公开(公告)号：US20210202479A1

公开(公告)日：2021-07-01

申请号：US16727355

申请日：2019-12-26

Applicant: Intel Corporation

Inventor： Sudipto NASKAR ,  Biswajeet GUHA ,  William HSU ,  Bruce BEATTIE ,  Tahir GHANI

IPC: H01L27/088 ,  H01L21/8234 ,  H01L21/02 ,  H01L29/78 ,  H01L29/66 ,  H01L29/06 ,  H01L29/08

Abstract: Gate-all-around integrated circuit structures fabricated using alternate etch selective material, and the resulting structures, are described. For example, an integrated circuit structure includes a vertical arrangement of horizontal nanowires. A gate stack is over the vertical arrangement of horizontal nanowires. A pair of dielectric spacers is along sides of the gate stack and over the vertical arrangement of horizontal nanowires. A metal oxide material is between adjacent ones of the vertical arrangement of horizontal nanowires at a location between the pair of dielectric spacers and the sides of the gate stack.