公开(公告)号：US20220165554A1

公开(公告)日：2022-05-26

申请号：US17669734

申请日：2022-02-11

Applicant: KIOXIA CORPORATION

Inventor： Katsuaki NATORI ,  Hiroshi TOYODA ,  Masayuki KITAMURA ,  Takayuki BEPPU

IPC: H01J37/32 ,  H01L21/285 ,  H01L27/11582 ,  H01L21/673 ,  C23C16/455 ,  C23C16/06 ,  C23C16/44 ,  C23C16/458 ,  H01L21/28

Abstract: A method of manufacturing a semiconductor device includes placing a substrate in a housing, supplying first gas containing molybdenum to the housing to form a film that contains molybdenum, on the substrate, removing the substrate with the formed film from the hosing, and then supplying second gas containing chlorine to the housing to remove molybdenum deposited on a surface of the housing.

公开(公告)号：US20240178298A1

公开(公告)日：2024-05-30

申请号：US18463348

申请日：2023-09-08

Applicant: Kioxia Corporation

Inventor： Takayuki BEPPU ,  Hiroko TAHARA ,  Masayuki KITAMURA ,  Hiroshi TOYODA ,  Hiroyuki OHTORI

IPC: H01L29/49 ,  H01L23/528 ,  H10B41/27 ,  H10B43/27

CPC classification number: H01L29/495 ,  H01L23/5283 ,  H10B41/27 ,  H10B43/27

Abstract: In one embodiment, a semiconductor device includes a first layer including a metal element. The device further includes a first insulator that is in contact with the first layer and includes silicon and oxygen. The device further includes a second layer that is in contact with the first insulator and includes molybdenum or tungsten.

公开(公告)号：US20220085066A1

公开(公告)日：2022-03-17

申请号：US17459856

申请日：2021-08-27

Applicant: Kioxia Corporation

Inventor： Katsuaki NATORI ,  Hiroshi TOYODA ,  Koji YAMAKAWA ,  Takayuki BEPPU ,  Masayuki KITAMURA

IPC: H01L27/11582 ,  H01L27/11556

Abstract: According to one embodiment, a method for manufacturing a semiconductor device includes: (a) supplying an adsorbing material over an insulating film, wherein the adsorbing material is selected from the group consisting of H2O, HF, NO, NO2, NF3, and combinations thereof; (b) supplying a Mo material over the insulating film; (c) supplying a reducing agent over the insulating film; and (d) repeating the steps (a) to (c).

公开(公告)号：US20210066468A1

公开(公告)日：2021-03-04

申请号：US17003181

申请日：2020-08-26

Applicant: KIOXIA CORPORATION

Inventor： Takayuki BEPPU ,  Masayuki KITAMURA ,  Hiroshi TOYODA ,  Katsuaki NATORI

IPC: H01L29/423 ,  H01L27/11582 ,  H01L29/49 ,  H01L21/28

Abstract: According to at least one embodiment, a semiconductor device includes a plurality of insulating films adjacent to each other. A conductive film is provided between the plurality of insulating films. The conductive film includes molybdenum having a grain diameter substantially the same as a distance from an upper surface to a lower surface of the conductive film.

公开(公告)号：US20230295801A1

公开(公告)日：2023-09-21

申请号：US17943695

申请日：2022-09-13

Applicant: Kioxia Corporation

Inventor： Shigeru KINOSHITA ,  Hiroshi TOYODA ,  Satoshi WAKATSUKI ,  Masayuki KITAMURA ,  Naomi FUKUMAKI

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/40 ,  C23C16/34

CPC classification number: C23C16/45529 ,  C23C16/34 ,  C23C16/403 ,  C23C16/4408 ,  C23C16/4412 ,  C23C16/45544

Abstract: According to one embodiment, a film forming method includes alternately performing a first process including at least two times of a first sequence and a second process including at least one time of a second sequence. The first sequence includes supplying a film forming gas into a film forming chamber, supplying a first purge gas into the film forming chamber, supplying a first reduction gas into the film forming chamber, and supplying a second purge gas into the film forming chamber, in order, and the second sequence includes supplying a second reduction gas into the film forming chamber, and supplying a third purge gas into the film forming chamber, in order.

