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    Light receiving element and light receiving device incorporating circuit and optical disk drive
    2.
    发明授权
    Light receiving element and light receiving device incorporating circuit and optical disk drive 有权
    光接收元件和光接收装置并入电路和光盘驱动器

    公开(公告)号：US07307326B2

    公开(公告)日：2007-12-11

    申请号：US10499357

    申请日：2002-12-10

    申请人： Shigeki Hayashida ,  Tatsuya Morioka ,  Yoshihiko Tani ,  Isamu Ohkubo ,  Hideo Wada

    发明人： Shigeki Hayashida ,  Tatsuya Morioka ,  Yoshihiko Tani ,  Isamu Ohkubo ,  Hideo Wada

    IPC分类号： H01L31/00 ,  H01L31/0232

    CPC分类号： H01L31/103 ,  H01L31/02161

    摘要： A light receiving device includes a silicon substrate, a first P type diffusion layer on the silicon substrate, and a P type semiconductor layer on the P type diffusion layer. On a surface part of the P type semiconductor layer, two N type diffusion layers as light receiving parts, and a second P type diffusion layer between the two N type diffusion layers are provided. On the P type semiconductor layer, an antireflection film structure composed of a first silicon oxide formed by thermal oxidation and a second silicon oxide formed by CVD is provided. A film thickness of the first silicon oxide is set at about 15 nm, thus a defect in a interface between the first silicon oxide and the P type semiconductor layer is prevented. A film thickness of the second silicon oxide is set at about 100 nm, thus a leak current between cathodes is prevented when a power supply voltage is applied for long period of time.

    摘要翻译： 光接收装置包括硅衬底，硅衬底上的第一P型扩散层和P型扩散层上的P型半导体层。 在P型半导体层的表面部分设置有作为光接收部的两个N型扩散层和在两个N型扩散层之间的第二P型扩散层。 在P型半导体层上，提供了由通过热氧化形成的第一氧化硅和通过CVD形成的第二氧化硅构成的抗反射膜结构。 第一氧化硅的膜厚设定为约15nm，因此防止了第一氧化硅与P型半导体层之间的界面的缺陷。 第二氧化硅的膜厚设定为约100nm，因此长时间施加电源电压时，能够防止阴极之间的漏电流。

    Light receiving element and light receiving device incorporating circuit and optical disk drive
    3.
    发明申请
    Light receiving element and light receiving device incorporating circuit and optical disk drive 有权
    光接收元件和光接收装置并入电路和光盘驱动器

    公开(公告)号：US20050116320A1

    公开(公告)日：2005-06-02

    申请号：US10499357

    申请日：2002-12-10

    申请人： Shigeki Hayashida ,  Tatsuya Morioka ,  Yoshihiko Tani ,  Isamu Ohkubo ,  Hideo Wada

    发明人： Shigeki Hayashida ,  Tatsuya Morioka ,  Yoshihiko Tani ,  Isamu Ohkubo ,  Hideo Wada

    IPC分类号： H01L31/0216 ,  H01L31/103 ,  H01L23/58

    CPC分类号： H01L31/103 ,  H01L31/02161

    摘要： A light receiving device includes a silicon substrate, a first P type diffusion layer on the silicon substrate, and a P type semiconductor layer on the P type diffusion layer. On a surface part of the P type semiconductor layer, two N type diffusion layers as light receiving parts, and a second P type diffusion layer between the two N type diffusion layers are provided. On the P type semiconductor layer, an antireflection film structure composed of a first silicon oxide formed by thermal oxidation and a second silicon oxide formed by CVD is provided. A film thickness of the first silicon oxide is set at about 15 nm, thus a defect in a interface between the first silicon oxide and the P type semiconductor layer is prevented. A film thickness of the second silicon oxide is set at about 100 nm, thus a leak current between cathodes is prevented when a power supply voltage is applied for long period of time.

    摘要翻译： 光接收装置包括硅衬底，硅衬底上的第一P型扩散层和P型扩散层上的P型半导体层。 在P型半导体层的表面部分设置有作为光接收部的两个N型扩散层和在两个N型扩散层之间的第二P型扩散层。 在P型半导体层上，提供了由通过热氧化形成的第一氧化硅和通过CVD形成的第二氧化硅构成的抗反射膜结构。 第一氧化硅的膜厚设定为约15nm，因此防止了第一氧化硅与P型半导体层之间的界面的缺陷。 第二氧化硅的膜厚设定为约100nm，因此长时间施加电源电压时，能够防止阴极之间的漏电流。

    Split type light receiving element and circuit-built-in light-receiving element and optical disk drive
    4.
    发明授权
    Split type light receiving element and circuit-built-in light-receiving element and optical disk drive 失效
    分体式光接收元件和电路内置光接收元件和光盘驱动器

