公开(公告)号：US06521538B2

公开(公告)日：2003-02-18

申请号：US09790888

申请日：2001-02-23

申请人： Hajime Soga ,  Kenji Kondo ,  Eiji Ishikawa ,  Yoshikazu Sakano ,  Mikimasa Suzuki

发明人： Hajime Soga ,  Kenji Kondo ,  Eiji Ishikawa ,  Yoshikazu Sakano ,  Mikimasa Suzuki

IPC分类号： H01L21311

CPC分类号： H01L29/7813 ,  H01L21/76232 ,  H01L21/763 ,  H01L29/4236 ,  H01L29/66348

摘要： In a method for manufacturing a semiconductor device, first, a trench is formed on a semiconductor substrate by anisotropic etching, and a reaction product is produced and deposited on the inner wall of the trench during the anisotropic etching. Then, isotropic etching is performed to round a corner of a bottom portion of the trench without removing the reaction product. The isotropic etching can round the corner of the trench without etching the side wall of the trench that is covered by the reaction product.

摘要翻译： 在制造半导体器件的方法中，首先，通过各向异性蚀刻在半导体衬底上形成沟槽，并且在各向异性蚀刻期间，在沟槽的内壁上产生并沉积反应产物。 然后，进行各向同性蚀刻，以在沟槽的底部的一个角部周围，而不去除反应产物。 各向同性蚀刻可以围绕沟槽的角落，而不蚀刻由反应产物覆盖的沟槽的侧壁。

公开(公告)号：US6090718A

公开(公告)日：2000-07-18

申请号：US992108

申请日：1997-12-17

申请人： Hajime Soga ,  Kenji Kondo ,  Eiji Ishikawa ,  Yoshikazu Sakano ,  Yuji Ichikawa

发明人： Hajime Soga ,  Kenji Kondo ,  Eiji Ishikawa ,  Yoshikazu Sakano ,  Yuji Ichikawa

IPC分类号： C23F4/00 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01H21/302

CPC分类号： H01L21/67069 ,  Y10S438/905 ,  Y10S438/906

摘要： After performing an etching process with respect to one substrate, the substrate is taken out from an etching chamber. Then, a dummy substrate is disposed in the etching chamber and a cleaning process is performed. The cleaning process includes a cleaning step for etching reaction products produced during the etching process to be removed, a seasoning step for adjusting the atmosphere within the etching chamber and the temperature of the substrate, and a purge step for removing suspended foreign materials without generating plasma. By performing the cleaning process, the successive etching process can be performed without generating any black silicon on the substrate, thereby attaining a high production yield.

摘要翻译： 在对一个基板进行蚀刻处理之后，从蚀刻室取出基板。 然后，在蚀刻室内设置虚设基板，进行清洗处理。 清洗过程包括用于蚀刻在要除去的蚀刻工艺期间产生的反应产物的清洁步骤，用于调节蚀刻室内的气氛的调节步骤和基板的温度，以及用于清除悬浮的异物而不产生等离子体的吹扫步骤 。 通过进行清洗处理，可以在基板上不产生任何黑色硅的情况下进行连续蚀刻处理，从而获得高产率。

公开(公告)号：US06482701B1

公开(公告)日：2002-11-19

申请号：US09630786

申请日：2000-08-02

申请人： Eiji Ishikawa ,  Kenji Kondo ,  Hajime Soga

发明人： Eiji Ishikawa ,  Kenji Kondo ,  Hajime Soga

IPC分类号： H01L21336

CPC分类号： H01L29/66348 ,  H01L21/3065

摘要： A method of manufacturing a trench gate type IGBT element, which can sufficiently round off a corner at a bottom of a trench with restricting silicon from being excessively etched. A trench is formed at a surface of a P+-type monocrystalline silicon substrate by conducting an anisotropic etching (STEP 1). A corner portion at a bottom of the trench is formed to a concave shape surface by conducting a concave etching (STEP 2). The concave etching etches the silicon substrate so that a diameter of the trench is gradually reduced as the etching advances. After that, the corner portion at a bottom of the trench is rounded off by conducting an isotropic etching (STEP 3). Since the corner portion is chamfered, a radius of curvature of the corner portion of the bottom of the trench can be increased even if an amount of the etching using the isotropic etching in the STEP 3 is small.

