公开(公告)号：US09812706B2

公开(公告)日：2017-11-07

申请号：US14140471

申请日：2013-12-25

Applicant: Industrial Technology Research Institute

Inventor： Jin-Bao Wu ,  Li-Duan Tsai ,  Jia-Jen Chang ,  Ming-Sheng Leu ,  Jenn-Yeu Hwang ,  Chun-Lung Li

IPC: H01M4/36 ,  H01M4/13 ,  H01M4/38 ,  H01M4/48 ,  H01M4/58 ,  H01M4/62 ,  H01M10/0525 ,  B82Y30/00 ,  H01M4/02

CPC classification number: H01M4/366 ,  B82Y30/00 ,  H01M4/13 ,  H01M4/38 ,  H01M4/382 ,  H01M4/483 ,  H01M4/581 ,  H01M4/624 ,  H01M4/625 ,  H01M10/0525 ,  H01M2004/021 ,  Y10S977/742 ,  Y10S977/948

Abstract: A protected active metal electrode and a device with the electrode are provided. The protected active metal electrode includes an active metal substrate and a protection layer on a surface of the active metal substrate. The protection layer at least includes a metal thin film covering the surface of the active metal substrate and an electrically-conductive thin film covering a surface of the metal thin film. A material of the metal thin film is Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, or W. A material of the electrically-conductive thin film is selected from nitride of a metal in the metal thin film, carbide of a metal in the metal thin film, a diamond-like carbon (DLC), and a combination thereof.

公开(公告)号：US09385291B2

公开(公告)日：2016-07-05

申请号：US14855403

申请日：2015-09-16

Applicant: Industrial Technology Research Institute

Inventor： Ming-Sheng Leu ,  Tai-Sheng Chen ,  Chih-Chao Shih

IPC: H01L35/10 ,  H01L35/18 ,  H01L35/16 ,  H01L35/22 ,  H01L35/14

CPC classification number: H01L35/10 ,  H01L35/14 ,  H01L35/16 ,  H01L35/18 ,  H01L35/22

Abstract: A structure of a thermoelectric film including a thermoelectric substrate and a pair of first diamond-like carbon (DLC) layers is provided. The first DLC layers are respectively located on two opposite surfaces of the thermoelectric substrate and have electrical conductivity.

公开(公告)号：US20140186716A1

公开(公告)日：2014-07-03

申请号：US14140471

申请日：2013-12-25

Applicant: Industrial Technology Research Institute

Inventor： Jin-Bao Wu ,  Li-Duan Tsai ,  Jia-Jen Chang ,  Ming-Sheng Leu ,  Jenn-Yeu Hwang ,  Chun-Lung Li

IPC: H01M4/36

CPC classification number: H01M4/366 ,  B82Y30/00 ,  H01M4/13 ,  H01M4/38 ,  H01M4/382 ,  H01M4/483 ,  H01M4/581 ,  H01M4/624 ,  H01M4/625 ,  H01M10/0525 ,  H01M2004/021 ,  Y10S977/742 ,  Y10S977/948

Abstract: A protected active metal electrode and a device with the electrode are provided. The protected active metal electrode includes an active metal substrate and a protection layer on a surface of the active metal substrate. The protection layer at least includes a metal thin film covering the surface of the active metal substrate and an electrically-conductive thin film covering a surface of the metal thin film. A material of the metal thin film is Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, or W. A material of the electrically-conductive thin film is selected from nitride of a metal in the metal thin film, carbide of a metal in the metal thin film, a diamond-like carbon (DLC), and a combination thereof.

Abstract translation: 提供保护的有源金属电极和具有电极的器件。 受保护的有源金属电极在活性金属基板的表面上包括有源金属基板和保护层。 保护层至少包括覆盖有源金属基板的表面的金属薄膜和覆盖金属薄膜表面的导电薄膜。 金属薄膜的材料是Ti，V，Cr，Zr，Nb，Mo，Hf，Ta或W.导电薄膜的材料选自金属薄膜中的金属的氮化物，碳化物 金属薄膜中的金属，类金刚石碳（DLC）及其组合。