公开(公告)号：US20230121705A1

公开(公告)日：2023-04-20

申请号：US18085228

申请日：2022-12-20

Applicant: Micron Technology, Inc.

Inventor： Dung V. Nguyen ,  Phone Sy Nguyen

IPC: G11C16/10 ,  G11C16/26 ,  G11C7/10 ,  G11C16/30

Abstract: A command to program data to a memory device is received. Target charge levels of a set of memory cells in the memory device for a first programming step are determined based on the data. A first set of indicators are provided to the memory device. The first set of indicators indicate the target charge levels for the first programming step. Target charge levels of the set of memory cells for a second programming step are determined based on the data. A second set of indicators are provided to the memory device. The second set of indicators indicate the target charge levels for the second programming step.