公开(公告)号：US20190157406A1

公开(公告)日：2019-05-23

申请号：US16014496

申请日：2018-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Inchan HWANG ,  Heonjong SHIN ,  Sunghun JUNG ,  Doohyun LEE ,  Hwichan JUN ,  Hakyoon AHN

IPC: H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L27/092 ,  H01L21/285 ,  H01L29/06 ,  H01L29/66

Abstract: A semiconductor device is disclosed. The semiconductor device may include a substrate including a first active pattern, the first active pattern vertically protruding from a top surface of the substrate, a first source/drain pattern filling a first recess, which is formed in an upper portion of the first active pattern, a first metal silicide layer on the first source/drain pattern, the first metal silicide layer including a first portion and a second portion, which are located on a first surface of the first source/drain pattern, and a first contact in contact with the second portion of the first metal silicide layer. A thickness of the first portion may be different from a thickness of the second portion.