公开(公告)号：US20140220489A1

公开(公告)日：2014-08-07

申请号：US13792325

申请日：2013-03-11

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yutaka KOZUMA ,  Hiroaki OIZUMI ,  Naoki YASUI ,  Seiichi WATANABE

IPC: G03F7/004

CPC classification number: G03F7/405 ,  G03F7/40

Abstract: Long-period roughness in patterned resist is reduced in a manufacturing process of a sample such as a semiconductor device. A method for processing a sample to be processed, with patterned resist, in a sample processing apparatus includes: disposing the sample to be processed, with the patterned resist on the stage in the processing chamber; supplying silicon tetrachloride (SiCl4) or hydrobromide (HBr) into the processing chamber as processing gas; holding the pressure of the processing chamber in the range of 1 Pa to 10 KPa; exciting the processing gas by irradiating the vacuum ultraviolet light having a wavelength of 200 nm or less to the processing gas; reacting an element contained in the excited processing gas with the pattern resist of the sample, and curing the resist.

Abstract translation: 在诸如半导体器件的样品的制造过程中，图案化抗蚀剂中的长周期粗糙度降低。 一种用于在样品处理设备中处理具有图案化抗蚀剂的待处理样品的方法，包括：将经处理的样品与图案化的抗蚀剂一起设置在处理室中的台上; 将四氯化硅（SiCl 4）或氢溴酸盐（HBr）作为处理气体供应到处理室中; 将处理室的压力保持在1Pa至10KPa的范围内; 通过向处理气体照射波长为200nm以下的真空紫外线来激励处理气体; 将包含在激发的处理气体中的元素与样品的图案抗蚀剂反应，并使抗蚀剂固化。

公开(公告)号：US20160336154A1

公开(公告)日：2016-11-17

申请号：US15057158

申请日：2016-03-01

Applicant: Hitachi High-Technologies Corporation

Inventor： Seiichi WATANABE ,  Satomi INOUE ,  Shigeru NAKAMOTO ,  Kousuke FUKUCHI

IPC: H01J37/32 ,  G06F17/18 ,  G06F17/11 ,  H01L21/67

CPC classification number: H01J37/32972 ,  H01J37/32192 ,  H01J37/32926 ,  H01J37/3299

Abstract: According to an embodiment of the present invention, a plasma processing apparatus includes: a processing chamber in which plasma processing is performed to a sample; a radio frequency power source that supplies radio frequency power for generating plasma in the processing chamber; and a data processing apparatus that performs processing to light emission data of the plasma. The data processing apparatus performs the processing to the light emission by using an adaptive double exponential smoothing method for varying a smoothing parameter based on an error between input data and a predicted value of smoothed data. A response coefficient of the smoothing parameter is derived by a probability density function including the error as a parameter.

Abstract translation: 根据本发明的实施例，等离子体处理装置包括：对样品进行等离子体处理的处理室; 射频电源，其在处理室中提供用于产生等离子体的射频功率; 以及对等离子体的发光数据进行处理的数据处理装置。 数据处理装置通过使用自适应双指数平滑方法，根据输入数据和平滑数据的预测值之间的误差来改变平滑参数，对发光进行处理。 平滑参数的响应系数通过包含误差作为参数的概率密度函数导出。

公开(公告)号：US20150154145A1

公开(公告)日：2015-06-04

申请号：US14447692

申请日：2014-07-31

Applicant: Hitachi High-Technologies Corporation

Inventor： Seiichi WATANABE ,  Satomi INOUE ,  Shigeru NAKAMOTO ,  Kousuke FUKUCHI

IPC: G06F17/10

CPC classification number: G06F17/18 ,  H01J37/32963 ,  H01L22/26

Abstract: The present invention is a data processing apparatus including a data input/output device for receiving data, a storage for storing the data received by the data input/output device, a data processing program storage for storing a data processing program that includes the steps of calculating, using a double exponential smoothing method, a first predicted value that is a predicted value of smoothed data and a second predicted value that is a predicted value of the gradient of the smoothed data, and calculating, using a double exponential smoothing method in which the second predicted value is set as input data, a third predicted value that is a predicted value of smoothed data and a fourth predicted value that is a predicted value of the gradient of the smoothed data, and a data calculation processing apparatus for performing the data processing under the data processing program.

Abstract translation: 本发明是一种数据处理装置，包括用于接收数据的数据输入/输出装置，用于存储由数据输入/输出装置接收的数据的存储器，用于存储数据处理程序的数据处理程序存储装置，该数据处理程序包括以下步骤： 使用双指数平滑方法计算作为平滑数据的预测值的第一预测值和作为平滑数据的梯度的预测值的第二预测值，并且使用双指数平滑方法来计算其中 第二预测值被设置为输入数据，作为平滑数据的预测值的第三预测值和作为平滑数据的梯度的预测值的第四预测值，以及用于执行数据的数据计算处理装置 在数据处理程序下进行处理。