摘要翻译： 一种制造沟槽栅型IGBT元件的方法，其可以使沟槽的底部的拐角充分地圆形化，从而限制硅的过度蚀刻。 通过进行各向异性蚀刻在P +型单晶硅衬底的表面上形成沟槽（步骤1）。 通过进行凹蚀刻将沟槽底部的角部形成为凹形表面（步骤2）。 凹蚀刻蚀刻硅衬底，使得随着蚀刻的进行，沟槽的直径逐渐减小。 之后，通过进行各向同性蚀刻使沟槽底部的角部被倒圆（步骤3）。 由于角部被倒角，即使在步骤3中使用各向同性蚀刻的蚀刻量少的情况下，沟槽底部的角部的曲率半径也可以增加。

公开(公告)号：US06797588B2

公开(公告)日：2004-09-28

申请号：US10108443

申请日：2002-03-29

申请人： Eiji Ishikawa ,  Takaaki Aoki ,  Kenji Kondo

发明人： Eiji Ishikawa ,  Takaaki Aoki ,  Kenji Kondo

IPC分类号： H01L2176

CPC分类号： H01L29/7813 ,  H01L21/76235 ,  H01L21/823487 ,  H01L29/0657 ,  H01L29/42368 ,  H01L29/511 ,  H01L29/66348 ,  H01L29/7397

摘要： A surface of a semiconductor substrate is selectively etched to form a first opening, which serves as the opening of a trench. A USG film is deposited on the first opening. A second opening, the width of which is smaller than that of the first opening, is formed in the USG film within the first opening. An inner section of the trench is formed by etching while using the USG film as a mask. The inner surface of the inner region is thermally oxidized to form a silicon oxide film, and a gate insulating film is made by the silicon oxide film and the USG film. A gate electrode is formed in the trench. The gate insulating film is relatively thick at the opening of the trench, so the breakdown voltage at the opening of the trench is increased.

摘要翻译： 选择性地蚀刻半导体衬底的表面以形成用作沟槽开口的第一开口。 USG胶片沉积在第一个开口处。 在第一开口内的USG膜中形成第二开口，其宽度小于第一开口的宽度。 在使用USG膜作为掩模的同时通过蚀刻形成沟槽的内部。 内部区域的内表面被热氧化以形成氧化硅膜，并且通过氧化硅膜和USG膜制成栅极绝缘膜。 在沟槽中形成栅电极。 栅极绝缘膜在沟槽的开口处相对较厚，因此沟槽开口处的击穿电压增加。

公开(公告)号：US07684713B2

公开(公告)日：2010-03-23

申请号：US11593591

申请日：2006-11-07

申请人： Yoshikazu Terayama ,  Noriaki Mizuguchi ,  Eiji Ishikawa ,  Takashi Toyomaki ,  Kenichi Kaburagi ,  Takeshi Hoshida ,  Jens Rasmussen ,  Akihiko Isomura

发明人： Yoshikazu Terayama ,  Noriaki Mizuguchi ,  Eiji Ishikawa ,  Takashi Toyomaki ,  Kenichi Kaburagi ,  Takeshi Hoshida ,  Jens Rasmussen ,  Akihiko Isomura

IPC分类号： H04B10/00

CPC分类号： H04B10/66

摘要： A calculation processing unit controls temperature of a Peltier device based on a slope of a waveform obtained by subtracting a waveform of a B-arm monitoring signal from a waveform of an A-arm monitoring signal and a value obtained by subtracting a value B of the B-arm monitoring signal from a value A of the A-arm monitoring signal. Similarly, the calculation processing unit controls a phase of the A-arm and a phase of the B-arm. An A-arm side micro-controller controls temperature of an A-arm side heater 22 based on the value of the A-arm monitoring signal, and controls the phase of the A-arm. A B-arm side micro-controller controls temperature of a B-arm side heater based on the value B of the B-arm monitoring signal, and controls the phase of the B-arm.

摘要翻译： 计算处理单元基于通过从A臂监视信号的波形中减去B臂监视信号的波形而获得的波形的斜率，以及通过从A臂监视信号的波形中减去B的值得到的值来控制珀耳帖装置的温度 B臂监控信号从A臂A值监控信号。 类似地，计算处理单元控制A臂的相位和B臂的相位。 A臂侧微型控制器基于A臂监视信号的值来控制A臂侧加热器22的温度，并且控制A臂的相位。 B臂侧微控制器基于B臂监控信号的值B控制B臂侧加热器的温度，并控制B臂的相位。