    公开(公告)号：US07098489B2

    公开(公告)日：2006-08-29

    申请号：US10483493

    申请日：2002-07-03

    申请人： Tatsuya Morioka ,  Shigeki Hayashida ,  Yoshihiko Tani ,  Isamu Ohkubo

    发明人： Tatsuya Morioka ,  Shigeki Hayashida ,  Yoshihiko Tani ,  Isamu Ohkubo

    IPC分类号： H01L29/205

    CPC分类号： H01L31/103

    摘要： A plurality of N-type diffusion layers are formed a specified distance apart on a P-type semiconductor layer. A P-type leak prevention layer formed between at least N-type diffusion layers prevents leaking between the diffusion layers. A dielectric film is formed in at least a light incident area on a P-type semiconductor layer including the diffusion layers and the leak prevention layer. Accordingly, provided are a split type light receiving element positively functioning as a split type light receiving element even when charge is accumulated in the dielectric film and having a uniform sensitivity throughout the entire area on a light receiving surface, and a circuit-built-in light receiving element and an optical disk device using the split type light receiving element.

    摘要翻译： 多个N型扩散层在P型半导体层上分开规定距离地形成。 形成在至少N型扩散层之间的P型防漏层防止了扩散层之间的泄漏。 在包括扩散层和防漏层的P型半导体层的至少入射光区域中形成介电膜。 因此，即使在电介质膜中积累电荷并且在光接收表面上的整个区域具有均匀的灵敏度的情况下，提供了作为分割型光接收元件的分体式光接收元件，并且电路内置 光接收元件和使用分离式光接收元件的光盘装置。

    Light receiving device circuit-built-in type light receiving unit and optical disk unit
    5.
    发明申请
    Light receiving device circuit-built-in type light receiving unit and optical disk unit 审中-公开
    光接收装置电路内置型光接收单元和光盘单元

    公开(公告)号：US20050045979A1

    公开(公告)日：2005-03-03

    申请号：US10497242

    申请日：2002-11-29

    申请人： Tatsuya Morioka ,  Shigeki Hayashida ,  Yoshihiko Tani ,  Isamu Ohkubo ,  Hideo Wada

    发明人： Tatsuya Morioka ,  Shigeki Hayashida ,  Yoshihiko Tani ,  Isamu Ohkubo ,  Hideo Wada

    IPC分类号： H01L31/0216 ,  H01L31/103 ,  H01L27/14

    CPC分类号： H01L31/02161 ,  H01L31/103 ,  H01L31/1035

    摘要： A first P-type diffusion layer and a P-type semiconductor layer are provided on a silicon substrate, and two N-type diffusion layers are provided on a front surface of this P-type semiconductor layer to form two light receiving units. Three-layer translucent films, a first silicon oxide film, a silicon nitride film, and a second silicon oxide film are disposed on the N-type diffusion layers and on the P-type semiconductor layer between the two diffusion layers. Holes produced during a production process and distributed and captured in two interfaces between the three-layer translucent films can reduce a field intensity in the vicinity of the surface of the P-type semiconductor layer to below a conventional level and an inversion of a conductive type to reduce a leak current between the light receiving units accordingly.

    摘要翻译： 在硅衬底上设置第一P型扩散层和P型半导体层，在该P型半导体层的前表面上设置两个N型扩散层，以形成两个光接收单元。 三层半透膜，第一氧化硅膜，氮化硅膜和第二氧化硅膜设置在两个扩散层之间的N型扩散层和P型半导体层上。 在生产过程中产生的并且在三层半透明膜之间的两个界面中分布和捕获的孔可以将P型半导体层的表面附近的场强降低到传统水平以下并导致导通型 以相应地减小光接收单元之间的泄漏电流。

    Light receiving element and light receiving device incorporating circuit and optical disc drive
    6.
    发明申请
    Light receiving element and light receiving device incorporating circuit and optical disc drive 审中-公开
    光接收元件和光接收装置并入电路和光盘驱动器

    公开(公告)号：US20050001231A1

    公开(公告)日：2005-01-06

    申请号：US10497202

    申请日：2002-12-10

    申请人： Shigeki Hayashida ,  Tatsuya Morioka ,  Yoshihiko Tani ,  Isamu Ohkubo ,  Hideo Wada

    发明人： Shigeki Hayashida ,  Tatsuya Morioka ,  Yoshihiko Tani ,  Isamu Ohkubo ,  Hideo Wada

    IPC分类号： G11B7/12 ,  G11B7/123 ,  G11B7/13 ,  H01L27/14 ,  H01L31/0216 ,  H01L31/10 ,  H01L31/103 ,  H01L33/00

    CPC分类号： G11B7/123 ,  G11B7/13 ,  H01L27/14 ,  H01L31/02161 ,  H01L31/103

    摘要： A light receiving device includes a P type diffusion layer (101), a P type semiconductor layer (102), an N type diffusion layer (103) serving as a light receiving part, and a light transmitting film (104), all formed on a p type silicon substrate (100). The N type diffusion layer (103) has a thickness of 0.8 μm to 1.0 μm which is larger than an absorption length of incident light having wavelength of 400 nm, and such a concentration profile that a impurity concentration is not higher than 1E19 cm−3 on a surface and has a peak in a vicinity of the surface. Since recombination of carriers generated by the incident light is prevented in the vicinity of the surface of the N type diffusion layer (103), sensitivity of the light receiving device is enhanced and response speed is increased by the low-resistance N type diffusion layer (103) having a larger junction depth.

