公开(公告)号：US20160336154A1

公开(公告)日：2016-11-17

申请号：US15057158

申请日：2016-03-01

Applicant: Hitachi High-Technologies Corporation

Inventor： Seiichi WATANABE ,  Satomi INOUE ,  Shigeru NAKAMOTO ,  Kousuke FUKUCHI

IPC: H01J37/32 ,  G06F17/18 ,  G06F17/11 ,  H01L21/67

CPC classification number: H01J37/32972 ,  H01J37/32192 ,  H01J37/32926 ,  H01J37/3299

Abstract: According to an embodiment of the present invention, a plasma processing apparatus includes: a processing chamber in which plasma processing is performed to a sample; a radio frequency power source that supplies radio frequency power for generating plasma in the processing chamber; and a data processing apparatus that performs processing to light emission data of the plasma. The data processing apparatus performs the processing to the light emission by using an adaptive double exponential smoothing method for varying a smoothing parameter based on an error between input data and a predicted value of smoothed data. A response coefficient of the smoothing parameter is derived by a probability density function including the error as a parameter.

Abstract translation: 根据本发明的实施例，等离子体处理装置包括：对样品进行等离子体处理的处理室; 射频电源，其在处理室中提供用于产生等离子体的射频功率; 以及对等离子体的发光数据进行处理的数据处理装置。 数据处理装置通过使用自适应双指数平滑方法，根据输入数据和平滑数据的预测值之间的误差来改变平滑参数，对发光进行处理。 平滑参数的响应系数通过包含误差作为参数的概率密度函数导出。

公开(公告)号：US20150154145A1

公开(公告)日：2015-06-04

申请号：US14447692

申请日：2014-07-31

Applicant: Hitachi High-Technologies Corporation

Inventor： Seiichi WATANABE ,  Satomi INOUE ,  Shigeru NAKAMOTO ,  Kousuke FUKUCHI

IPC: G06F17/10

CPC classification number: G06F17/18 ,  H01J37/32963 ,  H01L22/26

Abstract: The present invention is a data processing apparatus including a data input/output device for receiving data, a storage for storing the data received by the data input/output device, a data processing program storage for storing a data processing program that includes the steps of calculating, using a double exponential smoothing method, a first predicted value that is a predicted value of smoothed data and a second predicted value that is a predicted value of the gradient of the smoothed data, and calculating, using a double exponential smoothing method in which the second predicted value is set as input data, a third predicted value that is a predicted value of smoothed data and a fourth predicted value that is a predicted value of the gradient of the smoothed data, and a data calculation processing apparatus for performing the data processing under the data processing program.

Abstract translation: 本发明是一种数据处理装置，包括用于接收数据的数据输入/输出装置，用于存储由数据输入/输出装置接收的数据的存储器，用于存储数据处理程序的数据处理程序存储装置，该数据处理程序包括以下步骤： 使用双指数平滑方法计算作为平滑数据的预测值的第一预测值和作为平滑数据的梯度的预测值的第二预测值，并且使用双指数平滑方法来计算其中 第二预测值被设置为输入数据，作为平滑数据的预测值的第三预测值和作为平滑数据的梯度的预测值的第四预测值，以及用于执行数据的数据计算处理装置 在数据处理程序下进行处理。

公开(公告)号：US20140295583A1

公开(公告)日：2014-10-02

申请号：US14014557

申请日：2013-08-30

Applicant: Hitachi-High-Technologies Corporation

Inventor： Shigeru NAKAMOTO ,  Tatehito USUI ,  Satomi INOUE ,  Kousa HIROTA ,  Kousuke FUKUCHI

IPC: H01L21/66

CPC classification number: H01L22/12 ,  G01B11/0616 ,  G01B11/0683 ,  H01J37/32963 ,  H01J37/32972 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a plasma processing method and apparatus for processing a film to be processed contained in a film structure preliminarily formed on an upper surface of a wafer mounted in a processing chamber, by using plasma, a residual film thickness at an arbitrary time is calculated using a result of comparing detective differential waveform pattern data with actual differential waveform pattern data. The detective differential waveform pattern data is produced by using two basic differential waveform pattern data which respectively use, as parameters, residual thicknesses of the films to be processed in film structures having underlying films with different thicknesses and the wavelengths of the interference light. The detective waveform pattern data being preliminarily prepared prior to processing of the wafer. Determination is made as to whether or not an object of the processing has been reached by using the residual film thickness.

Abstract translation: 在通过使用等离子体预先形成在安装在处理室中的晶片的上表面上预先形成的膜结构中的处理被处理膜的等离子体处理方法和装置中，任意时间的残留膜厚度使用 比较检测差分波形模式数据与实际差分波形模式数据的结果。 通过使用分别使用具有不同厚度的底膜和干涉光的膜的膜结构中要处理的膜的残留厚度作为参数的两个基本差分波形图案数据来产生检测差分波形图案数据。 在处理晶片之前预先准备的检测波形图案数据。 通过使用剩余膜厚来确定是否达到了加工对象。