公开(公告)号：US08395699B2

公开(公告)日：2013-03-12

申请号：US12698314

申请日：2010-02-02

申请人： Kazushi Wada ,  Yoichi Otsuka

发明人： Kazushi Wada ,  Yoichi Otsuka

IPC分类号： H04N5/225

CPC分类号： H01L27/14818 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14843

摘要： A method for manufacturing a solid-state imaging device, in which a photoelectric conversion portion to receive light with a light-receiving surface and generate a signal charge is disposed in a substrate, includes the steps of forming a metal light-shield layer above the substrate and in a region other than a region corresponding to the light-receiving surface, forming a light-reflection layer above the metal light-shield layer, and forming a photoresist pattern layer from a negative type photoresist film formed above the light-reflection layer, by conducting an exposing treatment and a developing treatment, wherein in the forming of the light-reflection layer, the light-reflection layer includes a shape corresponding to a pattern shape of the photoresist pattern layer, and the light-reflection layer is formed in such a way as to reflect exposure light to the photoresist film in conduction of the exposing treatment in the forming of the photoresist pattern layer.

摘要翻译： 一种制造固态成像装置的方法，其中在基板中设置有用于接收具有光接收表面并产生信号电荷的光的光电转换部分，包括以下步骤：在 基板，并且在与受光面对应的区域以外的区域中，在金属遮光层上形成光反射层，从形成在光反射层上方的负型光致抗蚀剂膜形成光阻图案层 通过进行曝光处理和显影处理，其中在形成光反射层时，光反射层包括与光致抗蚀剂图案层的图案形状对应的形状，并且光反射层形成在 这样一种在光致抗蚀剂图案层的形成中在曝光处理的导通中反射曝光光到光致抗蚀剂膜的方式。

公开(公告)号：US20100201855A1

公开(公告)日：2010-08-12

申请号：US12698314

申请日：2010-02-02

申请人： Kazushi Wada ,  Yoichi Otsuka

发明人： Kazushi Wada ,  Yoichi Otsuka

IPC分类号： H04N5/335 ,  H01L31/18 ,  H01L31/0232

CPC分类号： H01L27/14818 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14843

摘要： A method for manufacturing a solid-state imaging device, in which a photoelectric conversion portion to receive light with a light-receiving surface and generate a signal charge is disposed in a substrate, includes the steps of forming a metal light-shield layer above the substrate and in a region other than a region corresponding to the light-receiving surface, forming a light-reflection layer above the metal light-shield layer, and forming a photoresist pattern layer from a negative type photoresist film formed above the light-reflection layer, by conducting an exposing treatment and a developing treatment, wherein in the forming of the light-reflection layer, the light-reflection layer includes a shape corresponding to a pattern shape of the photoresist pattern layer, and the light-reflection layer is formed in such a way as to reflect exposure light to the photoresist film in conduction of the exposing treatment in the forming of the photoresist pattern layer.

摘要翻译： 一种制造固态成像装置的方法，其中在基板中设置有用于接收具有光接收表面并产生信号电荷的光的光电转换部分，包括以下步骤：在 基板，并且在与受光面对应的区域以外的区域中，在金属遮光层上形成光反射层，从形成在光反射层上方的负型光致抗蚀剂膜形成光阻图案层 通过进行曝光处理和显影处理，其中在形成光反射层时，光反射层包括与光致抗蚀剂图案层的图案形状对应的形状，并且光反射层形成在 这样一种在光致抗蚀剂图案层的形成中在曝光处理的导通中反射曝光光到光致抗蚀剂膜的方式。

公开(公告)号：US20080315340A1

公开(公告)日：2008-12-25

申请号：US12102328

申请日：2008-04-14

申请人： Kouichi Harada ,  Yasuhiro Ueda ,  Nobuhiko Umezu ,  Kazushi Wada ,  Yoshinori Toumiya ,  Takeshi Matsuda

发明人： Kouichi Harada ,  Yasuhiro Ueda ,  Nobuhiko Umezu ,  Kazushi Wada ,  Yoshinori Toumiya ,  Takeshi Matsuda

