公开(公告)号：US07064565B1

公开(公告)日：2006-06-20

申请号：US10699352

申请日：2003-10-31

申请人： Zhiwei Xu ,  Thomas G. Miller ,  Jianou Shi ,  Gregory S. Horner

发明人： Zhiwei Xu ,  Thomas G. Miller ,  Jianou Shi ,  Gregory S. Horner

IPC分类号： G01R31/302 ,  G01R31/26

CPC分类号： G01R31/129 ,  G01R31/2831

摘要： Methods for determining a surface voltage of an insulating film are provided. One method includes depositing a charge on an upper surface of the insulating film and measuring a current to the wafer during deposition. The method also includes determining the surface voltage of the insulating film from the current. In this manner, the surface voltage is not measured, but is determined from a measured current. Another embodiment may include measuring a second current to the wafer during a high current mode deposition of a charge on the film and determining a second surface voltage of the film from the second current. This method may be repeated until a Q-V sweep is measured. An additional embodiment may include altering a control voltage during deposition of the charge such that a current to the wafer is substantially constant over time and determining charge vs. voltage data for the insulating film.

摘要翻译： 提供了确定绝缘膜的表面电压的方法。 一种方法包括在绝缘膜的上表面上沉积电荷并在沉积期间测量到晶片的电流。 该方法还包括从电流确定绝缘膜的表面电压。 以这种方式，不测量表面电压，而是根据测量的电流确定。 另一个实施例可以包括在电荷的高电流模式沉积期间测量到晶片的第二电流，并从第二电流确定膜的第二表面电压。 可以重复该方法直到测量Q-V扫描。 附加实施例可以包括在沉积电荷期间改变控制电压，使得到晶片的电流随时间基本上是恒定的，并且确定绝缘膜的电荷对电压数据。

公开(公告)号：US08299416B2

公开(公告)日：2012-10-30

申请号：US12660688

申请日：2010-03-01

申请人： Mark A. Arbore ,  David L Klein ,  Leonid A. Vasilyev ,  John M. Schmidt ,  James E. Hudson ,  Gregory S. Horner

发明人： Mark A. Arbore ,  David L Klein ,  Leonid A. Vasilyev ,  John M. Schmidt ,  James E. Hudson ,  Gregory S. Horner

IPC分类号： G01N21/64 ,  G01J1/58

CPC分类号： G01N21/55 ,  G01N21/59 ,  G01N2021/556 ,  G01N2201/0627 ,  G01N2201/0691 ,  H02S50/10

摘要： The present invention provides a high-speed Quantum Efficiency (QE) measurement device that includes at least one device under test (DUT), at least one conditioned light source with a less than 50 nm bandwidth, where a portion of the conditioned light source is monitored. Delivery optics are provided to direct the conditioned light to the DUT, a controller drives the conditioned light source in a time dependent operation, and at least one reflectance measurement assembly receives a portion of the conditioned light reflected from the DUT. A time-resolved measurement device includes a current measurement device and/or a voltage measurement device disposed to resolve a current and/or voltage generated in the DUT by each conditioned light source, where a sufficiently programmed computer determines and outputs a QE value for each DUT according to an incident intensity of at least one wavelength of from the conditioned light source and the time-resolved measurement.

摘要翻译： 本发明提供了一种高速量子效率（QE）测量装置，其包括至少一个被测器件（DUT），至少一个具有小于50nm带宽的调节光源，其中调节光源的一部分是 监控。 提供输送光学器件以将经调节的光引导到DUT，控制器以时间相关的操作来驱动调节光源，并且至少一个反射测量组件接收从DUT反射的经调节的光的一部分。 时间分辨的测量装置包括电流测量装置和/或电压测量装置，其被设置为通过每个调节光源来分辨在DUT中产生的电流和/或电压，其中充分编程的计算机确定并输出每个 DUT根据来自调节光源的至少一个波长的入射强度和时间分辨测量。

公开(公告)号：US08278937B2

公开(公告)日：2012-10-02

申请号：US12658489

申请日：2010-02-08

申请人： Leonid A. Vasilyev ,  John M. Schmidt ,  James E. Hudson ,  Gregory S. Horner

发明人： Leonid A. Vasilyev ,  John M. Schmidt ,  James E. Hudson ,  Gregory S. Horner

IPC分类号： G01R31/02

CPC分类号： G01R31/2656 ,  G01N21/66 ,  H02S50/10

摘要： The current invention provides a shunt defect detection device that includes a device under test (DUT) that is fixedly held by a thermally isolating mount, a power source disposed to provide a directional bias condition to the DUT, a probe disposed to provide a localized power to the DUT from the power source, an emission detector disposed to measure a temporal emission from the DUT when in the directional bias condition, where the measured temporal emission is output as temporal data from the emission detector to a suitably programmed computer that uses the temporal data to determine a heating rate of the DUT and is disposed to estimate an overheat risk level of the DUT, where an output from the computer designates the DUT a pass status, an uncertain status, a fail status or a process to bin status according to the overheat risk level.

