公开(公告)号：US20220005759A1

公开(公告)日：2022-01-06

申请号：US17209871

申请日：2021-03-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungmin LEE ,  Junhyoung KIM

IPC: H01L23/522 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11582 ,  H01L27/11573 ,  H01L27/11526

Abstract: A three-dimensional semiconductor memory device includes: a peripheral circuit structure; and a cell array structure on the peripheral circuit structure. The peripheral circuit structure includes a lower wiring on a substrate, a stopping insulating layer on the lower wiring, a contact via on the lower wiring, a floating via on the stopping insulating layer, and an upper wiring on the contact via. The floating via does not contact the lower wiring. The contact via contacts the lower wiring through a via hole in the stopping insulating layer. The upper wiring contacts the contact via.

公开(公告)号：US20210391289A1

公开(公告)日：2021-12-16

申请号：US17172276

申请日：2021-02-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhyoung KIM ,  Taemok GWON ,  Seungmin LEE

IPC: H01L23/00 ,  H01L25/065 ,  H01L25/18 ,  H01L23/522 ,  H01L27/11556 ,  H01L27/11582 ,  H01L25/00

Abstract: A semiconductor device includes first gate electrodes, a first channel structure penetrating the first gate electrodes and including a first channel layer and a first channel filling insulating layer, second gate electrodes above the first gate electrodes, a second channel structure penetrating the second gate electrodes and including a second channel layer and a second channel filling insulating layer, and a central wiring layer between the first gate electrodes and the second gate electrodes and connected to the first channel layer and the second channel layer, wherein the first channel layer and the second channel layer are connected to each other in a region surrounded by the central wiring layer, and the first channel filling insulating layer and the second channel filling insulating layer are connected to each other in a region surrounded by the central wiring layer.

公开(公告)号：US20160254681A1

公开(公告)日：2016-09-01

申请号：US15056296

申请日：2016-02-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngjun CHOI ,  Seungmin LEE ,  Heon Chol KIM ,  Ikhyun CHO

IPC: H02J7/00

Abstract: A power control method and an electronic device and/or connecting unit to implement the power control method is provided. The electronic device includes a first interface unit configured to be connected to an external device that can receive and provide power to the electronic device, a second interface unit configured to be connected to an external charger that can provide power for the external device and the electronic device, and a main controller configured to detect whether or not the external charger is connected, and receive and direct power from the external device or the external charger according to whether or not the external charger is connected.

Abstract translation: 提供了一种功率控制方法和用于实现功率控制方法的电子设备和/或连接单元。 电子设备包括：第一接口单元，被配置为连接到可以接收并向电子设备供电的外部设备;第二接口单元，被配置为连接到外部充电器，该外部充电器可以为外部设备和电子设备提供电力 装置和主控制器，被配置为检测外部充电器是否连接，并且根据外部充电器是否连接，从外部设备或外部充电器接收和引导电力。