Abstract:
A method of processing a polysilicon-comprising composition comprises forming a first wall comprising at least one recess in polysilicon. A second wall comprising polysilicon is formed. Material other than polysilicon is deposited within the at least one recess and over the polysilicon of the second wall. The material is etched selectively relative to polysilicon to expose polysilicon of the second wall and to leave the material within the at least one recess in the first wall. The exposed polysilicon of the second wall is etched selectively relative to the material within the at least one recess in the first wall. Other methods are disclosed.
Abstract:
Some embodiments include utilization of both plasma and aerosol to treat substrate surfaces. The plasma and aerosol may be utilized simultaneously, or sequentially. In some embodiments, the plasma forms a plasma sheath over the substrate surfaces, with the plasma sheath having an electric field gradient therein. The aerosol comprises liquid particles charged to a polarity, and such polarity is transferred to contaminants on the substrate surfaces through interaction with the aerosol. The polarity may be used to assist in dislodging the contaminants from the substrate surfaces. The electric field of the plasma sheath may then sweep the contaminants away from the substrate surfaces. In some embodiments, multiple different aerosols are formed to remove multiple different types of materials from substrate surfaces. Some embodiments include apparatuses configured for treating substrate surfaces with both plasma and aerosol.