IPC分类号： H01L31/0232

CPC分类号： H01L27/1462 ,  H01L27/14627

摘要： A solid-state imaging device includes a layer including an on-chip lens above a sensor section, and the layer including the on-chip lens is composed of an inorganic film which transmits ultraviolet light. The layer including the on-chip lens may further include a planarizing film located below the on-chip lens. A method of fabricating a solid-state imaging device includes the steps of forming a planarizing film composed of a first inorganic film, forming a second inorganic film on the planarizing film, forming a lens-shaped resist layer on the second inorganic film, and etching back the resist layer to form an on-chip lens composed of the second inorganic film. The first inorganic film constituting the planarizing film and the second inorganic film constituting the on-chip lens preferably transmit ultraviolet light.

摘要翻译： 固态成像装置包括在传感器部分上方具有片上透镜的层，并且包括片上透镜的层由透射紫外光的无机膜构成。 包括片上透镜的层还可以包括位于片上透镜下方的平坦化膜。 制造固态成像装置的方法包括以下步骤：形成由第一无机膜构成的平坦化膜，在平坦化膜上形成第二无机膜，在第二无机膜上形成透镜形状的抗蚀剂层，以及蚀刻 将抗蚀剂层背回以形成由第二无机膜构成的片上透镜。 构成平坦化膜的第一无机膜和构成片上透镜的第二无机膜优选透射紫外光。

公开(公告)号：US08253142B1

公开(公告)日：2012-08-28

申请号：US09649570

申请日：2000-08-28

申请人： Kouichi Harada ,  Yasuhiro Ueda ,  Nobuhiko Umezu ,  Kazushi Wada ,  Yoshinori Toumiya ,  Takeshi Matsuda

发明人： Kouichi Harada ,  Yasuhiro Ueda ,  Nobuhiko Umezu ,  Kazushi Wada ,  Yoshinori Toumiya ,  Takeshi Matsuda

IPC分类号： H01L27/14

CPC分类号： H01L27/1462 ,  H01L27/14627

摘要： A solid-state imaging device includes a layer including an on-chip lens above a sensor section, and the layer including the on-chip lens is composed of an inorganic film which transmits ultraviolet light. The layer including the on-chip lens may further include a planarizing film located below the on-chip lens. A method of fabricating a solid-state imaging device includes the steps of forming a planarizing film composed of a first inorganic film, forming a second inorganic film on the planarizing film, forming a lens-shaped resist layer on the second inorganic film, and etching back the resist layer to form an on-chip lens composed of the second inorganic film. The first inorganic film constituting the planarizing film and the second inorganic film constituting the on-chip lens preferably transmit ultraviolet light.

摘要翻译： 固态成像装置包括在传感器部分上方具有片上透镜的层，并且包括片上透镜的层由透射紫外光的无机膜构成。 包括片上透镜的层还可以包括位于片上透镜下方的平坦化膜。 制造固态成像装置的方法包括以下步骤：形成由第一无机膜构成的平坦化膜，在平坦化膜上形成第二无机膜，在第二无机膜上形成透镜形状的抗蚀剂层，以及蚀刻 将抗蚀剂层背回以形成由第二无机膜构成的片上透镜。 构成平坦化膜的第一无机膜和构成片上透镜的第二无机膜优选透射紫外光。

公开(公告)号：US06809355B2

公开(公告)日：2004-10-26

申请号：US09822647

申请日：2001-03-30

申请人： Kazushi Wada

发明人： Kazushi Wada

IPC分类号： H01L27148

CPC分类号： H01L31/02164

摘要： A solid-state imaging device having a gate structure including an oxide film and a nitride film includes upper layer films (for example, a planarization film, an insulating film, and a protective film) allowing ultraviolet rays having a wavelength of 400 nm or less to pass therethrough; and a metal made shield film or an organic film capable of absorbing the ultraviolet rays formed in such a manner as to cover a region of the gate structure (for example, an output gate and a reset gate), excluding a light receiving portion and a transfer portion, of the solid-state imaging device. With this configuration, it is possible to prevent the shift of a threshold voltage Vth, and hence to enhance the reliability of the transfer or reset of electric charges.

