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公开(公告)号：US20220085066A1
公开(公告)日：2022-03-17
申请号：US17459856
申请日：2021-08-27
Applicant: Kioxia Corporation
Inventor： Katsuaki NATORI , Hiroshi TOYODA , Koji YAMAKAWA , Takayuki BEPPU , Masayuki KITAMURA
IPC: H01L27/11582 , H01L27/11556
Abstract: According to one embodiment, a method for manufacturing a semiconductor device includes: (a) supplying an adsorbing material over an insulating film, wherein the adsorbing material is selected from the group consisting of H2O, HF, NO, NO2, NF3, and combinations thereof; (b) supplying a Mo material over the insulating film; (c) supplying a reducing agent over the insulating film; and (d) repeating the steps (a) to (c).
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2.发明公开公开(公告)号：US20240130125A1
公开(公告)日：2024-04-18
申请号：US18343176
申请日：2023-06-28
Applicant: Kioxia Corporation
Inventor： Katsuaki NATORI , Hiroshi TOYODA , Masayuki KITAMURA , Takayuki BEPPU , Koji YAMAKAWA , Kenichiro TORATANI
Abstract: A semiconductor device includes a conductive film containing molybdenum and a metal element. The metal element has a melting point lower than the melting point of molybdenum and forms a complete solid solution with molybdenum. The metal element as a material for composing the conductive film is at least one selected from the group consisting of, for example, titanium, vanadium, and niobium.
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公开(公告)号：US20210305275A1
公开(公告)日：2021-09-30
申请号：US17004251
申请日：2020-08-27
Applicant: Kioxia Corporation
Inventor： Katsuaki NATORI , Hiroshi TOYODA , Masayuki KITAMURA , Takayuki BEPPU , Koji YAMAKAWA , Kenichiro TORATANI
IPC: H01L27/11582 , C23C16/06 , C23C16/56
Abstract: A semiconductor device includes a conductive film containing molybdenum and a metal element. The metal element has a melting point lower than the melting point of molybdenum and forms a complete solid solution with molybdenum. The metal element as a material for composing the conductive film is at least one selected from the group consisting of, for example, titanium, vanadium, and niobium.
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