公开(公告)号：US4207494A

公开(公告)日：1980-06-10

申请号：US889119

申请日：1978-03-22

申请人： Fujio Hatakenaka ,  Hisaaki Sato ,  Isamu Tsuchiya ,  Shigemoto Murata ,  Yoji Morishita

发明人： Fujio Hatakenaka ,  Hisaaki Sato ,  Isamu Tsuchiya ,  Shigemoto Murata ,  Yoji Morishita

IPC分类号： H01J23/027 ,  H01J23/087 ,  H01J23/08

CPC分类号： H01J23/087

摘要： In a microwave tube of the type wherein an electron beam emitted by an electron gun is focused and caused to interact with an input high frequency wave at a high frequency circuit unit by magnetic flux generated by a permanent magnet type magnetic circuit, and the electron beam after the interaction is collected by a hollow cylindrical collector, a leakage flux generating means is provided near the entrance of the collector for generating leakage flux acting upon the electron beam. The leakage flux is produced by providing a notch for a pole piece adjacent to the collector and connected to the high frequency circuit unit or by reducing the cross-sectional area of the pole piece for magnetically saturating the pole piece itself or by keeping the pole piece in contact only with a portion of one end of the permanent magnet.

摘要翻译： 在由电子枪发射的电子束聚焦并通过由永久磁铁型磁路产生的磁通在高频电路单元与输入高频波相互作用的微波管中，并且电子束 在通过中空圆柱形收集器收集相互作用之后，在集电体的入口附近提供泄漏通量产生装置，用于产生作用在电子束上的漏磁通。 泄漏磁通是通过为与集电器相邻的极片提供凹口而连接到高频电路单元，或通过减小极片的横截面积来使极片本身磁饱和或通过保持极片 仅与永磁体的一端的一部分接触。

公开(公告)号：US20080053576A1

公开(公告)日：2008-03-06

申请号：US11977537

申请日：2007-10-24

申请人： Yoshihisa Takada ,  Masayoshi Suehiro ,  Masao Kurosaki ,  Hidekuni Murakami ,  Hiroyasu Fujii ,  Haruhiko Eguchi ,  Hisaaki Sato

发明人： Yoshihisa Takada ,  Masayoshi Suehiro ,  Masao Kurosaki ,  Hidekuni Murakami ,  Hiroyasu Fujii ,  Haruhiko Eguchi ,  Hisaaki Sato

IPC分类号： C23C2/28

CPC分类号： C22C38/02 ,  C21D1/185 ,  C21D1/74 ,  C21D8/0273 ,  C21D8/0278 ,  C21D9/46 ,  C22C38/008 ,  C22C38/04 ,  C22C38/06 ,  C22C38/08 ,  C22C38/12 ,  C22C38/16 ,  C23C2/02 ,  C23C2/40 ,  Y10T29/301 ,  Y10T428/12799 ,  Y10T428/12951

摘要： The present invention stably provides a high-strength hot-dip galvanized steel sheet having a high tensile strength and no non-plated portions and being excellent in workability and surface properties even when the employed equipment has only a reduction annealing furnace and a steel sheet containing relatively large amounts of Si, Mn and Al that are regarded as likely to cause non-plated portions is used as the substrate. The present invention: secures good plating performance even when the steel sheet contains Si, Mn and Al by adding Ni to a steel sheet, thus forming oxides at some portions in the steel sheet surface layer, and resultantly suppressing the surface incrassation of Si, Mn and Al at the portions where oxides are not formed; enhances the effect of Ni and accelerates the formation of oxides by further adding Mo, Cu and Sn; and moreover, in the case of a TRIP steel sheet, secures austenite by determining the ranges of Si and Al strictly, avoiding the deterioration of plating performance caused by the addition of Ni, and further adding Mo in a balanced manner. In addition, the present invention, in a TRIP steel sheet, improves press formability by regulating a retained austenite ratio and accelerates the formation of oxides by regulating a hydrogen concentration and a dew point in annealing before plating.

