公开(公告)号：US20210305275A1

公开(公告)日：2021-09-30

申请号：US17004251

申请日：2020-08-27

Applicant: Kioxia Corporation

Inventor： Katsuaki NATORI ,  Hiroshi TOYODA ,  Masayuki KITAMURA ,  Takayuki BEPPU ,  Koji YAMAKAWA ,  Kenichiro TORATANI

IPC: H01L27/11582 ,  C23C16/06 ,  C23C16/56

Abstract: A semiconductor device includes a conductive film containing molybdenum and a metal element. The metal element has a melting point lower than the melting point of molybdenum and forms a complete solid solution with molybdenum. The metal element as a material for composing the conductive film is at least one selected from the group consisting of, for example, titanium, vanadium, and niobium.