公开(公告)号：US07642194B2

公开(公告)日：2010-01-05

申请号：US11505375

申请日：2006-08-17

申请人： Yuji Kato ,  Eiji Ishikawa ,  Yutaka Kudou ,  Satoshi Tani ,  Kazuo Takata

发明人： Yuji Kato ,  Eiji Ishikawa ,  Yutaka Kudou ,  Satoshi Tani ,  Kazuo Takata

IPC分类号： H01L21/302

CPC分类号： H01L21/3065 ,  H01J37/32192 ,  H01J37/32623 ,  H01J37/32678

摘要： A method of etching for forming a groove in a SOI substrate includes a forming step, in which a mixed gas plasma is formed by using a mixed gas of a fluorinate gas and an oxygenic gas, and an applying step, in which a high-frequency bias is intermittently applied to the SOI substrate. In the applying step, the high-frequency bias is a temporally modulated high-frequency electricity. According to the method of etching, a yielding rate and a productivity can be improved.

摘要翻译： 在SOI衬底中形成沟槽的蚀刻方法包括：通过使用氟化物气体和含氧气体的混合气体形成混合气体等离子体的形成工序和施加工序，其中高频 偏压被间歇地施加到SOI衬底。 在施加步骤中，高频偏置是时间调制的高频电。 根据蚀刻方法，可以提高屈服率和生产率。

公开(公告)号：US07251072B2

公开(公告)日：2007-07-31

申请号：US10635723

申请日：2003-08-07

申请人： Toshihiro Ohtani ,  Tsukasa Takahashi ,  Eiji Ishikawa ,  Hiroto Ikeda ,  Hiroyuki Deguchi

发明人： Toshihiro Ohtani ,  Tsukasa Takahashi ,  Eiji Ishikawa ,  Hiroto Ikeda ,  Hiroyuki Deguchi

IPC分类号： H04B10/17

CPC分类号： H04B10/2937 ,  H01S3/302 ,  H04B10/0775 ,  H04B10/2916 ,  H04B2210/078 ,  H04B2210/08

摘要： A reliable optical transmission system with an improved signal control mechanism that avoids abrupt power variations of light beams, thereby preventing optical supervisory channel (OSC) signals from experiencing errors. An optical amplifier amplifies main signals under the control of an optical amplifier controller, which spends a first predetermined time to raise the output power of the optical amplifier up to a desired level. A pump light source produces a pump beam for injection to a fiber-optic transmission line so as to make it serve as an amplifying medium. The pump light source is controlled by a pump light source controller that spends a second predetermined time to raise the pump beam to a desired power level. This stepwise start-up process of the amplifier power and pump beam power prevents OSC signals from experiencing abrupt power variations.

摘要翻译： 一种具有改进的信号控制机制的可靠的光传输系统，其避免了光束的突然功率变化，从而防止光监控信道（OSC）信号经历错误。 光放大器在光放大器控制器的控制下放大主信号，光放大器控制器花费第一预定时间将光放大器的输出功率提高到期望的水平。 泵浦光源产生用于注射到光纤传输线的泵浦光束，以使其用作放大介质。 泵浦光源由泵浦光源控制器控制，泵控制器花费第二预定时间将泵浦光束升高到期望的功率水平。 放大器功率和泵浦波束功率的逐步启动过程防止OSC信号经历突然的功率变化。

公开(公告)号：US06750965B2

公开(公告)日：2004-06-15

申请号：US10161247

申请日：2002-05-31

申请人： Hiroshi Ando ,  Eiji Ishikawa

发明人： Hiroshi Ando ,  Eiji Ishikawa

IPC分类号： G01J302

CPC分类号： G02B7/1825 ,  G01J3/12

摘要： There is provided a mirror supporting structure for a monochromator capable of turning the mirrors about axis lines which cross each other, thereby adjusting the attachment angles of the mirrors in two directions. The mirror supporting structure for a monochromator comprises first angle adjusting means for turning the mirrors about each first axis line which does not cross each plane direction of the mirrors and second angle adjusting means for turning the mirrors about each second axis line which does not cross each plane direction of the mirrors at right angles but is parallel with a line crossing the first axis line. The first angle adjusting means comprises a first leg member and a second leg member which are disposed to be spaced from each other, and a support member installed between the first leg member and the second leg member and supporting the mirrors, and wherein the mirrors are supported by the support member in a manner that each plane direction of the mirrors does not cross the installing direction of the support member at right angles, and the support member can be turned about a line which is parallel with the installing direction of the support member.

