公开(公告)号：US09660134B1

公开(公告)日：2017-05-23

申请号：US15094639

申请日：2016-04-08

Applicant: Palo Alto Research Center Incorporated

Inventor： John E. Northrup ,  Thomas Wunderer ,  Jeng Ping Lu ,  Noble M Johnson

IPC: H01L29/12 ,  H01L21/338 ,  H01L33/00

CPC classification number: H01L33/0016 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/861 ,  H01L33/02 ,  H01L33/32

Abstract: A polarization controlled device has a first layer comprising a group III-nitride semiconductor substrate or template; a second group III-nitride semiconductor layer disposed over the group III-nitride semiconductor substrate or template; a third group III-nitride semiconductor layer disposed over the second group III-nitride semiconductor layer; and a fourth group III-nitride semiconductor layer disposed over the third group III-nitride semiconductor layer. A pn junction is formed at an interface between the third and fourth group III-nitride semiconductor layers. A polarization heterojunction is formed between the second group III-nitride semiconductor layer and the third group III-nitride semiconductor layer. The polarization junction has fixed charges of a polarity on one side of the polarization junction and fixed charges of an opposite polarity on an opposite side of the polarization junction. When unbiased, the pn junction comprises a first electric field that opposes the flow of carriers across the pn junction and the polarization junction comprises a second electric field that opposes the flow of oppositely charged carriers across the polarization junction.