公开(公告)号：US20070030073A1

公开(公告)日：2007-02-08

申请号：US11540510

申请日：2006-10-02

申请人： Kenji Tahara ,  Takayuki Tsutsui ,  Tetsuaki Adachi

发明人： Kenji Tahara ,  Takayuki Tsutsui ,  Tetsuaki Adachi

IPC分类号： H03G3/10

CPC分类号： H03F1/0211 ,  H03F2200/408 ,  H03G3/3047

摘要： Providing a high frequency power amplifier circuit and a radio communication system which can control output power by a power voltage, produce sufficient output power in high regions of demanded output power and improve power efficiency in low regions of demanded output power. In a high frequency power amplifier circuit (RF power module) which comprises two or more cascaded FETs for amplification and controls output power by controlling power voltages of the FETs for amplification to gate terminals of which bias voltages of a predetermined level are applied, different transistors for power voltage control are provided for a last-stage FET for amplification and preceding-stage FETs for amplification. The transistors for power voltage control generate and apply the power voltage so that the preceding-stage FETs for amplification saturate when a demanded output level is relatively low.

公开(公告)号：US07123094B2

公开(公告)日：2006-10-17

申请号：US10821935

申请日：2004-04-12

申请人： Kenji Tahara ,  Takayuki Tsutsui ,  Tetsuaki Adachi

发明人： Kenji Tahara ,  Takayuki Tsutsui ,  Tetsuaki Adachi

IPC分类号： H03G3/30

CPC分类号： H03F1/0211 ,  H03F2200/408 ,  H03G3/3047

摘要： Providing a high frequency power amplifier circuit and a radio communication system which can control output power by a power voltage, produce sufficient output power in high regions of demanded output power and improve power efficiency in low regions of demanded output power. In a high frequency power amplifier circuit (RF power module) which comprises two or more cascaded FETs for amplification and controls output power by controlling power voltages of the FETs for amplification to gate terminals of which bias voltages of a predetermined level are applied, different transistors for power voltage control are provided for a last-stage FET for amplification and preceding-stage FETs for amplification. The transistors for power voltage control generate and apply the power voltage so that the preceding-stage FETs for amplification saturate when a demanded output level is relatively low.

摘要翻译： 提供可以通过电源电压来控制输出功率的高频功率放大器电路和无线电通信系统，在需求输出功率的高区域产生足够的输出功率，并提高所需输出功率的低区域的功率效率。 在一个高频功率放大器电路（RF功率模块）中，包括两个或更多级联的FET，用于放大，并通过控制用于放大到预定电平的偏置电压的栅极端子的FET的电源电压来控制输出功率，不同的晶体管 为用于放大的最后一级FET和用于放大的前级FET提供电源电压控制。 用于电源电压控制的晶体管产生并施加电源电压，使得当需求输出电平相对较低时，用于放大的前级FET饱和。