公开(公告)号：US20150123200A1

公开(公告)日：2015-05-07

申请号：US14500840

申请日：2014-09-29

Applicant: NXP B.V.

Inventor： Liang Yan ,  Roel Daamen ,  Anco Heringa ,  Erwin Hijzen

IPC: H01L25/07 ,  H01L29/78 ,  H01L29/06 ,  H01L23/367

CPC classification number: H01L25/072 ,  H01L23/3677 ,  H01L27/0211 ,  H01L27/1203 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/7824 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An integrated heat sink array is introduced in SOI power devices having multiple unit cells, which can be used to reduce the temperature rise in obtaining more uniform temperature peaks for all the unit cells across the device area, so that the hot spot which is prone to breakdown can be avoided, thus the safe operating area of the device can be improved. Also the array sacrifice less area of the device, therefore results in low Rdson.