公开(公告)号：US11094376B2

公开(公告)日：2021-08-17

申请号：US16882024

申请日：2020-05-22

Applicant: STMICROELECTRONICS INTERNATIONAL N.V.

Inventor： Anuj Grover ,  Tanmoy Roy ,  Nitin Chawla

IPC: G11C11/41 ,  G11C11/419 ,  H01L27/11

Abstract: An in-memory compute (IMC) device includes a compute array having a first plurality of cells. The compute array is arranged as a plurality of rows of cells intersecting a plurality of columns of cells. Each cell of the first plurality of cells is identifiable by its corresponding row and column. The IMC device also includes a plurality of computation engines and a plurality of bias engines. Each computation engine is respectively formed in a different one of a second plurality of cells, wherein the second plurality of cells is formed from cells of the first plurality. Each computation engine is formed at a respective row and column intersection. Each bias engine of the plurality of bias engines is arranged to computationally combine an output from at least one of the plurality of computation engines with a respective bias value.

公开(公告)号：US09305633B2

公开(公告)日：2016-04-05

申请号：US14283120

申请日：2014-05-20

Applicant: STMicroelectronics International N.V.

Inventor： Anuj Grover ,  Gangaikondan Subramani Visweswaran

IPC: G11C11/00 ,  G11C11/412 ,  G11C5/02 ,  G11C11/415 ,  G11C11/413 ,  G11C11/419 ,  G11C11/416 ,  G11C11/411

CPC classification number: G11C11/412 ,  G11C5/02 ,  G11C8/16 ,  G11C11/4116 ,  G11C11/413 ,  G11C11/415 ,  G11C11/416 ,  G11C11/419 ,  H01L27/0207 ,  H01L27/1104

Abstract: Embodiments include an array of SRAM cells, an SRAM cell, and methods of forming the same. An embodiment is an array of static random access memory (SRAM) cells including a plurality of overlapping rectangular regions. Each of overlapping rectangular regions including an entire first SRAM cell, a portion of a second adjacent SRAM cell in a first corner region of the rectangular region, and a portion of a third adjacent SRAM cell in a second corner region of the rectangular region, the second corner region being opposite the first corner region. Embodiments also include multi-finger cell layouts.

Abstract translation: 实施例包括SRAM单元阵列，SRAM单元及其形成方法。 一个实施例是包括多个重叠矩形区域的静态随机存取存储器（SRAM）单元阵列。 每个重叠矩形区域包括整个第一SRAM单元，矩形区域的第一角区域中的第二相邻SRAM单元的一部分和矩形区域的第二角区域中的第三相邻SRAM单元的一部分， 第二角区域与第一角区域相对。 实施例还包括多指细胞布局。

公开(公告)号：US20150302917A1

公开(公告)日：2015-10-22

申请号：US14283120

申请日：2014-05-20

Applicant: STMICROELECTRONICS INTERNATIONAL N.V.

Inventor： Anuj Grover ,  Gangaikondan Subramani Visweswaran

IPC: G11C11/412 ,  G11C5/02

CPC classification number: G11C11/412 ,  G11C5/02 ,  G11C8/16 ,  G11C11/4116 ,  G11C11/413 ,  G11C11/415 ,  G11C11/416 ,  G11C11/419 ,  H01L27/0207 ,  H01L27/1104

Abstract: Embodiments of the present disclosure include an array of SRAM cells, an SRAM cell, and methods of forming the same. An embodiment is an array of static random access memory (SRAM) cells including a plurality of overlapping rectangular regions. Each of overlapping rectangular regions including an entire first SRAM cell, a portion of a second adjacent SRAM cell in a first corner region of the rectangular region, and a portion of a third adjacent SRAM cell in a second corner region of the rectangular region, the second corner region being opposite the first corner region. Embodiments also include multi-finger cell layouts.

Abstract translation: 本公开的实施例包括SRAM单元的阵列，SRAM单元及其形成方法。 一个实施例是包括多个重叠矩形区域的静态随机存取存储器（SRAM）单元阵列。 每个重叠矩形区域包括整个第一SRAM单元，矩形区域的第一角区域中的第二相邻SRAM单元的一部分和矩形区域的第二角区域中的第三相邻SRAM单元的一部分， 第二角区域与第一角区域相对。 实施例还包括多指细胞布局。