Method and structure for enhancing both nMOSFET and pMOSFET performance with a stressed film
    21.
    发明授权
    Method and structure for enhancing both nMOSFET and pMOSFET performance with a stressed film 有权
    用强调膜增强nMOSFET和pMOSFET性能的方法和结构

    公开(公告)号:US07326997B2

    公开(公告)日:2008-02-05

    申请号:US11561047

    申请日:2006-11-17

    IPC分类号: H01L27/01

    摘要: A structure and method for making includes adjacent pMOSFET and nMOSFET devices in which the gate stacks are each overlain by a stressing layer that provides compressive stress in the channel of the pMOSFET device and tensile stress in the channel of the nMOSFET device. One of the pMOSFET or nMOSFET device has a height shorter than that of the other adjacent device, and the shorter of the two devices is delineated by a discontinuity or opening in the stressing layer overlying the shorter device. In a preferred method for forming the devices a single stressing layer is formed over gate stacks having different heights to form a first type stress in the substrate under the gate stacks, and forming an opening in the stressing layer at a distance from the shorter gate stack so that a second type stress is formed under the shorter gate stack.

    摘要翻译: 用于制造的结构和方法包括相邻的pMOSFET和nMOSFET器件,其中栅极叠层各自被在pMOSFET器件的沟道中提供压应力的应力层和nMOSFET器件的沟道中的拉伸应力覆盖。 pMOSFET或nMOSFET器件中的一个具有比其他相邻器件的高度更短的高度,并且两个器件中的较短的器件通过覆盖较短器件的应力层的不连续或开口来描绘。 在用于形成器件的优选方法中,在具有不同高度的栅极堆叠上形成单个应力层,以在栅极堆叠下的衬底中形成第一类型应力,并且在距离较短栅极堆叠一定距离处的应力层中形成开口 使得在较短的栅极堆叠下形成第二种类型的应力。

    Method and structure for enhancing both nMOSFET and pMOSFET performance with a stressed film
    22.
    发明授权
    Method and structure for enhancing both nMOSFET and pMOSFET performance with a stressed film 有权
    用强调膜增强nMOSFET和pMOSFET性能的方法和结构

    公开(公告)号:US07476579B2

    公开(公告)日:2009-01-13

    申请号:US11560925

    申请日:2006-11-17

    IPC分类号: H01L21/336

    摘要: A structure and method for making includes adjacent PMOSFET and nMOSFET devices in which the gate stacks are each overlain by a stressing layer that provides compressive stress in the channel of the PMOSFET device and tensile stress in the channel of the nMOSFET device. One of the PMOSFET or nMOSFET device has a height shorter than that of the other adjacent device, and the shorter of the two devices is delineated by a discontinuity or opening in the stressing layer overlying the shorter device. In a preferred method for forming the devices a single stressing layer is formed over gate stacks having different heights to form a first type stress in the substrate under the gate stacks, and forming an opening in the stressing layer at a distance from the shorter gate stack so that a second type stress is formed under the shorter gate stack.

    摘要翻译: 用于制造的结构和方法包括相邻的PMOSFET和nMOSFET器件,其中栅极叠层各自被在PMOSFET器件的沟道中提供压应力的应力层和nMOSFET器件的沟道中的拉伸应力覆盖。 PMOSFET或nMOSFET器件中的一个具有比另一个器件更短的高度,并且两个器件中的较短的器件通过覆盖较短器件的应力层中的不连续或开口来描绘。 在用于形成器件的优选方法中,在具有不同高度的栅极堆叠上形成单个应力层,以在栅极堆叠下的衬底中形成第一类型应力,并且在距离较短栅极堆叠一定距离处的应力层中形成开口 使得在较短的栅极堆叠下形成第二种类型的应力。

    Dog cage
    23.
    外观设计
    Dog cage 有权

    公开(公告)号:USD1048575S1

    公开(公告)日:2024-10-22

    申请号:US29933443

    申请日:2024-03-20

    申请人: Jing Wang

    设计人: Jing Wang

    摘要: FIG. 1 is a front perspective view of embodiment 1, showing my new design;
    FIG. 2 is a rear perspective view thereof of embodiment 1;
    FIG. 3 is a front view thereof of embodiment 1;
    FIG. 4 is a rear view thereof of embodiment 1;
    FIG. 5 is a left side view thereof of embodiment 1;
    FIG. 6 is a right side view thereof of embodiment 1;
    FIG. 7 is a top view thereof of embodiment 1;
    FIG. 8 is a bottom view thereof of embodiment 1;
    FIG. 9 is a front perspective view of embodiment 2;
    FIG. 10 is a rear perspective view thereof of embodiment 2;
    FIG. 11 is a front view thereof of embodiment 2;
    FIG. 12 is a rear view thereof of embodiment 2;
    FIG. 13 is a left side view thereof of embodiment 2;
    FIG. 14 is a right side view thereof of embodiment 2;
    FIG. 15 is a top view thereof of embodiment 2;
    FIG. 16 is a bottom view thereof of embodiment 2;
    FIG. 17 is an enlarged detail view of area 17 in FIG. 1; and,
    FIG. 18 is an enlarged detail view of area 18 in FIG. 1.
    The broken lines in the drawings illustrate the portions of the dog cage, which form no part of the claimed design.
    The dash-dot-dash broken lines encircling the enlarged views are for annotative purposes only and form no part of the claim thereof.

