公开(公告)号：US06580095B2

公开(公告)日：2003-06-17

申请号：US09874997

申请日：2001-06-07

申请人： Yoshihiko Tani ,  Shigeki Hayashida ,  Tatsuya Morioka ,  Seizo Kakimoto ,  Toshihiko Fukushima

发明人： Yoshihiko Tani ,  Shigeki Hayashida ,  Tatsuya Morioka ,  Seizo Kakimoto ,  Toshihiko Fukushima

IPC分类号： H01L2715

CPC分类号： H01L27/14698 ,  H01L27/14609 ,  H01L27/14689

摘要： A circuit-containing photodetector is provided which can have a high sensitivity and response to light of a short wavelength and can be manufactured in a good yield. The circuit-containing photodetector includes a semiconductor substrate, a semiconductor layer formed thereon, and a conductive impurity region formed in the semiconductor layer for transmitting a signal. In the semiconductor layer, a trench is formed to have a depth to reach the substrate. An impurity region of a photodetector element is formed at the surface of the semiconductor substrate exposed at the bottom of the trench. A signal processing circuit for processing an electric signal from the photodetector element is formed on the semiconductor layer. The conductive impurity region for transmitting the electric signal from the photodetector element is formed to extend from the bottom of the trench to the upper surface of the semiconductor layer.