公开(公告)号：US08710485B2

公开(公告)日：2014-04-29

申请号：US13458042

申请日：2012-04-27

申请人： Masumi Saitoh ,  Toshinori Numata ,  Kiwamu Sakuma ,  Haruka Kusai ,  Takayuki Ishikawa

发明人： Masumi Saitoh ,  Toshinori Numata ,  Kiwamu Sakuma ,  Haruka Kusai ,  Takayuki Ishikawa

IPC分类号： H01L29/06 ,  H01L47/00

CPC分类号： H01L21/823431 ,  H01L27/101 ,  H01L27/1211 ,  H01L27/2409 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor device includes a fin type stacked layer structure which has first to third semiconductor layers, and first to third layer select transistors to select one of the first to third semiconductor layers. The second layer select transistor is normally on in the second semiconductor layer, and is controlled to be on or off in the first and third semiconductor layers. A channel region of the second semiconductor layer which is covered with a gate electrode of the second layer select transistor has a metal silicide.

摘要翻译： 根据一个实施例，半导体器件包括具有第一至第三半导体层的鳍式堆叠层结构以及选择第一至第三半导体层之一的第一至第三层选择晶体管。 第二层选择晶体管通常在第二半导体层中导通，并且在第一和第三半导体层中被控制为导通或截止。 被第二层选择晶体管的栅电极覆盖的第二半导体层的沟道区域具有金属硅化物。

公开(公告)号：US20120280303A1

公开(公告)日：2012-11-08

申请号：US13366845

申请日：2012-02-06

申请人： Masahiro KIYOTOSHI ,  Kiwamu Sakuma ,  Haruka Kusai

发明人： Masahiro KIYOTOSHI ,  Kiwamu Sakuma ,  Haruka Kusai

IPC分类号： H01L29/788 ,  H01L21/336

CPC分类号： H01L27/11556 ,  H01L27/11524 ,  H01L29/7889

摘要： According to one embodiment, a first trench extending in a first direction is formed in a stacked structure in which a plurality of spacer films and a plurality of channel semiconductor films are alternately stacked. A first space is formed by forming a recess in the channel semiconductor films from the first trench. A tunnel dielectric film is formed in the first space, and the first space is further filled with a floating gate electrode film. Second trenches that divide the stacked structure at predetermined interval in the first direction are formed so as to divide the floating gate electrode film between memory cells adjacent to each other in the first direction but not to divide the channel semiconductor films.

摘要翻译： 根据一个实施例，沿着第一方向延伸的第一沟槽以堆叠结构形成，其中多个隔离膜和多个沟道半导体膜交替堆叠。 通过在沟道半导体膜中形成来自第一沟槽的凹部来形成第一空间。 在第一空间中形成隧道电介质膜，并且第一空间进一步填充浮栅电极膜。 形成在第一方向上以预定间隔划分堆叠结构的第二沟槽，以便在第一方向上彼此相邻的存储单元之间划分浮栅电极膜，但不划分沟道半导体膜。