公开(公告)号：US20050233520A1

公开(公告)日：2005-10-20

申请号：US11140843

申请日：2005-05-31

申请人： Hyung-Bok Choi

发明人： Hyung-Bok Choi

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/8242

CPC分类号： H01L28/60 ,  H01L21/32136 ,  H01L28/55 ,  H01L28/75

摘要： A semiconductor device and a fabricating method for the same are disclosed, in which when forming a capacitor sacrificial film pattern, even if a misalignment occurs, the degradation of the dielectric property due to a direct contact between the contact plug and the dielectric medium can be prevented. The semiconductor device includes a connecting part connected through an insulating layer of a substrate to a conductive layer, a seed separating layer formed around the connecting part and the insulating layer to provide an open region exposing at least part of the connecting part, a seed layer filled into the open region of the seed separating layer and a capacitor. The capacitor includes of a lower electrode formed upon the seed layer, a dielectric medium formed upon the lower electrode, and an upper electrode formed upon the dielectric medium.

摘要翻译： 公开了一种半导体器件及其制造方法，其中当形成电容器牺牲膜图案时，即使发生不对准，由于接触插塞和电介质之间的直接接触导致的介电性质的劣化可以是 防止了 半导体器件包括通过衬底的绝缘层连接到导电层的连接部分，围绕连接部分形成的晶种分离层和绝缘层，以提供暴露连接部分的至少一部分的开放区域，种子层 填充到种子分离层的开放区域和电容器中。 电容器包括形成在种子层上的下电极，形成在下电极上的电介质和形成在电介质上的上电极。