ECC method for double pattern flash memory

    公开(公告)号:US09760434B2

    公开(公告)日:2017-09-12

    申请号:US14841950

    申请日:2015-09-01

    CPC classification number: G06F11/1068 G06F11/1052 G11C29/52 G11C2029/0411

    Abstract: A method of operating a memory device storing ECCs for corresponding data is provided. The method includes writing an extended ECC during a first program operation, the extended ECC including an ECC and an extended bit derived from the ECC. The method includes overwriting the extended ECC with a pre-determined state during a second program operation to indicate the second program operation. The method includes, setting the ECC to an initial ECC state before the first program operation; during the first program operation, computing the ECC, changing the ECC to the initial ECC state if the computed ECC equals the pre-determined state; and changing the extended bit to an initial value if the ECC equals the initial ECC state. The method includes reading an extended ECC including an extended bit and an ECC for corresponding data, and determining whether to enable ECC logic using the extended ECC.

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