公开(公告)号：US20200304113A1

公开(公告)日：2020-09-24

申请号：US16085870

申请日：2018-08-01

Applicant: Micron Technology, Inc.

Inventor： Hiroshi Akamatsu ,  Zhi Qi Huang

IPC: H03K5/134 ,  H03K5/131 ,  G11C11/408

Abstract: Methods and apparatus for generating a delayed output signal from an input signal applied to an RC delay circuit of a semiconductor device during an active mode. The RC delay circuit is configured to pull up a voltage level on a node responsive to a reset signal during a stand-by mode.

公开(公告)号：US10373670B1

公开(公告)日：2019-08-06

申请号：US15923235

申请日：2018-03-16

Applicant: Micron Technology, Inc.

Inventor： Zhi Qi Huang ,  Wei Lu Chu ,  Hiromasa Noda ,  Dong Pan

IPC: G11C5/14 ,  G11C11/4076 ,  G11C11/4072 ,  G11C11/4074

Abstract: A memory device includes a memory array including a plurality of memory cells; and an array timer coupled to the memory array, configured to generate an output timing signal based on a V-I stable input and an analog reference signal, wherein: the V-I stable input is from a bandgap supply circuit, the analog reference signal is from an analog reference block, and the output timing signal is configured to control the memory array.