公开(公告)号：US20080169588A1

公开(公告)日：2008-07-17

申请号：US11652048

申请日：2007-01-11

申请人： Hong Shih ,  Duane Outka ,  Shenjian Liu ,  John Daugherty

发明人： Hong Shih ,  Duane Outka ,  Shenjian Liu ,  John Daugherty

IPC分类号： H05H1/26

CPC分类号： H01J9/24 ,  H01J37/32467 ,  H01J37/32495 ,  Y10T29/4973

摘要： Two methods of extending the lifetime of yttrium oxide as a plasma chamber material are provided. One method comprises making a three-layer component of a plasma processing chamber by co-sintering a dual-layer green body where one layer comprises ceramic particles and a second layer comprises yttria particles. The two layers are in intimate contact during the sintering process. In a preferred embodiment, the three layer component comprises an outer layer of yttria, an intermediate layer of YAG, and a second outer layer of alumina. Optionally, the disks are pressed together during the sintering process. The resulting three-layer component is very low in porosity. Preferably, the porosity of any of the outer layer of yttria, the intermediate layer of YAG, and the second outer layer of alumina, is less than 3%. The second method comprises sealing an yttria plasma spray coated component by applying a liquid anaerobic sealant with a room temperature viscosity of less than 50 cP to the component by brushing the sealant on all yttria surfaces of the component, wet cleaning the component, curing the wet cleaned component for over 2 hours at a temperature of at least 150° C. in an N2 environment; and, applying a second sealant coat to the cured substrate by repeating the procedure used to apply the first coat.

摘要翻译： 提供延长作为等离子体室材料的氧化钇的寿命的两种方法。 一种方法包括通过共同烧结双层生坯，制造等离子体处理室的三层组分，其中一层包含陶瓷颗粒，第二层包含氧化钇颗粒。 两层在烧结过程中紧密接触。 在优选的实施方案中，三层组分包括氧化钇的外层，YAG的中间层和氧化铝的第二外层。 可选地，在烧结过程中将盘压在一起。 所得到的三层组分的孔隙率非常低。 优选地，氧化钇的外层，YAG的中间层和氧化铝的第二外层中的任一个的孔隙率小于3％。 第二种方法包括通过将组分的所有氧化钇表面上的密封剂刷刷，将零件的室温粘度低于50cP的液体厌氧密封剂施加到组分上来密封氧化钇等离子喷涂组分，湿清洗组分，固化湿 在N2环境中在至少150℃的温度下清洁组分超过2小时; 并且通过重复用于施加第一涂层的程序将第二密封剂涂层施加到固化的基底上。

公开(公告)号：US07208420B1

公开(公告)日：2007-04-24

申请号：US10897880

申请日：2004-07-22

申请人： Zhigang Mao ,  Shenjian Liu

发明人： Zhigang Mao ,  Shenjian Liu

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： H01L21/32136

摘要： A method of forming conductive connections for semiconductor devices is provided. An organic low-k dielectric layer is formed over a wafer. A conductive aluminum containing layer is formed over the organic low-k dielectric layer. The wafer is placed in an etch chamber. An etch gas comprising HBr is provided into the etch chamber. A plasma is formed from the etch gas comprising HBr. The plasma from the etch gas comprising HBr is used to selectively etch the conductive aluminum containing layer with respect to the low-k dielectric layer.

摘要翻译： 提供一种形成用于半导体器件的导电连接的方法。 在晶片上形成有机低k电介质层。 在有机低k电介质层上形成导电含铝层。 将晶片放置在蚀刻室中。 包括HBr的蚀刻气体被提供到蚀刻室中。 由包括HBr的蚀刻气体形成等离子体。 来自包含HBr的蚀刻气体的等离子体用于相对于低k电介质层选择性地蚀刻含导电的铝层。

公开(公告)号：US20050274396A1

公开(公告)日：2005-12-15

申请号：US10863360

申请日：2004-06-09

申请人： Hong Shih ,  Tuochuan Huang ,  Duane Outka ,  Jack Kuo ,  Shenjian Liu ,  Bruno Morel ,  Anthony Chen

发明人： Hong Shih ,  Tuochuan Huang ,  Duane Outka ,  Jack Kuo ,  Shenjian Liu ,  Bruno Morel ,  Anthony Chen

IPC分类号： B08B3/12 ,  C23C16/00 ,  C23C16/44

CPC分类号： C23C16/4407 ,  H01J37/32862

摘要： Methods for wet cleaning quartz surfaces of components for plasma processing chambers in which semiconductor substrates are processed, such as etch chambers and resist stripping chambers, include contacting the quartz surface with at least one organic solvent, a basic solution and different acid solutions, so as to remove organic and metallic contaminants from the quartz surface. The quartz surface is preferably contacted with one of the acid solutions at least two times.

