ORGANIC LIGHT-EMITTING DIODE DISPLAY
    21.
    发明申请
    ORGANIC LIGHT-EMITTING DIODE DISPLAY 有权
    有机发光二极管显示

    公开(公告)号:US20160254340A1

    公开(公告)日:2016-09-01

    申请号:US14869591

    申请日:2015-09-29

    Abstract: An organic light-emitting diode (OLED) display is disclosed. In one aspect, the display includes a substrate and an active pattern formed over the substrate and including first to fourth regions. A gate insulation layer is formed over the active pattern and the substrate, and a first gate electrode is formed over the gate insulation layer and partially overlapping the active pattern. The first gate electrode, the first region and the second region define a first transistor. A second gate electrode is formed on the same layer as the first gate electrode. The second gate electrode, the third region and the fourth region define a second transistor, and the second gate electrode, the second region and the fourth region define a third transistor. A first insulating interlayer is formed over the first gate electrode, the second gate electrode, and the gate insulation layer.

    Abstract translation: 公开了一种有机发光二极管(OLED)显示器。 在一个方面,显示器包括衬底和形成在衬底上并包括第一至第四区域的有源图案。 栅极绝缘层形成在有源图案和衬底之上,并且第一栅电极形成在栅极绝缘层之上并且部分地与有源图案重叠。 第一栅极电极,第一区域和第二区域限定第一晶体管。 第二栅电极形成在与第一栅电极相同的层上。 第二栅极电极,第三区域和第四区域限定第二晶体管,第二栅电极,第二区域和第四区域限定第三晶体管。 在第一栅电极,第二栅电极和栅绝缘层上形成第一绝缘中间层。

    ORGANIC LIGHT-EMITTING DIODE DISPLAY
    24.
    发明公开

    公开(公告)号:US20240341146A1

    公开(公告)日:2024-10-10

    申请号:US18750434

    申请日:2024-06-21

    Abstract: An organic light-emitting diode (OLED) display is disclosed. In one aspect, the display includes a substrate and an active pattern formed over the substrate and including first to fourth regions. A gate insulation layer is formed over the active pattern and the substrate, and a first gate electrode is formed over the gate insulation layer and partially overlapping the active pattern. The first gate electrode, the first region and the second region define a first transistor. A second gate electrode is formed on the same layer as the first gate electrode. The second gate electrode, the third region and the fourth region define a second transistor, and the second gate electrode, the second region and the fourth region define a third transistor. A first insulating interlayer is formed over the first gate electrode, the second gate electrode, and the gate insulation layer.

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