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公开(公告)号:US20200091596A1
公开(公告)日:2020-03-19
申请号:US16543798
申请日:2019-08-19
Applicant: InnoLux Corporation
Inventor: Yi-Hung LIN , Chih-Chi CHEN , Tang-Chin HUNG , I-Yin LI
IPC: H01Q1/36
Abstract: An antenna device is provided. The antenna device includes a first substrate, a first conductive layer, a second substrate, a liquid-crystal layer, a buffer layer, and an alignment layer. The first conductive layer is disposed on the first substrate, and the first conductive layer has an opening. The second substrate is disposed opposite to the first substrate. The second conductive layer is disposed on the second substrate. The liquid-crystal layer is disposed between the first conductive layer and the second conductive layer. The buffer layer is disposed in the opening and adjacent to an overlapping region of the first conductive layer and the second conductive layer. The alignment layer is disposed between the first conductive layer and the liquid-crystal layer.
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公开(公告)号:US20190013574A1
公开(公告)日:2019-01-10
申请号:US16026171
申请日:2018-07-03
Applicant: InnoLux Corporation
Inventor: I-Yin LI , Chin-Lung TING , Chia-Chi HO , Yi-Hung LIN
Abstract: A microwave device includes a first substrate having a first surface, a first metal layer, a second substrate having a second surface corresponding to the first substrate, a second metal layer, a sealing element, a modulation material, and a fill material. The first metal layer is disposed on the first surface, and the first metal layer includes openings. The second metal layer is disposed on the second surface. The second metal layer includes electrodes corresponding to the openings. The sealing element is located between the first substrate and the second substrate. An active zone is formed by a space between the sealing element, the first substrate, and the second substrate. The modulation material is filled within the active area. The fill material is disposed in the active area. The thickness of the fill material is greater than 0.3 μm, and less than the thickness of the sealing element.
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