    Rubik's cube male masturbator
    24.
    外观设计

    公开(公告)号:USD1017823S1

    公开(公告)日:2024-03-12

    申请号:US29878585

    申请日:2023-06-24

    申请人: Jing Wang

    设计人: Jing Wang

    摘要: FIG. 1 is a top perspective view of a rubik's cube male masturbator, showing my new design;
    FIG. 2 is a bottom perspective view thereof;
    FIG. 3 is a front view thereof;
    FIG. 4 is a rear view thereof;
    FIG. 5 is a left side view thereof;
    FIG. 6 is a right side view thereof;
    FIG. 7 is a top view thereof; and,
    FIG. 8 is a bottom view thereof.

    Lens Driving Device
    26.
    发明申请

    公开(公告)号:US20170192194A1

    公开(公告)日:2017-07-06

    申请号:US15256908

    申请日:2016-09-06

    申请人: Xudong Yan Jing Wang

    发明人: Xudong Yan Jing Wang

    IPC分类号: G02B7/02

    摘要: A lens driving device includes a housing with an accommodation space, a barrel accommodated in the housing, a coil wound around the barrel and a magnet fixed to the housing. The lens driving device further includes a spring piece at least partially made of amorphous alloy materials, and the spring piece support the described barrel to perform the to-and-fro motion along the axis. Comparing to the relevant technologies, the lens driving device has good performance and high reliability.

    System and method for TDD/TMA with hybrid bypass switch of receiving amplifier
    28.
    发明授权
    System and method for TDD/TMA with hybrid bypass switch of receiving amplifier 有权
    具有接收放大器混合旁路开关的TDD / TMA系统和方法

    公开(公告)号:US09559744B2

    公开(公告)日:2017-01-31

    申请号:US13633441

    申请日:2012-10-02

    申请人: Paul Carney Jing Wang

    发明人: Paul Carney Jing Wang

    摘要: Various embodiments disclosed herein relate to a circuit for connecting a transceiver input/output to an antenna, the circuit including one or more of the following: a transceiver port; an antenna port; a reception path disposed between the transceiver port and the antenna port; a first amplifier configured to amplify a signal on the reception path when the circuit is configured according to a normal operation mode; and a first hybrid coupler configured to establish a bypass path around the first amplifier when the circuit is configured according to a bypass operation mode.

    摘要翻译: 本文公开的各种实施例涉及用于将收发器输入/输出连接到天线的电路,该电路包括以下中的一个或多个:收发器端口; 天线端口; 设置在所述收发器端口和所述天线端口之间的接收路径; 第一放大器,被配置为当根据正常操作模式配置电路时放大接收路径上的信号; 以及第一混合耦合器,被配置为当根据旁路操作模式配置电路时,在第一放大器周围建立旁路路径。

    Method and apparatus for transmitting and receiving data
    29.
    发明授权
    Method and apparatus for transmitting and receiving data 有权
    用于发送和接收数据的方法和装置

    公开(公告)号:US09467537B2

    公开(公告)日:2016-10-11

    申请号:US14376785

    申请日:2012-03-23

    IPC分类号: H04L29/06 H04L29/08

    摘要: A method and apparatus for transmitting and receiving data are disclosed. The method for transmitting data, comprising encapsulating one or multiple media access control protocol data units (MPDU) as a group media access control protocol data unit (G-MPDU) based on a length of the group media access control protocol data unit G-MPDU; fragmenting a current MPDU according to a residual length to obtain a fragmented MPDU when the residual length is insufficient to encapsulate the current MPDU; encapsulating the fragmented MPDU to the G-MPDU; and transmitting the encapsulated G-MPDU. The method ensures a high data transmission rate and does not wasting excess time to execute the fragmentation processing. The method also ensures a high resource utilization rate, utilizing fully the remaining length of the data unit.

    摘要翻译: 公开了一种用于发送和接收数据的方法和装置。 用于发送数据的方法包括基于组媒体访问控制协议数据单元G-MPDU的长度将一个或多个媒体访问控制协议数据单元(MPDU)封装为组媒体访问控制协议数据单元(G-MPDU) ; 当剩余长度不足以封装当前MPDU时,根据剩余长度对当前MPDU进行分片以获得分段MPDU; 将分片MPDU封装到G-MPDU; 并发送封装的G-MPDU。 该方法确保了高数据传输速率,并且不浪费多余的时间来执行分片处理。 该方法还确保高资源利用率,充分利用数据单元的剩余长度。