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公开(公告)号:US20190244989A1
公开(公告)日:2019-08-08
申请号:US16386826
申请日:2019-04-17
IPC分类号: H01L27/146
CPC分类号: H01L27/1464 , H01L27/14609 , H01L27/1462 , H01L27/14623 , H01L27/14629 , H01L27/1463 , H01L27/14636 , H01L27/14685 , H01L27/14687 , H01L27/14698
摘要: A back-side illuminated image sensor includes memory regions formed in a semiconductor wafer. Each memory region is located between two opaque walls which extend into the semiconductor wafer. An opaque screen is arranged at the rear surface of the memory region and in electrical contact with the opaque walls.
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公开(公告)号:US20190006405A1
公开(公告)日:2019-01-03
申请号:US16122974
申请日:2018-09-06
申请人: OLYMPUS CORPORATION
发明人: Jumpei Yoneyama
IPC分类号: H01L27/146 , H04N5/369
CPC分类号: H01L27/14618 , H01L27/14636 , H01L27/14687 , H01L27/14698 , H04N5/369
摘要: An image pickup apparatus includes: an image pickup device with a light receiving portion being formed on a light receiving face; cover glass bonded to the light receiving face; and a wiring board bonded to a back face of the image pickup device; wherein an alignment mark is present on each of two orthogonal side faces, the alignment mark being at a predetermined relative position relative to the light receiving portion.
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公开(公告)号:US20180342634A1
公开(公告)日:2018-11-29
申请号:US16030134
申请日:2018-07-09
IPC分类号: H01L31/0352 , H01L31/105 , H01L27/146 , H01L31/0256 , H01L31/18 , H01L31/107 , H01L31/028
CPC分类号: H01L31/0352 , H01L27/14638 , H01L27/14649 , H01L27/14685 , H01L27/14698 , H01L31/0256 , H01L31/028 , H01L31/105 , H01L31/107 , H01L31/1808 , Y02E10/547
摘要: A Ge-on-Si photodetector constructed without doping or contacting Germanium by metal is described. Despite the simplified fabrication process, the device has responsivity of 1.24 A/W, corresponding to 99.2% quantum efficiency. Dark current is 40 nA at −4 V reverse bias. 3-dB bandwidth is 30 GHz.
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公开(公告)号:US20180342548A1
公开(公告)日:2018-11-29
申请号:US15989600
申请日:2018-05-25
申请人: DB HITEK CO., LTD.
发明人: Man Lyun HA
IPC分类号: H01L27/146 , H01L21/3115
CPC分类号: H01L27/14614 , H01L21/02321 , H01L21/3115 , H01L27/14643 , H01L27/14689 , H01L27/14698 , H04N5/374
摘要: An image sensor and a method of manufacturing the same are disclosed. The image sensor includes a photodiode disposed in a substrate, and transistors disposed on the substrate and electrically connected with the photodiode. A gate insulating layer of a source follower transistor among the transistors includes fluorine so as to remove defects such as dangling bonds.
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公开(公告)号:US10079263B2
公开(公告)日:2018-09-18
申请号:US15289577
申请日:2016-10-10
发明人: Florent Rochette
IPC分类号: H01L27/146 , H01L31/101 , H01L31/103 , H01L31/18
CPC分类号: H01L27/14696 , H01L27/1461 , H01L27/14649 , H01L27/14698 , H01L31/1013 , H01L31/1032 , H01L31/1832
摘要: A method for manufacturing a multi-spectral photodiode array in a CdxHg1-xTe semiconductor layer constituted of pixels, the method including a step of producing a PN junction in each pixel and further includes producing a cadmium-rich structure on the semiconductor layer, structured so that all the pixels are not surmounted by a same quantity of cadmium atoms, this quantity being able to be zero; and inter-diffusion annealing, realizing the diffusion of cadmium atoms from the cadmium-rich structure to the semiconductor layer. Pixels that do not all have the same cutoff wavelength are thereby obtained.
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公开(公告)号:US10002900B2
公开(公告)日:2018-06-19
申请号:US15656402
申请日:2017-07-21
发明人: Arvind Kumar , Mark Lamorey
IPC分类号: H01L21/00 , H01L27/146
CPC分类号: H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L27/14687 , H01L27/1469 , H01L27/14698 , H05K999/99
摘要: A method is provided for three-dimensional wafer scale integration of heterogeneous wafers with unequal die sizes that include a first wafer and a second wafer. The method includes selecting a periodicity for the second wafer to be manufactured that matches the periodicity of the first wafer. The method further includes manufacturing the second wafer in accordance with the selected periodicity. The method also includes placing, by a laser-based patterning device, a pattern in spaces between dies of the second wafer. The method additionally includes stacking the first wafer onto the second wafer, using a copper-to-copper bonding process to bond the first wafer to the second wafer.
