公开(公告)号：US20210257298A1

公开(公告)日：2021-08-19

申请号：US16790148

申请日：2020-02-13

Applicant: Micron Technology, Inc.

Inventor： Lifang Xu ,  Jian Li ,  Graham R. Wolstenholme ,  Paolo Tessariol ,  George Matamis ,  Nancy M. Lomeli

IPC: H01L23/528 ,  H01L23/522 ,  H01L21/768

Abstract: Microelectronic devices include stadium structures within a stack structure and substantially symmetrically distributed between a first pillar structure and a second pillar structure, each of which vertically extends through the stack structure. The stack structure includes a vertically alternating sequence of insulative materials and conductive materials arranged in tiers. Each of the stadium structures includes staircase structures having steps including lateral ends of some of the tiers. The substantially symmetrical distribution of the stadium structures, and fill material adjacent such structures, may substantially balance material stresses to avoid or minimize bending of the adjacent pillars. Related methods and systems are also disclosed.

公开(公告)号：US20210082806A1

公开(公告)日：2021-03-18

申请号：US16574417

申请日：2019-09-18

Applicant: Micron Technology, Inc.

Inventor： John D. Hopkins ,  George Matamis

IPC: H01L23/522 ,  H01L23/528 ,  H01L27/11582 ,  H01L27/1157 ,  H01L27/11565 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556

Abstract: Some embodiments include an assembly having a memory stack which includes dielectric levels and conductive levels. A select gate structure is over the memory stack. A trench extends through the select gate structure. The trench has a first side and an opposing second side, along a cross-section. The trench splits the select gate structure into a first select gate configuration and a second select gate configuration. A void is within the trench and is laterally between the first and second select gate configurations. Channel material pillars extend through the memory stack. Memory cells are along the channel material pillars.