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21.
公开(公告)号:US20220148816A1
公开(公告)日:2022-05-12
申请号:US17357441
申请日:2021-06-24
Applicant: KEMET Electronics Corporation
Inventor: Yaru Shi , Antony P. Chacko , Ajaykumar Bunha , Qingping Chen , Elisabeth Crittendon Key
Abstract: Provided is an improved capacitor formed by a process comprising: providing an anode comprising a dielectric thereon wherein the anode comprises a sintered powder wherein the powder has a powder charge of at least 45,000 μFV/g; and forming a first conductive polymer layer encasing at least a portion of the dielectric by applying a first slurry wherein the first slurry comprises a polyanion and a conductive polymer and wherein the polyanion and conductive polymer are in a weight ratio of greater than 3 wherein the conductive polymer and polyanion forms conductive particles with an average particle size of no more than 20 nm.
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公开(公告)号:US11101077B2
公开(公告)日:2021-08-24
申请号:US16940869
申请日:2020-07-28
Applicant: KEMET Electronics Corporation
Inventor: Ajaykumar Bunha , Antony P. Chacko , Yaru Shi , Qingping Chen , Philip M. Lessner
IPC: H01G9/00 , H01G9/042 , C09D125/18 , C09D5/24 , C09D4/06 , C09D165/00 , C08F12/30 , C09D133/14 , C09D7/65 , H01G9/15 , H01G9/025 , C08F212/14 , C09D7/40 , H01G9/028
Abstract: A dispersion comprising first particles comprising conductive polymer and polyanion and second particles comprising the conductive polymer and said polyanion wherein the first particles have an average particle diameter of at least 1 micron to no more than 10 microns and the second particles have an average particle diameter of at least 1 nm to no more than 600 nm.
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23.
公开(公告)号:US11081290B2
公开(公告)日:2021-08-03
申请号:US16741105
申请日:2020-01-13
Applicant: KEMET Electronics Corporation
Inventor: Yaru Shi , Antony P. Chacko , Ajaykumar Bunha , Qingping Chen , Elisabeth Crittendon Key
Abstract: Provided is an improved capacitor formed by a process comprising: providing an anode comprising a dielectric thereon wherein the anode comprises a sintered powder wherein the powder has a powder charge of at least 45,000 μFV/g; and forming a first conductive polymer layer encasing at least a portion of the dielectric by applying a first slurry wherein the first slurry comprises a polyanion and a conductive polymer and wherein the polyanion and conductive polymer are in a weight ratio of greater than 3 wherein the conductive polymer and polyanion forms conductive particles with an average particle size of no more than 20 nm.
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公开(公告)号:US10943742B2
公开(公告)日:2021-03-09
申请号:US16435762
申请日:2019-06-10
Applicant: KEMET Electronics Corporation
Inventor: Ajaykumar Bunha , Antony P. Chacko , Yaru Shi , Qingping Chen , Philip M. Lessner
IPC: H01G9/00 , H01G9/042 , C09D125/18 , C09D5/24 , C09D4/06 , C09D165/00 , C08F212/14 , C08F12/30 , C09D133/14 , C09D7/65 , H01G9/15 , H01G9/025
Abstract: A capacitor, and process for forming a capacitor, is described wherein the capacitor comprises a conductive polymer layer. The conductive polymer comprises first particles comprising conductive polymer and polyanion and second particles comprising the conductive polymer and said polyanion wherein the first particles have an average particle diameter of at least 1 micron to no more than 10 microns and the second particles have an average particle diameter of at least 1 nm to no more than 600 nm.
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公开(公告)号:US20200373089A1
公开(公告)日:2020-11-26
申请号:US16992714
申请日:2020-08-13
Applicant: KEMET Electronics Corporation
Inventor: Yaru Shi , Antony P. Chacko , Chenyi Gu , Ajaykumar Bunha , Qingping Chen
Abstract: The invention is related to an improved capacitor and an improved process for forming a capacitor. The process comprises forming an anode comprising a dielectric on the anode. A cathode layer is then formed on the dielectric wherein the cathode layer comprises a self-doped conductive polymer and a cross-linker wherein a weight ratio of crosslinker to self-doped conductive polymer is at least 0.01 to no more than 2.
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公开(公告)号:US10650980B2
公开(公告)日:2020-05-12
申请号:US16165649
申请日:2018-10-19
Applicant: KEMET Electronics Corporation
Inventor: Ajaykumar Bunha , Antony P. Chacko , Qingping Chen , Yaru Shi , Philip M. Lessner
IPC: H01G9/042 , C09D125/18 , C09D4/06 , C09D7/65 , C09D5/24 , C09D165/00 , H01G9/00 , H01G9/15 , H01G9/025 , C08F12/30 , H01B1/12 , C08F212/14 , C09D133/14 , H01G9/028
Abstract: A capacitor and process for forming the capacitor, is provided wherein the capacitor comprises a conductive polymer layer. The conductive polymer comprises first particles comprising conductive polymer and polyanion and second particles comprising the conductive polymer and said polyanion wherein the first particles have an average particle diameter of at least 1 micron to no more than 10 microns and the second particles have an average particle diameter of at least 1 nm to no more than 600 nm.
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公开(公告)号:US10340091B2
公开(公告)日:2019-07-02
申请号:US15595137
申请日:2017-05-15
Applicant: KEMET Electronics Corporation
Inventor: Ajaykumar Bunha , Antony P. Chacko , Yaru Shi , Qingping Chen , Philip M. Lessner
Abstract: A capacitor and a method of making a capacitor, is provided with improved reliability performance. The capacitor comprises an anode; a dielectric on the anode; and a cathode on the dielectric wherein the cathode comprises a conductive polymer and a polyanion wherein the polyanion is a copolymer comprising groups A, B and C represented by Formula AxByCz as described herein.
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公开(公告)号:US20190115158A1
公开(公告)日:2019-04-18
申请号:US15787126
申请日:2017-10-18
Applicant: KEMET Electronics Corporation
Inventor: Ajaykumar Bunha , Antony P. Chacko , Qinping Chen , Yaru Shi , Philip M. Lessner
IPC: H01G9/042 , C09D5/24 , C09D7/12 , C09D4/06 , C09D125/18 , C09D165/00
Abstract: A capacitor and process for forming the capacitor, is provided wherein the capacitor comprises a conductive polymer layer. The conductive polymer comprises first particles comprising conductive polymer and polyanion and second particles comprising the conductive polymer and said polyanion wherein the first particles have an average particle diameter of at least 1 micron to no more than 10 microns and the second particles have an average particle diameter of at least 1 nm to no more than 600 nm.
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