    摘要翻译： 光接收装置包括：P型扩散层（101），P型半导体层（102），用作光接收部分的N型扩散层（103）和透光膜（104），全部形成在 ap型硅衬底（100）。 N型扩散层（103）的厚度为0.8μm〜1.0μm，比波长400nm的入射光的吸收长度大，杂质浓度不高于1E19cm -1的浓度分布， 3>在表面附近具有峰值。 由于在N型扩散层（103）的表面附近防止了由入射光产生的载流子的复合，因此通过低电阻N型扩散层提高了光接收装置的灵敏度和响应速度（ 103）具有较大的结深度。

    LIGHT-EMITTING DEVICE
    7.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20110299268A1

    公开(公告)日：2011-12-08

    申请号：US13152587

    申请日：2011-06-03

    申请人： Shinya Ishizaki ,  Tomokazu Nada ,  Makoto Agatani ,  Makoto Matsuda ,  Shinji Osaki ,  Tatsuya Morioka ,  Hitoshi Matsushita ,  Toyonori Uemura ,  Toshio Hata

    发明人： Shinya Ishizaki ,  Tomokazu Nada ,  Makoto Agatani ,  Makoto Matsuda ,  Shinji Osaki ,  Tatsuya Morioka ,  Hitoshi Matsushita ,  Toyonori Uemura ,  Toshio Hata

    IPC分类号： F21V9/16 ,  F21V7/00

    CPC分类号： H05B33/22 ,  H01L25/0753 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48137 ,  H01L2224/48139

    摘要： The light-emitting device includes: a substrate which has a single layer structure in which a conductive member is partially provided on a surface of the substrate; a plurality of light-emitting elements which are directly provided on the surface of the substrate so as to be electrically connected with the conductive member; a first light reflection resin layer; a second light reflection resin layer which is provided in a looped shape on the surface of the substrate so as to surround an area in which the plurality of light-emitting elements are provided; and a sealing resin which covers the plurality of light-emitting elements. In the area in which the plurality of light-emitting elements are provided, the conductive member is covered with the first light reflection resin layer, the conductive member, which is provided under the second light reflection resin layer, is covered with the second light reflection resin layer directly, and a printed resistor, which is provided under the second light reflection resin layer, is covered with the second light reflection resin layer via the first light reflection resin layer. This makes it possible to provide the light-emitting device which (i) reduces absorption of light so as to achieve excellent light extraction efficiency, and (ii) is highly reliable.

    摘要翻译： 发光装置包括：具有单层结构的基板，其中导电构件部分地设置在基板的表面上; 多个发光元件，其直接设置在所述基板的表面上以与所述导电构件电连接; 第一光反射树脂层; 第二光反射树脂层，其以环状设置在所述基板的表面上，以围绕设置有所述多个发光元件的区域; 以及覆盖多个发光元件的密封树脂。 在设置有多个发光元件的区域中，导电部件被第一光反射树脂层覆盖，设置在第二光反射树脂层下方的导电部件被第二光反射覆盖 树脂层和设置在第二光反射树脂层下方的印刷电阻器经由第一光反射树脂层被第二光反射树脂层覆盖。 这使得可以提供（i）减少光的吸收以获得优异的光提取效率的发光装置，（ii）高可靠性。

    Illuminator including optical transmission mechanism
    10.
    发明授权
    Illuminator including optical transmission mechanism 有权
    照明器包括光传输机构

    公开(公告)号：US07389051B2

    公开(公告)日：2008-06-17

    申请号：US10861126

    申请日：2004-06-03

    申请人： Tatsuya Morioka ,  Mototaka Taneya

    发明人： Tatsuya Morioka ,  Mototaka Taneya

    IPC分类号： H04B10/00

    CPC分类号： H04B10/1141 ,  H04B10/116

    摘要： An illuminator including an optical transmission mechanism includes a transmission-side electric circuit for forming electric signals modulated in response to information, a light source for emitting intensity-modulated light in response to the electric modulated signals, optical wavelength conversion means including fluorescent material for converting part of the intensity-modulated light into illumination light, photoelectric conversion means for receiving another part of the modulated light and converting this part into reproduced electric modulated signals and a receiving-side electric circuit for reproducing the information from the reproduced electric modulated signals.

    摘要翻译： 包括光传输机构的照明装置包括用于响应于信息而形成电信号的发送侧电路，响应于电调制信号发射强度调制光的光源，包括用于转换的荧光材料的光波长转换装置 将强度调制光的一部分转换成照明光;光电转换装置，用于接收调制光的另一部分并将该部分转换成再生的电调制信号;以及接收侧电路，用于从再现的电调制信号再现信息。