摘要翻译： 本发明稳定地提供了具有高拉伸强度和无镀层部分的高强度热浸镀锌钢板，并且即使所用设备仅具有还原退火炉和含有 被认为可能引起非电镀部分的相对大量的Si，Mn和Al被用作衬底。 本发明：即使在钢板中含有Si，Mn和Al的钢板中也添加了Ni，从而在钢板表面层的某些部分形成氧化物，也可以确保良好的镀层性，从而抑制Si，Mn 和Al在不形成氧化物的部分; 通过进一步添加Mo，Cu和Sn，增强Ni的作用并加速氧化物的形成; 此外，在TRIP钢板的情况下，通过严格地确定Si和Al的范围来确保奥氏体，避免由于添加Ni而引起的电镀性能的劣化，并且进一步以平衡的方式添加Mo。 此外，本发明在TRIP钢板中，通过调节残留奥氏体比例，通过调节镀层前退火时的氢浓度和露点来促进氧化物的形成，提高冲压成形性。

公开(公告)号：US6043608A

公开(公告)日：2000-03-28

申请号：US962390

申请日：1997-10-31

申请人： Seiji Samukawa ,  Yukito Nakagawa ,  Hisaaki Sato ,  Tsutomu Tsukada ,  Kibatsu Shinohara ,  Yasuo Niimura

发明人： Seiji Samukawa ,  Yukito Nakagawa ,  Hisaaki Sato ,  Tsutomu Tsukada ,  Kibatsu Shinohara ,  Yasuo Niimura

IPC分类号： H05H1/46 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H05B37/00

CPC分类号： H01J37/32082

摘要： This invention discloses a plasma processing apparatus for carrying out a process onto a substrate utilizing a plasma generated by supplying RF energy with a plasma generation gas. This apparatus comprises a vacuum chamber having a pumping system, a substrate holder for placing the substrate to be processed in the vacuum chamber, a gas introduction means for introducing the plasma generation gas into a plasma generation space, an energy supply means for supplying the RF energy with the plasma generation gas. The antenna has multiple antenna elements provided symmetrically to the center on the axis of the substrate and an end shorting member shorting each end of the antenna elements so that an RF current path symmetrical to the center is applied. Multiple circuits resonant at a frequency of the RF energy are formed symmetrically of the antenna elements and the end shorting member. Length obtained by adding total length of neighboring two of the antenna elements and length of the RF current path between ends of neighboring two of the antenna elements corresponds to one second of wavelength of the RF energy.

摘要翻译： 本发明公开了一种等离子体处理装置，其使用通过向等离子体发生气体提供RF能量而产生的等离子体，在基板上进行处理。 该设备包括具有泵送系统的真空室，用于将要处理的基板放置在真空室中的基板保持器，用于将等离子体产生气体引入等离子体产生空间的气体引入装置，用于提供RF 能量与等离子体产生气体。 天线具有对称地设置在基板的轴线上的中心的多个天线元件和端部短路构件，使天线元件的每一端短路，从而施加与中心对称的RF电流路径。 在RF能量的频率处共振的多个电路对称地形成在天线元件和端部短路部件上。 通过相邻两个天线元件的总长度相加而获得的长度和相邻两个天线元件的端部之间的RF电流路径的长度对应于RF能量的波长的一秒。

公开(公告)号：US5961776A

公开(公告)日：1999-10-05

申请号：US972945

申请日：1997-11-19

申请人： Hisaaki Sato ,  Yukito Nakagawa ,  Ken-ichi Takagi ,  Tomoaki Koide ,  Tsutomu Tsukada

发明人： Hisaaki Sato ,  Yukito Nakagawa ,  Ken-ichi Takagi ,  Tomoaki Koide ,  Tsutomu Tsukada

IPC分类号： H01J37/32 ,  H05H1/00

CPC分类号： H01J37/32192

摘要： A surface processing apparatus includes a microwave generator which generates low UHF band microwaves of from 300 MHz to 1 GHz, a cavity resonator in which the microwaves generated in the microwave generator resonate in the TM 010 mode, an airtight process chamber which is connected to the cavity resonator, a radiation plate which is arranged in a part of the cavity resonator which is connected with the process chamber, the radiation plate has a plurality of radiation holes which are established symmetrically with respect to a central axis of the cavity resonator, and cover plates made of a dielectric material which close off the radiation holes in an airtight manner.

摘要翻译： 表面处理装置包括：微波发生器，其生成从300MHz到1GHz的低UHF波段微波;微波发生器中产生的微波以TM 010模式谐振的空腔谐振器;连接到 空腔谐振器，布置在与处理室连接的空腔谐振器的一部分中的辐射板，辐射板具有相对于空腔谐振器的中心轴对称地建立的多个辐射孔，盖 由绝缘材料制成的板，其以气密方式封闭辐射孔。