摘要翻译： 提供了一种用于单色器的反射镜支撑结构，其能够绕相互交叉的轴线转动反射镜，从而在两个方向上调整反射镜的附着角度。 用于单色仪的反射镜支撑结构包括第一角度调节装置，用于围绕不跨过反射镜的每个平面方向的每个第一轴线转动反射镜;以及第二角度调节装置，用于将镜子围绕不相交的每个第二轴线转动 反射镜的平面方向成直角，但是与穿过第一轴线的线平行。 第一角度调节装置包括彼此分开设置的第一腿部构件和第二腿部构件，以及安装在第一腿部构件和第二腿部构件之间并支撑反射镜的支撑构件，并且其中反射镜是 由支撑构件支撑，使得反射镜的每个平面方向不以直角跨过支撑构件的安装方向，并且支撑构件可以围绕与支撑构件的安装方向平行的线旋转 。

公开(公告)号：US5888834A

公开(公告)日：1999-03-30

申请号：US548128

申请日：1995-10-25

申请人： Eiji Ishikawa ,  Hidetaka Nakamoto ,  Satoshi Tanaka

发明人： Eiji Ishikawa ,  Hidetaka Nakamoto ,  Satoshi Tanaka

IPC分类号： B01L3/00 ,  C12M1/34 ,  G01N33/53 ,  G01N33/543 ,  G01N21/00 ,  G01N31/22

CPC分类号： B01L3/5085 ,  G01N33/5304 ,  G01N33/54306 ,  Y10S435/961 ,  Y10S436/807 ,  Y10S436/81 ,  Y10S436/824

摘要： An immunoassay plate for an immune complex transfer immunoassay, comprising a well type solid phase and a dip stick type solid phase which can be inserted into said well type solid phase, wherein the dip stick type solid phase is coated with either substance (A) or (B) to be mentioned below and the well type solid phase is coated with the other, remaining substance, and these solid phases are used as the two solid phases to be used for an immune complex transfer immunoassay:(A): a substance having a reactive group which specifically binds to a functional group previously introduced onto a substance, which specifically forms an immune complex with a test substance(B): a substance having a reactive group capable of specifically binding to the test substance in the immune complex, a substance which specifically forms an immune complex with the test substance, or a functional group conjugated in advance with said substance, provided that the moiety which binds to the reactive group of (A) does not bind to the reactive group of (B) and vice versa. According to the present invention, an immune complex transfer immunoassay can be markedly simplified. Consequently, a highly sensitive immune complex transfer immunoassay can be conducted with ease and with high precision.

摘要翻译： 一种用于免疫复合物转移免疫测定的免疫测定板，包括井型固相和浸渍棒型固相，其可以插入所述孔型固相中，其中浸渍棒型固相用物质（A）或 （B），井型固相被另外的剩余物质包覆，这些固相用作免疫复合物转移免疫测定中使用的两个固相：（A）：具有 特异性结合预先引入到与测试物质（B）形成免疫复合物的物质上的官能团的反应性基团：具有能够与免疫复合物中的测试物质特异性结合的反应性基团的物质， 与试验物质特异性形成免疫复合物的物质或与所述物质预先缀合的官能团，条件是结合（A ）不与（B）的反应性基团结合，反之亦然。 根据本发明，可以显着简化免疫复合物转移免疫测定。 因此，可以容易且高精度地进行高度灵敏的免疫复合物转移免疫测定。

公开(公告)号：US5236830A

公开(公告)日：1993-08-17

申请号：US431476

申请日：1989-11-03

申请人： Eiji Ishikawa

发明人： Eiji Ishikawa

IPC分类号： G01N33/543

CPC分类号： G01N33/543 ,  Y10S436/822

摘要： A method of assay for antigen comprising the following sequential steps (A), (B), (C) and (D):(A): the antigen to be assayed in a subject solution is bound with a functional group or marker to form a modified antigen;(B): the modified antigen is bound to a carrier via an antibody against the antigen, and then the carrier is separated from the subject solution;(C): Either (a) or (b):(a) the modified antigen is dissociated from the carrier; or(b) the modified antigen-antibody complex comprising the modified antigen and the antibody against the antigen is dissociated from the carrier; and(D): the modified antigen or modified antigen-antibody complex of Step (C) is assayed.This method permits assay for antigens with high sensitivity based on characteristic features of the sandwich method, using an antibody against a single epitopic site, and also permits assay for low molecular substances, which have never been assayed by the conventional sandwich method, with higher sensitivity in comparison with the conventional competitive method.