公开(公告)号：US20140112061A1

公开(公告)日：2014-04-24

申请号：US13656593

申请日：2012-10-19

Applicant: QUALCOMM INCORPORATED

Inventor： Changho Jung ,  Nishith Desai ,  Sei Seung Yoon

IPC: G11C7/00

CPC classification number: G11C11/418 ,  G11C8/08 ,  G11C11/419

Abstract: A write-assisted memory. The write-assisted memory includes a word-line decoder that is implemented within a low VDD power domain. The write-assisted memory also includes a write-segment controller that is partially implemented within the low VDD power domain and is partially implemented within a high VDD power domain. The write-assisted memory further includes a local write word-line decoder that is implemented within the high VDD power domain.

Abstract translation: 写辅助记忆。 写辅助存储器包括在低VDD功率域内实现的字线解码器。 写辅助存储器还包括写入段控制器，其部分地在低VDD功率域内实现，并且部分地在高VDD功率域内实现。 写辅助存储器还包括在高VDD功率域内实现的本地写字线解码器。