Top emission inverted organic light emitting diode display device having electrode patterns formed from a same material as a conductive pattern contacting the TFT
    21.
    发明授权
    Top emission inverted organic light emitting diode display device having electrode patterns formed from a same material as a conductive pattern contacting the TFT 有权
    具有由与TFT接触的导电图案相同材料形成的电极图案的顶部发射倒置有机发光二极管显示装置

    公开(公告)号:US08803172B2

    公开(公告)日:2014-08-12

    申请号:US12639414

    申请日:2009-12-16

    Abstract: A top emission inverted OLED device is disclosed. The a top emission inverted OLED device includes: first and second pad portions disposed on peripheral areas which correspond to outer sides of a light generation area on a metal substrate; at least one thin film transistor formed on the light generation area; a passivation layer formed to cover the thin film transistor on the metal substrate and include contact holes which partially expose the thin film transistor and the first and second pad portions; a stacked pattern of first and second conductive patterns formed on the passivation layer and configured to make contact with the exposed part of the thin film transistor through one of the contact holes; a cathode electrode formed on the light generation area and electrically connected to the second conductive pattern; an organic light emission layer disposed on the cathode electrode; an anode electrode disposed on the organic light emission layer and formed from a transparent metal material; and electrode patterns formed from the same material as the second conductive pattern on the rest of the contact holes which expose the first and second pad portions.

    Abstract translation: 公开了顶部发射反向OLED器件。 顶部发射反转OLED器件包括:第一和第二焊盘部分,设置在与金属基板上的发光区域的外侧对应的周边区域上; 形成在所述光产生区域上的至少一个薄膜晶体管; 形成为覆盖金属基板上的薄膜晶体管的钝化层,并且包括部分地暴露薄膜晶体管和第一和第二焊盘部分的接触孔; 形成在所述钝化层上并被配置为通过所述接触孔中的一个接触所述薄膜晶体管的所述暴露部分的第一和第二导电图案的堆叠图案; 阴极,形成在所述光生成区域上并电连接到所述第二导电图案; 设置在阴极上的有机发光层; 设置在有机发光层上并由透明金属材料形成的阳极电极; 以及由暴露第一和第二焊盘部分的其余接触孔上与第二导电图案相同的材料形成的电极图案。

    Method of fabricating a liquid crystal display device
    22.
    发明授权
    Method of fabricating a liquid crystal display device 有权
    制造液晶显示装置的方法

    公开(公告)号:US08018545B2

    公开(公告)日:2011-09-13

    申请号:US11168455

    申请日:2005-06-29

    CPC classification number: G02F1/1368 G02F1/136227 G02F2001/136231

    Abstract: A method for fabricating an LCD device including: providing first and second substrates; forming an active area having a source region, a drain region, and a channel region on the first substrate and a storage line having a first region and a second region; forming a first insulation film on the first substrate; forming a gate electrode and a gate line, and forming a pixel electrode overlapping with the first region of the storage line on the first substrate; forming a second insulation film on the first substrate; forming a contact hole exposing a portion of the source and drain regions by removing the first and second insulation films and exposing the pixel electrode by removing the second insulation film on the pixel electrode; and forming a source electrode electrically connected to the source region and a drain electrode electrically connected to the drain region through the contact hole.

    Abstract translation: 一种用于制造LCD装置的方法,包括:提供第一和第二基板; 在所述第一基板上形成具有源极区域,漏极区域和沟道区域的有源区域以及具有第一区域和第二区域的存储线路; 在所述第一基板上形成第一绝缘膜; 形成栅电极和栅极线,并且在所述第一基板上形成与所述存储线的所述第一区重叠的像素电极; 在所述第一基板上形成第二绝缘膜; 通过去除所述第一绝缘膜和所述第二绝缘膜并且通过去除所述像素电极上的所述第二绝缘膜来暴露所述像素电极而形成暴露所述源极和漏极区的一部分的接触孔; 以及通过所述接触孔形成与所述源极区域电连接的源电极和与所述漏极区域电连接的漏极电极。

    Analog buffer and driving method thereof, liquid crystal display apparatus using the same and driving method thereof
    23.
    发明授权
    Analog buffer and driving method thereof, liquid crystal display apparatus using the same and driving method thereof 有权
    模拟缓冲器及其驱动方法,使用其的液晶显示装置及其驱动方法

    公开(公告)号:US07436385B2

    公开(公告)日:2008-10-14

    申请号:US10879346

    申请日:2004-06-30

    CPC classification number: G09G3/3688 G09G3/3655 G09G2310/027

    Abstract: An analog buffer for buffering an input voltage to an output line is provided. The analog buffer includes a constant current source and a comparator. The constant current source supplies a constant current to the output line, and the comparator compares a voltage charged on the output line with the input voltage to turn-off the constant current source if it is determined that the voltage charged on the output line corresponding to the input voltage is buffered to the output line.

