公开(公告)号：US11107831B2

公开(公告)日：2021-08-31

申请号：US16700877

申请日：2019-12-02

Applicant: Micron Technology, Inc.

Inventor： John D. Hopkins ,  Justin B. Dorhout ,  Nirup Bandaru ,  Damir Fazil ,  Nancy M. Lomeli ,  Jivaan Kishore Jhothiraman ,  Purnima Narayanan

IPC: H01L21/8229 ,  H01L27/11582 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11519

Abstract: Some embodiments include an integrated assembly having a first deck which has first memory cells, and having a second deck which has second memory cells. The first memory cells have first control gate regions which include a first conductive material vertically between horizontally-extending bars of a second conductive material. The second memory cells have second control gate regions which include a fourth conductive material along an outer surface of a third conductive material. A pillar passes through the first and second decks. The pillar includes a dielectric-barrier material laterally surrounding a channel material. The first and fourth materials are directly against the dielectric-barrier material. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US20210013228A1

公开(公告)日：2021-01-14

申请号：US17032384

申请日：2020-09-25

Applicant: Micron Technology, Inc.

Inventor： John D. Hopkins ,  Nancy M. Lomeli ,  Justin B. Dorhout ,  Damir Fazil

IPC: H01L27/11582 ,  H01L27/11524 ,  H01L27/11573 ,  H01L27/11529 ,  H01L27/1157 ,  H01L27/11556

Abstract: Device, systems, and structures include a stack of vertically-alternating tiers of materials arranged in one or more decks of tiers. A channel opening, in which a channel pillar may be formed, extends through the stack. The pillar includes a “shoulder portion” extending laterally into an “undercut portion” of the channel opening, which undercut portion is defined along at least a lower tier of at least one of the decks of the stack.

公开(公告)号：US10825828B2

公开(公告)日：2020-11-03

申请号：US16157927

申请日：2018-10-11

Applicant: Micron Technology, Inc.

Inventor： John D. Hopkins ,  Nancy M. Lomeli ,  Justin B. Dorhout ,  Damir Fazil

IPC: H01L27/115 ,  H01L29/792 ,  H01L29/66 ,  H01L27/11582 ,  H01L27/11524 ,  H01L27/11573 ,  H01L27/11529 ,  H01L27/1157 ,  H01L27/11556

Abstract: Device, systems, and structures include a stack of vertically-alternating tiers of materials arranged in one or more decks of tiers. A channel opening, in which a channel pillar may be formed, extends through the stack. The pillar includes a “shoulder portion” extending laterally into an “undercut portion” of the channel opening, which undercut portion is defined along at least a lower tier of at least one of the decks of the stack.

公开(公告)号：US20200119038A1

公开(公告)日：2020-04-16

申请号：US16157927

申请日：2018-10-11

Applicant: Micron Technology, Inc.

Inventor： John D. Hopkins ,  Nancy M. Lomeli ,  Justin B. Dorhout ,  Damir Fazil

IPC: H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/1157 ,  H01L27/11573

Abstract: Device, systems, and structures include a stack of vertically-alternating tiers of materials arranged in one or more decks of tiers. A channel opening, in which a channel pillar may be formed, extends through the stack. The pillar includes a “shoulder portion” extending laterally into an “undercut portion” of the channel opening, which undercut portion is defined along at least a lower tier of at least one of the decks of the stack.