公开(公告)号：US06521538B2

公开(公告)日：2003-02-18

申请号：US09790888

申请日：2001-02-23

申请人： Hajime Soga ,  Kenji Kondo ,  Eiji Ishikawa ,  Yoshikazu Sakano ,  Mikimasa Suzuki

发明人： Hajime Soga ,  Kenji Kondo ,  Eiji Ishikawa ,  Yoshikazu Sakano ,  Mikimasa Suzuki

IPC分类号： H01L21311

CPC分类号： H01L29/7813 ,  H01L21/76232 ,  H01L21/763 ,  H01L29/4236 ,  H01L29/66348

摘要： In a method for manufacturing a semiconductor device, first, a trench is formed on a semiconductor substrate by anisotropic etching, and a reaction product is produced and deposited on the inner wall of the trench during the anisotropic etching. Then, isotropic etching is performed to round a corner of a bottom portion of the trench without removing the reaction product. The isotropic etching can round the corner of the trench without etching the side wall of the trench that is covered by the reaction product.

摘要翻译： 在制造半导体器件的方法中，首先，通过各向异性蚀刻在半导体衬底上形成沟槽，并且在各向异性蚀刻期间，在沟槽的内壁上产生并沉积反应产物。 然后，进行各向同性蚀刻，以在沟槽的底部的一个角部周围，而不去除反应产物。 各向同性蚀刻可以围绕沟槽的角落，而不蚀刻由反应产物覆盖的沟槽的侧壁。

公开(公告)号：US5503878A

公开(公告)日：1996-04-02

申请号：US292050

申请日：1994-08-18

申请人： Mikimasa Suzuki ,  Makio Iida ,  Makoto Muto

发明人： Mikimasa Suzuki ,  Makio Iida ,  Makoto Muto

IPC分类号： H01C17/06 ,  H01C17/12 ,  H01L21/02 ,  H01L21/822 ,  H01L27/04 ,  H05H1/00

CPC分类号： H01L28/24

摘要： A method of preparing a patterned thin film resistor that is appropriately used in combination with semiconductor devices. The method comprises a thin film forming step comprising forming a thin film of a compound comprising at least one metal on an oxide film such as a silicon oxide film; a masking step comprising covering a desired area of the thin film by an organic material; a patterning step comprising converting to plasma a gas mixture comprising a fluorine compound gas and oxygen, and removing an area of the thin film, that is not covered by the organic material by exposing it to a gas containing activated fluorine by the plasma conversion; and a removing step comprising removing the organic material remaining on the desired area of the thin film.

摘要翻译： 一种制备适合与半导体器件组合使用的图案化薄膜电阻器的方法。 该方法包括薄膜形成步骤，包括在诸如氧化硅膜的氧化膜上形成包含至少一种金属的化合物的薄膜; 掩模步骤，包括用有机材料覆盖所述薄膜的期望区域; 一种图形化步骤，包括将包含氟化合物气体和氧气的气体混合物转化成等离子体，并且通过用等离子体转换将其暴露于含有活性氟的气体中来除去未被有机材料覆盖的薄膜区域; 以及去除步骤，包括去除残留在所述薄膜的所需区域上的有机材料。