公开(公告)号：US20100201855A1

公开(公告)日：2010-08-12

申请号：US12698314

申请日：2010-02-02

申请人： Kazushi Wada ,  Yoichi Otsuka

发明人： Kazushi Wada ,  Yoichi Otsuka

IPC分类号： H04N5/335 ,  H01L31/18 ,  H01L31/0232

CPC分类号： H01L27/14818 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14843

摘要： A method for manufacturing a solid-state imaging device, in which a photoelectric conversion portion to receive light with a light-receiving surface and generate a signal charge is disposed in a substrate, includes the steps of forming a metal light-shield layer above the substrate and in a region other than a region corresponding to the light-receiving surface, forming a light-reflection layer above the metal light-shield layer, and forming a photoresist pattern layer from a negative type photoresist film formed above the light-reflection layer, by conducting an exposing treatment and a developing treatment, wherein in the forming of the light-reflection layer, the light-reflection layer includes a shape corresponding to a pattern shape of the photoresist pattern layer, and the light-reflection layer is formed in such a way as to reflect exposure light to the photoresist film in conduction of the exposing treatment in the forming of the photoresist pattern layer.

摘要翻译： 一种制造固态成像装置的方法，其中在基板中设置有用于接收具有光接收表面并产生信号电荷的光的光电转换部分，包括以下步骤：在 基板，并且在与受光面对应的区域以外的区域中，在金属遮光层上形成光反射层，从形成在光反射层上方的负型光致抗蚀剂膜形成光阻图案层 通过进行曝光处理和显影处理，其中在形成光反射层时，光反射层包括与光致抗蚀剂图案层的图案形状对应的形状，并且光反射层形成在 这样一种在光致抗蚀剂图案层的形成中在曝光处理的导通中反射曝光光到光致抗蚀剂膜的方式。