摘要翻译： 具有包括氧化物膜和氮化物膜的栅极结构的固态成像器件包括允许具有400nm或更小的波长的紫外线的上层膜（例如平坦化膜，绝缘膜和保护膜） 通过; 以及能够吸收以覆盖栅极结构的区域（例如，输出门和复位栅极）的方式形成的紫外线的金属制的屏蔽膜或有机膜，不包括光接收部分和 传输部分。 利用这种结构，可以防止阈值电压Vth的偏移，从而提高电荷转移或复位的可靠性。

公开(公告)号：US5216489A

公开(公告)日：1993-06-01

申请号：US663428

申请日：1991-03-01

申请人： Kazuya Yonemoto ,  Tetsuya Iizuka ,  Kazushi Wada ,  Koichi Harada ,  Satoshi Nakamura

发明人： Kazuya Yonemoto ,  Tetsuya Iizuka ,  Kazushi Wada ,  Koichi Harada ,  Satoshi Nakamura

IPC分类号： H01L27/148 ,  H04N5/359 ,  H04N5/372 ,  H04N5/3722

CPC分类号： H04N3/1531 ,  H01L27/14831 ,  H04N3/1568 ,  H04N3/1575

摘要： An interline transfer or frame interline transfer CCD solid image sensor is adapted to read out signal charges from light receiving sections of a matrix array by means of vertical charge transfer sections and horizontal charge transfer sections. A plurality of horizontal charge transfer sections are formed for lowering the horizontal transfer frequency. The voltage transition in the transfer gate across the horizontal charge transfer sections is caused to occur stepwise or temporally slowly to improve the transfer efficiency across the horizontal charge transfer sections. A smear drain region for sweeping out unnecessary charges is formed along the horizontal charge transfer sections. The transfer electrode of the horizontal charge transfer sections connected to the busline wiring is patterned to clear contact holes provided in the smear drain region to provide for positive overflow without increasing the chip area.

公开(公告)号：US08217431B2

公开(公告)日：2012-07-10

申请号：US12420890

申请日：2009-04-09

申请人： Kazushi Wada ,  Kouichi Harada ,  Shuji Otsuka ,  Mitsuru Sato

发明人： Kazushi Wada ,  Kouichi Harada ,  Shuji Otsuka ,  Mitsuru Sato

IPC分类号： H01L27/148

CPC分类号： H01L27/14806

摘要： A solid-state image pickup device for preventing crosstalk between adjacent pixels by providing an overflow barrier at the deep potion of a substrate. A partial P type region is provided at the predetermined position of a lower layer region of the vertical transfer register and a channel stop region. This P type region adjusts potential in the lower layer region of the vertical transfer register and the channel stop region. Accordingly, since the potential in the lower layer region of the vertical transfer register and the channel stop region at both sides of the lower layer region is low, electric charges photoelectrically-converted by the sensor region are blocked by this potential barrier and cannot be diffused easily.

摘要翻译： 一种固态图像拾取装置，用于通过在衬底的深部处提供溢出屏障来防止相邻像素之间的串扰。 部分P型区域设置在垂直传送寄存器的下层区域的预定位置和通道停止区域。 该P型区域调整垂直传送寄存器和通道停止区域的下层区域中的电位。 因此，由于垂直传输寄存器的下层区域和下层区域两侧的沟道停止区域的电位低，所以由该传感器区域光电转换的电荷被该势垒阻挡而不能扩散 容易。