摘要翻译： 用于湿处理其中处理半导体衬底的等离子体处理室的部件的石英表面的方法，例如蚀刻室和抗蚀剂剥离室，包括使石英表面与至少一种有机溶剂，碱性溶液和不同的酸溶液接触，以便 以从石英表面去除有机和金属污染物。 石英表面优选与一种酸溶液接触至少两次。

公开(公告)号：US20120144640A1

公开(公告)日：2012-06-14

申请号：US13324287

申请日：2011-12-13

申请人： Hong Shih ,  Duane Outka ,  Shenjian Liu ,  John Daugherty

发明人： Hong Shih ,  Duane Outka ,  Shenjian Liu ,  John Daugherty

IPC分类号： B23P6/00

CPC分类号： H01J9/24 ,  H01J37/32467 ,  H01J37/32495 ,  Y10T29/4973

摘要： A method of installing a component of a plasma processing chamber by replacing a used component with a component made by forming a dual-layer green body and co-sintering the dual-layer green body so as to form a three-layer component. The three layer component comprises an outer layer of yttria, an intermediate layer of YAG, and a second outer layer of alumina. The component is installed such that the outer layer of yttria is exposed to the plasma environment when the chamber is in operation.

摘要翻译： 通过用通过形成双层生坯制成的部件代替使用的部件并共同烧结双层生坯以形成三层部件来安装等离子体处理室的部件的方法。 三层组件包括氧化钇的外层，YAG的中间层和氧化铝的第二外层。 安装该部件使得当腔室运行时，氧化钇的外层暴露于等离子体环境中。

公开(公告)号：US20060273072A1

公开(公告)日：2006-12-07

申请号：US11440163

申请日：2006-05-23

申请人： Sok Tan ,  Shenjian Liu ,  Harmeet Singh ,  Sam Lee ,  Linda Lee

发明人： Sok Tan ,  Shenjian Liu ,  Harmeet Singh ,  Sam Lee ,  Linda Lee

IPC分类号： C23F1/00 ,  B44C1/22 ,  H01L21/302

CPC分类号： H01L21/28061 ,  H01L21/32137

摘要： The embodiments provides an improved tungsten silicide etching process with reduced etch rate micro-loading effect. In one embodiment, a method for etching a layer formed on a substrate is provided. The method includes providing a substrate into a plasma processing chamber, the substrate having a metal silicide layer formed thereon and a patterned mask defined over the metal silicide layer. The method also includes supplying an etching gas mixture of a fluorine-containing gas, a chlorine-containing gas, a nitrogen-containing gas, and an oxygen-containing gas to the plasma processing chamber, wherein the ratio of the nitrogen-containing gas to the fluorine-containing gas is between about 5 to about 15. In addition, the method includes generating a plasma in the plasma processing chamber using the supplied etching gas mixture to etch the metal silicide layer in regions not covered by the patterned mask, the patterned mask defining dense regions and isolated regions, wherein the generated plasma is configured to remove the metal silicide layer in the dense regions and the isolated regions at a reduced etch rate micro-loading.

摘要翻译： 实施例提供了一种改进的硅化钨蚀刻工艺，具有降低的蚀刻速率微负载效应。 在一个实施例中，提供了蚀刻形成在基板上的层的方法。 该方法包括将衬底提供到等离子体处理室中，所述衬底具有形成在其上的金属硅化物层和限定在金属硅化物层上的图案化掩模。 该方法还包括向等离子体处理室供应含氟气体，含氯气体，含氮气体和含氧气体的蚀刻气体混合物，其中含氮气体与 含氟气体在约5至约15之间。此外，该方法包括使用所提供的蚀刻气体混合物在等离子体处理室中产生等离子体，以在未被图案化掩模覆盖的区域中蚀刻金属硅化物层， 掩模，其限定致密区域和隔离区域，其中所产生的等离子体被配置为以降低的蚀刻速率微负载去除密集区域和隔离区域中的金属硅化物层。

公开(公告)号：US06774045B1

公开(公告)日：2004-08-10

申请号：US10189756

申请日：2002-07-02

申请人： Shenjian Liu ,  Gregory James Goldspring

发明人： Shenjian Liu ,  Gregory James Goldspring

IPC分类号： H01L21302

CPC分类号： H01L21/02071

摘要： This invention relates to a method for reducing halogen gasses and byproducts in post-etch applications. The method consists of exposing the substrate to O2/N2 plasma and water vapor in a process chamber.

摘要翻译： 本发明涉及在蚀刻后应用中减少卤素气体和副产物的方法。 该方法包括将基底暴露于处理室中的O 2 / N 2等离子体和水蒸汽。