公开(公告)号：US20240130125A1

公开(公告)日：2024-04-18

申请号：US18343176

申请日：2023-06-28

Applicant: Kioxia Corporation

Inventor： Katsuaki NATORI ,  Hiroshi TOYODA ,  Masayuki KITAMURA ,  Takayuki BEPPU ,  Koji YAMAKAWA ,  Kenichiro TORATANI

IPC: H10B43/27 ,  C23C16/06 ,  C23C16/56

CPC classification number: H10B43/27 ,  C23C16/06 ,  C23C16/56 ,  H01L21/28

Abstract: A semiconductor device includes a conductive film containing molybdenum and a metal element. The metal element has a melting point lower than the melting point of molybdenum and forms a complete solid solution with molybdenum. The metal element as a material for composing the conductive film is at least one selected from the group consisting of, for example, titanium, vanadium, and niobium.

公开(公告)号：US20230422500A1

公开(公告)日：2023-12-28

申请号：US18172549

申请日：2023-02-22

Applicant: Kioxia Corporation

Inventor： Tomotaka ARIGA ,  Masayuki KITAMURA ,  Hiroshi TOYODA

IPC: H10B43/27

CPC classification number: H10B43/27

Abstract: A semiconductor device includes a plurality of insulating layers, a plurality of conductive layers that are formed alternately with the plurality of insulating layers, an interlayer film, and a channel. The interlayer film is different from the conductive layer, has a crystal structure of a hexagonal crystal system, and is formed between at least one of the insulating layers and at least one of the conductive layers. The channel penetrates through the plurality of conductive layers, the interlayer film, and the plurality of insulating layers.

公开(公告)号：US20230088700A1

公开(公告)日：2023-03-23

申请号：US17643717

申请日：2021-12-10

Applicant: Kioxia Corporation

Inventor： Tomotaka ARIGA ,  Masayuki KITAMURA ,  Hiroshi TOYODA

IPC: H01L27/11582 ,  H01L21/28 ,  H01L29/49

Abstract: A semiconductor device that can have an improved data retention characteristic is provided. A semiconductor device includes a stacked body and a memory pillar formed in a memory hole of the stacked body. The memory pillar has a structure in which a semiconductor portion 61b, a tunnel insulating film 62a, and a charge storage layer 62b are sequentially stacked. A block insulating film 53 is provided between the charge storage layer 62b and a conductive layer 52. The conductive layer 52 contains molybdenum. The block insulating film 53 includes a silicon oxide film 53a and an aluminum oxide film 53b. A region from the conductive layer 52 to the aluminum oxide film 53b contains chlorine, which prevents OH diffusion. The concentration of chlorine at a second portion closer to the aluminum oxide film 53b than a first portion in the conductive layer 52 is higher than the concentration of impurities at the first portion in the conductive layer.

公开(公告)号：US20210305275A1

公开(公告)日：2021-09-30

申请号：US17004251

申请日：2020-08-27

Applicant: Kioxia Corporation

Inventor： Katsuaki NATORI ,  Hiroshi TOYODA ,  Masayuki KITAMURA ,  Takayuki BEPPU ,  Koji YAMAKAWA ,  Kenichiro TORATANI

IPC: H01L27/11582 ,  C23C16/06 ,  C23C16/56

Abstract: A semiconductor device includes a conductive film containing molybdenum and a metal element. The metal element has a melting point lower than the melting point of molybdenum and forms a complete solid solution with molybdenum. The metal element as a material for composing the conductive film is at least one selected from the group consisting of, for example, titanium, vanadium, and niobium.