公开(公告)号：US6103635A

公开(公告)日：2000-08-15

申请号：US959197

申请日：1997-10-28

申请人： Duc Q Chau ,  Brian Sze-Ki Mo ,  Teina L. Pardue

发明人： Duc Q Chau ,  Brian Sze-Ki Mo ,  Teina L. Pardue

IPC分类号： H01L21/3065 ,  H01L21/762 ,  H01L21/76

CPC分类号： H01L21/76224 ,  H01L21/3065

摘要： A process for forming a trench in a semiconductor material is provided. The process includes (a) providing a semiconductor substrate, a first mask layer adjacent the surface of the semiconductor substrate, and a second mask layer adjacent the surface of the first mask layer, the second mask layer defining a first open area and the first mask layer defining a second open area that is larger than the first open area and aligned therewith in a manner so that in the area of the openings the first mask layer is undercut with respect to the second mask layer; and (b) removing a portion of the semiconductor substrate through the open area defined by the second mask layer to form a trench in said semiconductor substrate. An IC device formed using the process is also provided.

摘要翻译： 提供了一种在半导体材料中形成沟槽的工艺。 该方法包括（a）提供半导体衬底，邻近半导体衬底的表面的第一掩模层和与第一掩模层的表面相邻的第二掩模层，第二掩模层限定第一开放区域和第一掩模 层限定第二开放区域，该第二开放区域大于第一开放区域并且以使得在开口区域中的第一掩模层相对于第二掩模层被切削的方式对齐; 和（b）通过由第二掩模层限定的开放区域去除半导体衬底的一部分，以在所述半导体衬底中形成沟槽。 还提供了使用该方法形成的IC器件。

公开(公告)号：US06583010B2

公开(公告)日：2003-06-24

申请号：US09839523

申请日：2001-04-20

申请人： Brian Sze-Ki Mo

发明人： Brian Sze-Ki Mo

IPC分类号： H01L21336

CPC分类号： H01L29/7813 ,  H01L21/26586 ,  H01L29/0847

摘要： A trench field-effect transistor with a self-aligned source. At least a portion of the source implantation dose (604) is implanted underneath the gate (610) of a trench transistor by implanting an a non-orthogonal angle to the sidewall (608) of the trench. In one embodiment, a slow diffuser, such as arsenic, is implanted to minimize the post-implant diffusion. The resulting structure ensures gate-source overlap, and a consistent, small, gate-source capacitance with a lower thermal budget for the resultant device. The narrow depth of the source, in conjunction with its unique L-shape, improves device ruggedness because the source doping does not compensate the heavy body doping as much as with conventional devices. In one embodiment, the substrate is rotated 90 degrees within the implanter to implant both sidewalls of a trench.

摘要翻译： 具有自对准源的沟道场效应晶体管。 通过以与沟槽的侧壁（608）非正交角度注入，将源植入剂量（604）的至少一部分植入在沟槽晶体管的栅极（610）的下方。 在一个实施例中，植入缓慢扩散器（例如砷）以使植入物后扩散最小化。 所得到的结构确保栅极源重叠，并且对于所得到的器件具有较低的热预算的一致的，小的栅源电容。 源的窄深度与其独特的L形结合，提高了器件的耐用性，因为源掺杂不像常规器件那样补偿重体掺杂。 在一个实施例中，衬底在注入机内旋转90度以注入沟槽的两个侧壁。