公开(公告)号：US08658475B1

公开(公告)日：2014-02-25

申请号：US13860209

申请日：2013-04-10

Applicant: RF Micro Devices, Inc.

Inventor： Daniel Charles Kerr

IPC: H01L27/10 ,  H01L29/00

CPC classification number: H01L21/823481 ,  H01L21/823425 ,  H01L27/0207 ,  H01L27/1203

Abstract: The present disclosure relates to a stacked body-contacted field effect transistor (FET) that includes multiple body-contacted FETs coupled in series and a lateral isolation band encircling a periphery of the multiple FETs. The multiple FETs include a first end FET having a first body, which is not directly connected to any body of any other of the multiple FETs, and a second end FET having a second body, which is not directly connected to any body of any other of the multiple FETs. The multiple FETs may include inner FETs that incorporate merged source-drains to save space. By keeping the bodies electrically separated from one another, the full benefits of body-contacting may be realized. However, by incorporating multiple FETs within a single lateral isolation band further saves space.

Abstract translation: 本发明涉及一种堆叠体接触场效应晶体管（FET），其包括串联耦合的多个体接触FET和环绕多个FET的外围的横向隔离带。 多个FET包括具有第一主体的第一端FET，其不直接连接到多个FET中的任何其他FET的任何主体，以及具有第二主体的第二端FET，其不直接连接到任何其它的任何主体 的多个FET。 多个FET可以包括并入合并的源极 - 漏极以节省空间的内部FET。 通过将身体彼此电隔离，可以实现身体接触的全部益处。 然而，通过在单个横向隔离带内并入多个FET，进一步节省空间。