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公开(公告)号:US20180138228A1
公开(公告)日:2018-05-17
申请号:US15868354
申请日:2018-01-11
发明人: Arvind Kumar , Mark Lamorey
IPC分类号: H01L27/146
CPC分类号: H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L27/14687 , H01L27/1469 , H01L27/14698
摘要: A method is provided for three-dimensional wafer scale integration of heterogeneous wafers with unequal die sizes that include a first wafer and a second wafer. The method includes selecting a periodicity for the second wafer to be manufactured that matches the periodicity of the first wafer. The method further includes manufacturing the second wafer in accordance with the selected periodicity. The method also includes placing, by a laser-based patterning device, a pattern in spaces between dies of the second wafer. The method additionally includes stacking the first wafer onto the second wafer, using a copper-to-copper bonding process to bond the first wafer to the second wafer.
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公开(公告)号:US09954024B2
公开(公告)日:2018-04-24
申请号:US15668265
申请日:2017-08-03
申请人: Sony Corporation
IPC分类号: H01L27/146 , H01L25/16 , H04N5/232 , H04N5/369
CPC分类号: H01L27/14634 , H01L25/167 , H01L25/18 , H01L27/14618 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/14643 , H01L27/14645 , H01L27/1469 , H01L27/14698 , H01L2924/0002 , H04N5/23241 , H04N5/369 , H04N5/3745 , H04N5/37455 , H01L2924/00
摘要: The present invention relates to a semiconductor device, a solid-state image sensor and a camera system capable of reducing the influence of noise at a connection between chips without a special circuit for communication and reducing the cost as a result. The semiconductor device includes: a first chip; and a second chip, wherein the first chip and the second chip are bonded to have a stacked structure, the first chip has a high-voltage transistor circuit mounted thereon, the second chip has mounted thereon a low-voltage transistor circuit having lower breakdown voltage than the high-voltage transistor circuit, and wiring between the first chip and the second chip is connected through a via formed in the first chip.
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公开(公告)号:US09954016B2
公开(公告)日:2018-04-24
申请号:US15228282
申请日:2016-08-04
申请人: Artilux Corporation
发明人: Yun-Chung Na , Szu-Lin Cheng , Shu-Lu Chen , Han-Din Liu , Hui-Wen Chen , Che-Fu Liang
IPC分类号: H01L27/146 , H01L31/0312 , H01L31/09 , H01L31/18 , H01L31/0232
CPC分类号: H01L27/14605 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14634 , H01L27/14636 , H01L27/14645 , H01L27/14649 , H01L27/1465 , H01L27/14685 , H01L27/14687 , H01L27/14689 , H01L27/1469 , H01L27/14698 , H01L31/02327 , H01L31/0312 , H01L31/09 , H01L31/1812 , H01L31/1876 , H01L31/1892
摘要: An image sensor array including a carrier substrate; a first group of photodiodes coupled to the carrier substrate, where the first group of photodiodes include a first photodiode, and where the first photodiode includes a semiconductor layer configured to absorb photons at visible wavelengths and to generate photo-carriers from the absorbed photons; and a second group of photodiodes coupled to the carrier substrate, where the second group of photodiodes include a second photodiode, and where the second photodiode includes a germanium-silicon region fabricated on the semiconductor layer, the germanium-silicon region configured to absorb photons at infrared or near-infrared wavelengths and to generate photo-carriers from the absorbed photons.
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公开(公告)号:US20180097031A1
公开(公告)日:2018-04-05
申请号:US15832951
申请日:2017-12-06
申请人: Sony Corporation
IPC分类号: H01L27/146 , H04N5/369 , H04N5/232 , H01L25/16
CPC分类号: H01L27/14634 , H01L25/167 , H01L25/18 , H01L27/14618 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/14643 , H01L27/14645 , H01L27/1469 , H01L27/14698 , H01L2924/0002 , H04N5/23241 , H04N5/369 , H04N5/3745 , H04N5/37455 , H04N5/379 , H01L2924/00
摘要: The present invention relates to a semiconductor device, a solid-state image sensor and a camera system capable of reducing the influence of noise at a connection between chips without a special circuit for communication and reducing the cost as a result. The semiconductor device includes: a first chip; and a second chip, wherein the first chip and the second chip are bonded to have a stacked structure, the first chip has a high-voltage transistor circuit mounted thereon, the second chip has mounted thereon a low-voltage transistor circuit having lower breakdown voltage than the high-voltage transistor circuit, and wiring between the first chip and the second chip is connected through a via formed in the first chip.
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