公开(公告)号：US5368711A

公开(公告)日：1994-11-29

申请号：US57141

申请日：1993-04-29

申请人： Jaime Poris

发明人： Jaime Poris

IPC分类号： H01L21/288 ,  H01L21/768 ,  C25D5/02

CPC分类号： H01L21/76885 ,  H01L21/2885 ,  H01L21/76879

摘要： A process and apparatus for advanced semiconductor applications which involves the selective electrodeposition of metal on a semiconductor wafer is described. The present invention has significant economic and performance advantages over the current state of the art. It addresses problems associated with cleanliness (a major issue with sub-micron processing), metal thickness uniformity, step coverage and environmental concerns.A metal with better device performance capabilities compared to the standard aluminum is also employed. The hardware allows the selective deposition to occur without allowing the electrolyte to contact the rear of the wafer or the electrodes contacting the front wafer surface. A virtual anode improves the primary current distribution improving the thickness uniformity while allowing optimization of other film parameters with the remaining deposition variables. Using this process and the associated hardware, metal lines are selectively deposited with contacts or vias completely filled without the need for plasma etching the deposited metal.

摘要翻译： 描述了涉及在半导体晶片上选择性电沉积金属的先进半导体应用的工艺和装置。 本发明与现有技术相比具有显着的经济和性能优点。 它解决了与清洁度（亚微米加工的主要问题），金属厚度均匀性，台阶覆盖和环境问题相关的问题。 与标准铝相比，具有更好的器件性能的金属也被采用。 硬件允许选择性沉积发生，而不允许电解质接触晶片的后部或接触前晶片表面的电极。 虚拟阳极改善了初级电流分布，改善了厚度均匀性，同时允许利用剩余的沉积变量优化其它膜参数。 使用该工艺和相关的硬件，金属线选择性地沉积有完全填充的触点或通孔，而不需要等离子体蚀刻沉积的金属。

公开(公告)号：US5256274A

公开(公告)日：1993-10-26

申请号：US799734

申请日：1991-11-22

申请人： Jaime Poris

发明人： Jaime Poris

IPC分类号： H01L21/288 ,  H01L21/768 ,  C25D1/00

CPC分类号： H01L21/76885 ,  H01L21/2885

摘要： A process and apparatus for advanced semiconductor applications which involves the selective electrodeposition of metal on a semiconductor wafer is described. The present invention has significant economic and performance advantages over the current state of the art. It addresses problems associated with cleanliness (a major issue with sub-micron processing) , metal thickness uniformity, step coverage and environmental concerns.A metal with better device performance capabilities compared to the standard aluminum is also employed. The hardware allows the selective deposition to occur without allowing the electrolyte to contact the rear of the wafer or the electrodes contacting the front wafer surface. A virtual anode improves the primary current distribution improving the thickness uniformity while allowing optimization of other film parameters with the remaining deposition variables. Using this process and the associated hardware, metal lines are selectively deposited with contacts or vias completely filled without the need for plasma etching the deposited metal.

摘要翻译： 描述了涉及在半导体晶片上选择性电沉积金属的先进半导体应用的工艺和装置。 本发明与现有技术相比具有显着的经济和性能优点。 它解决了与清洁度（亚微米加工的主要问题），金属厚度均匀性，台阶覆盖和环境问题相关的问题。 与标准铝相比，具有更好的器件性能的金属也被采用。 硬件允许选择性沉积发生，而不允许电解质接触晶片的后部或接触前晶片表面的电极。 虚拟阳极改善了初级电流分布，改善了厚度均匀性，同时允许利用剩余的沉积变量优化其它膜参数。 使用该工艺和相关的硬件，金属线选择性地沉积有完全填充的触点或通孔，而不需要等离子体蚀刻沉积的金属。