    Abstract translation: 提供了用于将输入电压缓冲到输出线的模拟缓冲器。 模拟缓冲器包括恒流源和比较器。 恒定电流源向输出线提供恒定电流,并且比较器将输出线上充电的电压与输入电压进行比较,如果确定在对应于输出线的输出线上充电的电压 输入电压被缓冲到输出线。

    Liquid crystal display device with prevention of defective disconnection of drain/pixel electrodes by forming two conductive layers on top of entire pixel electrode and then removing a portion of both therefrom
    24.
    发明授权
    Liquid crystal display device with prevention of defective disconnection of drain/pixel electrodes by forming two conductive layers on top of entire pixel electrode and then removing a portion of both therefrom 有权
    液晶显示装置,通过在整个像素电极的顶部形成两个导电层,然后除去其中的一部分,从而防止漏极/像素电极的不良断开

    公开(公告)号:US07414691B2

    公开(公告)日:2008-08-19

    申请号:US11153480

    申请日:2005-06-16

    Abstract: A method for fabricating an LCD device includes providing first and second substrates and has a contact hole exposing a portion of the source and drain regions formed by removing a portion of the first and second insulation layers and removing the second insulation layer of the upper portion of the pixel electrode. The method also includes forming a third conductive layer on the first substrate; forming source and drain electrodes electrically connected to the source and drain regions through the contact hole by patterning the third conductive layer and exposing the second conductive layer of the upper portion of the pixel electrode; and forming a liquid crystal layer between the first and second substrates.

    Abstract translation: 一种用于制造LCD器件的方法,包括:提供第一和第二衬底,并具有暴露出源区和漏区的一部分的接触孔,该部分通过去除第一和第二绝缘层的一部分而形成,并且去除上部的第二绝缘层 像素电极。 该方法还包括在第一衬底上形成第三导电层; 通过图案化所述第三导电层并暴露所述像素电极的上部的第二导电层,形成通过所述接触孔电连接到所述源极和漏极区的源极和漏极; 以及在所述第一和第二基板之间形成液晶层。

    Active matrix organic luminescence display device and manufacturing method for the same
    25.
    发明申请
    Active matrix organic luminescence display device and manufacturing method for the same 有权
    有源矩阵有机发光显示装置及其制造方法相同

    公开(公告)号:US20070202625A1

    公开(公告)日:2007-08-30

    申请号:US11789503

    申请日:2007-04-25

    CPC classification number: H01L27/3265 H01L27/1255 H01L27/3258

    Abstract: An active matrix organic electro luminescent display (ELD) device comprises a substrate, first and second active layers formed of polycrystalline silicon on the substrate, first source and drain regions and second source and drain regions, the first source and drain regions neighboring the first active layer and the second source and drain regions neighboring the second active layer, a gate insulating layer on the first and second active layers, first and second gate electrodes on the gate insulating layer, a first inter layer on the first and second gate electrodes, an anode electrode and a capacitor electrode on the first inter layer, a first passivation layer on the anode electrode and the capacitor electrode, a power line on the first passivation layer, first source and drain electrodes on the first passivation layer, the first source electrode being connected to the first source region and the first drain electrode being connected to the first drain region, second source and drain electrodes on the first passivation layer, the second source electrode being connected to the second source region, the power line and the capacitor electrode and the second drain electrode being connected to the second drain region and the anode electrode, and a second passivation layer on the first source and drain electrodes and the second source and drain electrodes, the second passivation layer having a bank that exposes the anode electrode.

    Abstract translation: 有源矩阵有机电致发光显示器(ELD)器件包括衬底,在衬底上由多晶硅形成的第一和第二有源层,第一源极和漏极区域以及第二源极和漏极区域,第一源极和漏极区域与第一有源电致发光显示器 层和与第二有源层相邻的第二源极和漏极区,在第一和第二有源层上的栅极绝缘层,栅极绝缘层上的第一和第二栅极电极,第一和第二栅极上的第一层间, 阳极电极和第一层间的电容器电极,阳极电极和电容器电极上的第一钝化层,第一钝化层上的电力线,第一钝化层上的第一源极和漏极,第一源极为 连接到第一源极区域,并且第一漏极电极连接到第一漏极区域,第二源极和漏极 电极在第一钝化层上,第二源极连接到第二源极区,电源线和电容器电极以及第二漏极连接到第二漏区和阳极,以及第二钝化层 第一源极和漏极以及第二源极和漏极,第二钝化层具有露出阳极电极的堤。

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