公开(公告)号：US09275695B2

公开(公告)日：2016-03-01

申请号：US14506768

申请日：2014-10-06

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Chin-Hung Chang ,  Chia-Jung Chen ,  Su-Chueh Lo ,  Ken-Hui Chen ,  Kuen-Long Chang

IPC: G11C7/12 ,  G11C7/10 ,  G11C7/08 ,  G11C7/18 ,  G11C7/06

CPC classification number: G11C7/1048 ,  G11C7/06 ,  G11C7/08 ,  G11C7/106 ,  G11C7/12 ,  G11C7/18 ,  G11C2207/002

Abstract: A read operation for a memory device is provided. A selected word line, first and second global bit line groups and a selected first bit line group are precharged. A first cell current flowing through the selected word line, the first and the selected first bit line groups is generated. A first reference current flowing through the second global bit line group is generated. A first half page data is read based on the first cell current and the first reference current. The selected word line, the first and the second global bit line groups are kept precharged.

Abstract translation: 提供了存储器件的读取操作。 选择的字线，第一和第二全局位线组和所选择的第一位线组被预先充电。 流过所选字线的第一单元电流，产生第一和所选择的第一位线组。 产生流过第二全局位线组的第一参考电流。 基于第一单元电流和第一参考电流来读取前​​半页数据。 所选择的字线，第一和第二全局位线组保持预充电。