公开(公告)号：US20060163617A1

公开(公告)日：2006-07-27

申请号：US10521587

申请日：2003-08-11

申请人： Kazushi Wada ,  Kouichi Harada ,  Shuji Otsuza ,  Mitsuru Sato

发明人： Kazushi Wada ,  Kouichi Harada ,  Shuji Otsuza ,  Mitsuru Sato

IPC分类号： H01L29/768

CPC分类号： H01L27/14806

摘要： Crosstalk between the adjacent pixels can be prevented by a structure in which an overflow barrier is provided at the deep potion of a substrate. A partial P type region 150 is provided at the predetermined position of a lower layer region of the vertical transfer register 124 and a channel stop region 126. This P type region 150 is used to adjust potential in the lower layer region of the vertical transfer register 124 and the channel stop region 126 so that the potential may become smaller than that of the lower layer region of the photosensor 122 in a range from the minimum potential position of the vertical transfer register 124 to the overflow barrier 128. Accordingly, since the potential in the lower layer region of the vertical transfer register 124 and the channel stop region 126 at both sides of the lower layer region is low, electric charges photoelectrically-converted by the sensor region are blocked by this potential barrier and cannot be diffused easily. Thus, crosstalk between the adjacent pixels can be prevented.

摘要翻译： 可以通过在衬底的深部设置溢流屏障的结构来防止相邻像素之间的串扰。 部分P型区域150设置在垂直传送寄存器124的下层区域的预定位置和通道停止区域126.该P型区域150用于调整垂直传送寄存器的下层区域中的电位 124和通道停止区域126，使得在从垂直传送寄存器124的最小电位位置到溢流挡板128的范围内，电位可能变得小于光传感器122的下层区域的电位。因此，由于电位 在垂直传送寄存器124的下层区域和下层区域两侧的沟道阻挡区域126为低，由传感器区域光电转换的电荷被该势垒阻挡，并且不能容易地扩散。 因此，可以防止相邻像素之间的串扰。

公开(公告)号：US5763292A

公开(公告)日：1998-06-09

申请号：US484892

申请日：1995-06-07

申请人： Kouichi Harada ,  Junichi Furukawa ,  Kazushi Wada ,  Takaaki Sarai

发明人： Kouichi Harada ,  Junichi Furukawa ,  Kazushi Wada ,  Takaaki Sarai

IPC分类号： H01L27/148 ,  H01L21/00

CPC分类号： H01L27/14887 ,  H01L27/14806 ,  H01L27/14831

摘要： A CCD solid state imaging device can reduce a smear component. This CCD solid state imaging device comprises a plurality of photosensor sections (10) arranged in a matrix fashion, a vertical transfer register (5) having a transfer electrode (16) disposed at every column of the photosensor sections, a shunt line layer (33) connected to the transfer electrode (16) on the vertical transfer register (5), and a photo-shield layer (38) formed so as to surround the photosensor section 10 through an interlayer insulating layer (37) which covers the shunt layer (33), in which the interlayer insulating layer (37) is formed under an overhang portion (38a) of the photo-shield layer (38) to the photosensor section (10).

摘要翻译： CCD固态成像装置可以减少拖尾部件。 该CCD固态成像装置包括以矩阵方式布置的多个光电传感器部分（10），具有设置在光电传感器部分的每列处的转移电极（16）的垂直传送寄存器（5），分流线层 ）连接到垂直传送寄存器（5）上的转印电极（16），以及光掩模层（38），其通过覆盖分流层的层间绝缘层（37）形成为围绕光电传感器部分10 33），其中层间绝缘层（37）形成在光屏蔽层（38）的悬垂部分（38a）下面到光电传感器部分（10）。

公开(公告)号：US5220185A

公开(公告)日：1993-06-15

申请号：US926328

申请日：1992-08-10

申请人： Kazushi Wada

发明人： Kazushi Wada

IPC分类号： H01L27/148 ,  H01L21/339 ,  H01L29/762 ,  H01L29/768

CPC分类号： H01L29/76816 ,  H01L29/76875

摘要： A CCD shift register has a final transfer electrode which is formed only by a first polysilicon layer, and an output gate electrode which is formed by a second polysilicon layer. Under the output gate electrode, there is formed a doped region which is formed by a doping step of self alignment, independently of a doped region under the transfer electrodes. Therefore, it is possible to choose the impurity concentration and to adjust the potential level under the output gate electrode freely.