摘要翻译： 本发明提供了一种并联缺陷检测装置，其包括由热隔离安装座固定地保持的被测器件（DUT），被设置为向DUT提供定向偏置状态的电源，设置成提供局部电源的探针 从发射检测器输出到来自电源的DUT，发射检测器被设置成在定向偏置条件下测量来自DUT的时间发射，其中测量的时间发射作为时间数据从发射检测器输出到使用时间的适当编程的计算机 数据以确定DUT的加热速率，并且被设置为估计DUT的过热风险水平，其中来自计算机的输出指定DUT通过状态，不确定状态，故障状态或根据 过热风险等级。

公开(公告)号：US20100219327A1

公开(公告)日：2010-09-02

申请号：US12660688

申请日：2010-03-01

申请人： Mark A. Arbore ,  David L. Klein ,  Leonid A. Vasilyev ,  John M. Schmidt ,  James E. Hudson ,  Gregory S. Horner

发明人： Mark A. Arbore ,  David L. Klein ,  Leonid A. Vasilyev ,  John M. Schmidt ,  James E. Hudson ,  Gregory S. Horner

IPC分类号： G01J1/44 ,  G01N21/55

CPC分类号： G01N21/55 ,  G01N21/59 ,  G01N2021/556 ,  G01N2201/0627 ,  G01N2201/0691 ,  H02S50/10

摘要： The present invention provides a high-speed Quantum Efficiency (QE) measurement device that includes at least one device under test (DUT), at least one conditioned light source with a less than 50 nm bandwidth, where a portion of the conditioned light source is monitored. Delivery optics are provided to direct the conditioned light to the DUT, a controller drives the conditioned light source in a time dependent operation, and at least one reflectance measurement assembly receives a portion of the conditioned light reflected from the DUT. A time-resolved measurement device includes a current measurement device and/or a voltage measurement device disposed to resolve a current and/or voltage generated in the DUT by each conditioned light source, where a sufficiently programmed computer determines and outputs a QE value for each DUT according to an incident intensity of at least one wavelength of from the conditioned light source and the time-resolved measurement.

摘要翻译： 本发明提供了一种高速量子效率（QE）测量装置，其包括至少一个被测器件（DUT），至少一个具有小于50nm带宽的调节光源，其中调节光源的一部分是 监控。 提供输送光学器件以将经调节的光引导到DUT，控制器以时间相关的操作来驱动调节光源，并且至少一个反射测量组件接收从DUT反射的经调节的光的一部分。 时间分辨的测量装置包括电流测量装置和/或电压测量装置，其被设置为通过每个调节光源来分辨在DUT中产生的电流和/或电压，其中充分编程的计算机确定并输出每个 DUT根据来自调节光源的至少一个波长的入射强度和时间分辨测量。

公开(公告)号：US20100201374A1

公开(公告)日：2010-08-12

申请号：US12658489

申请日：2010-02-08

申请人： Leonid A. Vasilyev ,  John M. Schmidt ,  James E. Hudson ,  Gregory S. Horner

发明人： Leonid A. Vasilyev ,  John M. Schmidt ,  James E. Hudson ,  Gregory S. Horner

IPC分类号： G01R31/04

CPC分类号： G01R31/2656 ,  G01N21/66 ,  H02S50/10

摘要： The current invention provides a shunt defect detection device that includes a device under test (DUT) that is fixedly held by a thermally isolating mount, a power source disposed to provide a directional bias condition to the DUT, a probe disposed to provide a localized power to the DUT from the power source, an emission detector disposed to measure a temporal emission from the DUT when in the directional bias condition, where the measured temporal emission is output as temporal data from the emission detector to a suitably programmed computer that uses the temporal data to determine a heating rate of the DUT and is disposed to estimate an overheat risk level of the DUT, where an output from the computer designates the DUT a pass status, an uncertain status, a fail status or a process to bin status according to the overheat risk level.

摘要翻译： 本发明提供了一种并联缺陷检测装置，其包括由热隔离安装座固定地保持的被测器件（DUT），被设置为向DUT提供定向偏置状态的电源，设置成提供局部电源的探针 从发射检测器输出到来自电源的DUT，发射检测器被设置成在定向偏置条件下测量来自DUT的时间发射，其中测量的时间发射作为时间数据从发射检测器输出到使用时间的适当编程的计算机 数据以确定DUT的加热速率，并且被设置为估计DUT的过热风险水平，其中来自计算机的输出指定DUT通过状态，不确定状态，故障状态或根据 过热风险等级。