尖端中形成晶粒，其在波束宽度和长度方向上都生长。 在第二光束接通之后，使用形成在凹面的尖端中的晶粒作为种子重复生长。 这形成了比常规窄线束宽的带状晶粒，其中凹部的尖端为起始点。 此外，通过将凹形图案的周边设置成等于或小于垂直于光束扫描方向的方向的晶粒直径，可以形成连续排列的带状晶粒。

公开(公告)号：US20050095755A1

公开(公告)日：2005-05-05

申请号：US10976846

申请日：2004-11-01

申请人： Mitsuru Nakata ,  Kazushige Takechi ,  Hiroshi Kanoh

发明人： Mitsuru Nakata ,  Kazushige Takechi ,  Hiroshi Kanoh

IPC分类号： H01L21/20 ,  H01L21/02 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L21/00

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L29/66757 ,  H01L2221/6835 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2221/68368

摘要： An object of the present invention is to prevent the thin film device formed by laser annealing from making, due to overheat, abnormal operations. Firstly, on a glass substrate 101. a heat insulating film, a silicon oxide film and an amorphous silicon film are formed in succession, and the amorphous silicon film is irradiated from above with a laser beam of an excimer laser. After being molten, the amorphous silicon film undergoes recrystallization to form a polycrystalline silicon film. Subsequently, using the polycrystalline silicon film as an active layer, a TFT is formed, and then a plastic substrate is bonded onto the TFT, and finally the glass substrate is peeled off by way of the heat insulating film, whereby a transfer of the TFT is completed. Because the heat insulating film is removed, abnormality caused by overheat at the time of operation is well prevented from occurring.

摘要翻译： 本发明的目的在于防止由于过热引起的激光退火所形成的薄膜器件的异常操作。 首先，在玻璃基板101上。 依次形成绝热膜，氧化硅膜和非晶硅膜，用准分子激光的激光从上方照射非晶硅膜。 熔融后，非晶硅膜经过重结晶，形成多晶硅膜。 随后，使用多晶硅膜作为有源层，形成TFT，然后将塑料基板接合到TFT上，最后通过绝热膜剥离玻璃基板，由此TFT的转印 完成了。 由于去除绝热膜，因此能够良好地防止在运转时由过热导致的异常。

公开(公告)号：US08889480B2

公开(公告)日：2014-11-18

申请号：US13837879

申请日：2013-03-15

申请人： Kazushige Takechi ,  Mitsuru Nakata

发明人： Kazushige Takechi ,  Mitsuru Nakata

IPC分类号： H01L21/00 ,  H01L29/786 ,  H01L29/49 ,  H01L29/66

CPC分类号： H01L21/02694 ,  H01L21/02554 ,  H01L21/02587 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

摘要： A method of forming a thin-film device includes forming an oxide-semiconductor film formed on the first electrical insulator, and forming a second electrical insulator formed on the oxide-semiconductor film, the oxide-semiconductor film defining an active layer. The oxide-semiconductor film is comprised of a first interface layer located at an interface with the first electrical insulating insulator, a second interface layer located at an interface with the second electrical insulator, and a bulk layer other than the first and second interface layers. The method further includes oxidizing the oxide-semiconductor film to render a density of oxygen holes in at least one of the first and second interlayer layers is smaller than a density of oxygen holes in the bulk layer.

摘要翻译： 形成薄膜器件的方法包括形成形成在第一电绝缘体上的氧化物半导体膜，以及形成在氧化物半导体膜上形成的第二电绝缘体，所述氧化物半导体膜限定有源层。 氧化物半导体膜由位于与第一电绝缘绝缘体的界面处的第一界面层，位于与第二电绝缘体的界面处的第二界面层以及不同于第一界面层和第二界面层的体层组成。 该方法还包括氧化氧化物半导体膜以使第一和第二层间层中的至少一个中的氧空穴的密度小于本体层中的氧空穴的密度。