公开(公告)号：US11581389B2

公开(公告)日：2023-02-14

申请号：US17100915

申请日：2020-11-22

Applicant: Samsung Display Co., Ltd.

Inventor： Somi Jung ,  Byunghoon Kim ,  Junghyun Kim ,  Junehyoung Park ,  Hyunji Lee

IPC: H01L27/32 ,  G09G3/3275 ,  H01L51/52 ,  H05K1/18

Abstract: A display device includes: a first substrate including a display area and a non-display area at least partially surrounding the display area; a second substrate disposed on the first substrate; a pixel layer disposed on the display area between the first substrate and the second substrate; a seal disposed on the non-display area between the first substrate and the second substrate; a pad connected to the pixel layer and disposed on the non-display area; and a dummy element in a hole in the seal, the dummy element being disposed on the pad.

公开(公告)号：US20210265447A1

公开(公告)日：2021-08-26

申请号：US17100915

申请日：2020-11-22

Applicant: Samsung Display Co., Ltd.

Inventor： Somi Jung ,  Byunghoon Kim ,  Junghyun Kim ,  Junehyoung Park ,  Hyunji Lee

IPC: H01L27/32 ,  H01L51/52 ,  H05K1/18 ,  G09G3/3275

Abstract: A display device includes: a first substrate including a display area and a non-display area at least partially surrounding the display area; a second substrate disposed on the first substrate; a pixel layer disposed on the display area between the first substrate and the second substrate; a seal disposed on the non-display area between the first substrate and the second substrate; a pad connected to the pixel layer and disposed on the non-display area; and a dummy element in a hole in the seal, the dummy element being disposed on the pad.

公开(公告)号：US09793415B2

公开(公告)日：2017-10-17

申请号：US15065281

申请日：2016-03-09

Applicant: Samsung Display Co., Ltd.

Inventor： Junghyun Kim ,  Kiwan Ahn

IPC: H01L33/00 ,  H01L21/00 ,  H01L29/786 ,  H01L29/66 ,  H01L29/417 ,  H01L29/423 ,  H01L21/265

CPC classification number: H01L29/78696 ,  H01L21/26506 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/7866 ,  H01L29/78675

Abstract: A semiconductor device and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a semiconductor layer, a gate electrode on the semiconductor layer, a first insulating layer between the semiconductor layer and the gate electrode; a second insulating layer on the gate electrode, source and drain electrodes corresponding to both ends of the semiconductor layer and disposed on the second insulating layer, and a doping layer disposed along contact holes of the first and second insulating layers, which expose the both ends of the semiconductor layer, such as, between the both ends of the semiconductor layer and the source and drain electrodes.